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Researcher profile

J. Barzola-Quiquia

J. Barzola-Quiquia contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-con

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Published work

22 published item(s)

preprint2015arXiv

Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes

The magnetotransport properties were studied in hundreds of micrometer length double-wall carbon nanotubes (DWCNT) bundles. Above 15 K the resistance shows an ohmic behavior and its temperature dependence is well described using the variable-range hopping for one-dimensional system. The magnetoresistance is negative and can be explained using an empirical model based on spin-scattering processes indicating the existence of magnetic order up to room temperature. At temperatures between 2 K and 15 K the resistance is non-ohmic and the current-voltage characteristics reveal the appearance of a potential, which can be well described by a fluctuation-induced tunneling conduction model. In this low temperature range and at low enough input current, a positive magnetoresistance appears - in addition to the negative one - with an extraordinary hysteresis in field and vanishes at $T \sim 15 $K, suggesting the existence of a superconducting state. Magnetization results partially support the existence of both phenomena in the DWCNT bundles.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi$_2$Se$_3$ crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures $T \lesssim 50$ K and fields $B \lesssim 1$ T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

On the low-field Hall coefficient of graphite

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Possible superconductivity in multi-layer-graphene by application of a gate voltage

The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage ($V_g$) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density ($n$) in the sample near surface region and under different values of $V_g$ at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at $T \lesssim 17$ K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Can doping graphite trigger room temperature superconductivity? Evidence for granular high-temperature superconductivity in water-treated graphite powder

Trying to dope graphite flakes we found that the magnetization of pure, several tens of micrometers grain size graphite powder and after a simple treatment with pure water shows clear and reproducible granular superconducting behavior with a critical temperature above 300K. The observed magnetic characteristics as a function of temperature, magnetic field and time, provide evidence for weakly coupled grains through Josephson interaction, revealing the existence of superconducting vortices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $μ$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40 $meV.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence of Josephson-coupled superconducting regions at the interfaces of Highly Oriented Pyrolytic Graphite

Transport properties of a few hundreds of nanometers thick (in the graphene plane direction) lamellae of highly oriented pyrolytic graphite (HOPG) have been investigated. Current-Voltage characteristics as well as the temperature dependence of the voltage at different fixed input currents provide evidence for Josephson-coupled superconducting regions embedded in the internal two-dimensional interfaces, reaching zero resistance at low enough temperatures. The overall behavior indicates the existence of superconducting regions with critical temperatures above 100 K at the internal interfaces of oriented pyrolytic graphite.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Large local Hall effect in pin-hole dominated multigraphene spin-valves

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel barrier. Local Hall effect appears due to large local magnetostatic field produced at the roughness in the AlO$_x$ tunnel barrier. The effect of this local Hall effect is found to reduce as temperature is increased above 75 K. The strong local Hall effect hinders spin-injection into multigraphene resulting in no spin signal in non-local measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Length dependence of the resistance in graphite: Influence of ballistic transport

Using a linear array of voltage electrodes with a separation of several micrometers on a $20 $nm thick and 30 $μ$m long multigraphene sample we show that the measured resistance does not follow the usual length dependence according to Ohm&#39;s law. The deviations can be quantitatively explained taking into account Sharvin-Knudsen formula for ballistic transport. This allows us to obtain without free parameters the mean free path of the carriers in the sample at different temperatures. In agreement with recently reported values obtained with a different experimental method, we obtain that the carrier mean free path is of the order of $\sim 2 μ$m with a mobility $μ\sim 10^7 $cm$^{2}$V$^{-1}$s$^{-1}$. The results indicate that the usual Ohm&#39;s law is not adequate to calculate the absolute resistivity of mesoscopic graphite samples.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer

We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field $H_{E}(T)$ as well as the magnetization shift $M_E(T)$, vanish around the Néel temperature $T_N \simeq 45$ K. We show that the magnetization shift $M_E(T)$ is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having those a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO$_3$ film is highly insulating, our results demonstrate that the $M_E(T)$ shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO$_3$ layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhancement of the ferromagnetic order of graphite after sulphuric acid treatment

We have studied the changes in the ferromagnetic behavior of graphite powder and graphite flakes after treatment with diluted sulphuric acid. We show that this kind of acid treatment enhances substantially the ferromagnetic magnetization of virgin graphite micrometer size powder as well as in graphite flakes. The anisotropic magnetoresistance (AMR) amplitude at 300 K measured in a micrometer size thin graphite flake after acid treatment reaches values comparable to polycrystalline cobalt.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental Study of the Intrinsic and Extrinsic Transport Properties of Graphite and Multigraphene Samples

This work deals with the intrinsic and extrinsic properties of the graphene layers inside the graphite structure, in particular the influence of defects and interfaces. We discuss the evidence for ballistic transport found in mesoscopic graphite samples and the possibility to obtain the intrinsic carrier density of graphite, without the need of free parameters or arbitrary assumptions. The influence of internal interfaces on the transport properties of bulk graphite is described in detail. We show that in specially prepared multigraphene samples the transport properties show clear signs for the existence of granular superconductivity within the graphite interfaces. We argue that the superconducting-insulator or metal-insulator transition (MIT) reported in the literature for bulk graphite is not intrinsic of the graphite structure but it is due to the influence of these interfaces. Current-Voltage characteristics curves reveal Josephson-like behavior at the interfaces with superconducting critical temperatures above 150K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ballistic transport at room temperature in micrometer size multigraphene

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research was done in rather bulk samples where lattice defects hide their intrinsic values. By measuring the electrical resistance through microfabricated constrictions in micrometer small graphite flakes of a few tens of nanometers thickness we studied the ballistic behavior of the carriers. We found that the carriers&#39; mean free path is micrometer large with a mobility $μ\simeq 6 \times 10^6 $cm$^2$/Vs and a carrier density $n \simeq 7 \times 10^8 $cm$^{-2}$ per graphene layer at room temperature. These distinctive transport and ballistic properties have important implications for understanding the values obtained in single graphene and in graphite as well as for implementing this last in nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The influence of Ga$^+$-irradiation on the transport properties of mesoscopic conducting thin films

We studied the influence of 30keV Ga$^+$-ions -- commonly used in focused ion beam (FIB) devices -- on the transport properties of thin crystalline graphite flake, La$_{0.7}$Ca$_{0.3}$MnO$_3$ and Co thin films. The changes of the electrical resistance were measured in-situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga$^+$ fluences much below those used for patterning and ion beam induced deposition (IBID), limiting seriously the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Uncompensated magnetization and exchange-bias field in La$_{0.7}$Sr$_{0.3}$MnO$_3$/YMnO$_3$ bilayers: The influence of the ferromagnetic layer

We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO$_3$ (375~nm thick) and ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ and La$_{0.67}$Ca$_{0.33}$MnO$_3$ ($8 \ldots 225~$nm), in particular the vertical magnetization shift $M_E$ and exchange bias field $H_E$ for different thickness and magnetic dilution of the ferromagnetic layer at different temperatures and cooling fields. We have found very large $M_E$ shifts equivalent to up to 100\% of the saturation value of the o-YMO layer alone. The overall behavior indicates that the properties of the ferromagnetic layer contribute substantially to the $M_E$ shift and that this does not correlate straightforwardly with the measured exchange bias field $H_E$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

ZnO:Co Diluted Magnetic Semiconductor or Hybrid Nanostructure for Spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Changes in the electrical transport of ZnO under visible light

Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure to or covering them from visible light. At fixed times Cole-Cole-diagrams indicate the presence of a single relaxation process. A simple analysis of the impedance data allows us to obtain two main relaxation times. The behavior for both, ZnO crystal and thin film, is similar but the thin film shows shorter relaxation times. The analysis indicates the existence of two different photo-active defects with activation energies between ~0.8 eV and ~1.1 eV.

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preprint2009arXiv

Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy

The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetic order in Graphite: Experimental evidence, intrinsic and extrinsic difficulties

We discuss recently obtained data using different experimental methods including magnetoresistance measurements that indicate the existence of metal-free high-temperature magnetic order in graphite. Intrinsic as well as extrinsic difficulties to trigger magnetic order by irradiation of graphite are discussed in view of recently published theoretical work.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples

In this work we investigated correlations between the internal microstructure and sample size (lateral as well as thickness) of mesoscopic, tens of nanometer thick graphite (multigraphene) samples and the temperature $(T)$ and field $(B)$ dependence of their electrical resistivity $ρ(T,B)$. Low energy transmission electron microscopy reveals that the original highly oriented pyrolytic graphite material -- from which the multigraphene samples were obtained by exfoliation -- is composed of a stack of $\sim 50 $nm thick and micrometer long crystalline regions separated by interfaces running parallel to the graphene planes. We found a qualitative and quantitative change in the behavior of $ρ(T,B)$ upon thickness of the multigraphene samples, indicating that their internal microstructure is important.} {The overall results indicate that the metallic-like behavior of $ρ(T)$ at zero field measured for bulk graphite samples is not intrinsic of ideal graphite. The results suggest that the interfaces between crystalline regions may be responsible for the superconducting-like properties observed in graphite. Our transport measurements also show that reducing the sample lateral size as well as the length between voltage electrodes decreases the magnetoresistance, in agreement with recently published results. The magnetoresistance of the multigraphene samples shows a scaling of the form ($(R(B) - R(0))/R(0))/T^α= f(B/T)$ with a sample dependent exponent $α\sim 1$, which applies in the whole temperature 2 K $\le T \le 270$K and magnetic field range $B \le 8 $T.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Size Effects in the Magnetoresistance of Graphite: Absence of Magnetoresistance in Micrometer size Samples

We present a study of the magnetoresistance of highly oriented pyrolytic graphite (HOPG) as a function of the sample size. Our results show unequivocally that the magnetoresistance reduces with the sample size even for samples of hundreds of micrometers size. This sample size effect is due the large mean free path and Fermi wavelength of carriers in graphite and may explain the observed practically absence of magnetoresistance in micrometer confined small graphene samples where quantum effects should be at hand. These were not taken into account in the literature yet and ask for a revision of experimental and theoretical work on graphite.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Proton-induced magnetic order in carbon: SQUID measurements

In this work we have studied systematically the changes in the magnetic behavior of highly oriented pyrolytic graphite (HOPG) samples after proton irradiation in the MeV energy range. Superconducting quantum interferometer device (SQUID) results obtained from samples with thousands of localized spots of micrometer size as well on samples irradiated with a broad beam confirm previously reported results. Both, the para- and ferromagnetic contributions depend strongly on the irradiation details. The results indicate that the magnetic moment at saturation of spots of micrometer size is of the order of $10^{-10}$ emu.

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