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Rodolphe Boudot

Rodolphe Boudot contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Laser-actuated hermetic seals for integrated atomic devices

Atomic devices such as atomic clocks and optically-pumped magnetometers rely on the interrogation of atoms contained in a cell whose inner content has to meet high standards of purity and accuracy. Glass-blowing techniques and craftsmanship have evolved over many decades to achieve such standards in macroscopic vapor cells. With the emergence of chip-scale atomic devices, the need for miniaturization and mass fabrication has led to the adoption of microfabrication techniques to make millimeter-scale vapor cells. However, many shortcomings remain and no process has been able to match the quality and versatility of glass-blown cells. Here, we introduce a novel approach to structure, fill and seal microfabricated vapor cells inspired from the century-old approach of glass-blowing. In particular we demonstrate opening and closing single-use zero-leak microfabricated valves, actuated exclusively by laser, and operating in the same way as the "make-seals" and "break-seals" found in the filling apparatus of traditional cells. Such structures are employed to fill cesium vapor cells at the wafer-level. The make-seal structure consists of a glass membrane that can be locally heated and deflected to seal a microchannel. The break-seal is obtained by breaching a silicon wall between cavities. This new approach allows adapting processes previously restricted to glass-blown cells. It can also be extended to vacuum microelectronics and vacuum-packaging of micro-electro-mechanical systems (MEMS) devices.

preprint2020arXiv

Enhanced observation time of magneto-optical traps using micro-machined non-evaporable getter pumps

We show that micro-machined non-evaporable getter pumps (NEGs) can extend the time over which laser cooled atoms canbe produced in a magneto-optical trap (MOT), in the absence of other vacuum pumping mechanisms. In a first study, weincorporate a silicon-glass microfabricated ultra-high vacuum (UHV) cell with silicon etched NEG cavities and alumino-silicateglass (ASG) windows and demonstrate the observation of a repeatedly-loading MOT over a 10 minute period with a single laser-activated NEG. In a second study, the capacity of passive pumping with laser activated NEG materials is further investigated ina borosilicate glass-blown cuvette cell containing five NEG tablets. In this cell, the MOT remained visible for over 4 days withoutany external active pumping system. This MOT observation time exceeds the one obtained in the no-NEG scenario by almostfive orders of magnitude. The cell scalability and potential vacuum longevity made possible with NEG materials may enable inthe future the development of miniaturized cold-atom instruments.

preprint2015arXiv

Characterization of Cs vapor cell coated with octadecyltrichlorosilane using coherent population trapping spectroscopy

We report the realization and characterization using coherent population trapping (CPT) spectroscopy of an octadecyltrichlorosilane (OTS)-coated centimeter-scale Cs vapor cell. The dual-structure of the resonance lineshape, with presence of a narrow structure line at the top of a Doppler-broadened structure, is clearly observed. The linewidth of the narrow resonance is compared to the linewidth of an evacuated Cs cell and of a buffer gas Cs cell of similar size. The Cs-OTS adsorption energy is measured to be (0.42 $\pm$ 0.03) eV, leading to a clock frequency shift rate of $2.7\times10^{-9}/$K in fractional unit. A hyperfine population lifetime, $T_1$, and a microwave coherence lifetime, $T_2$, of 1.6 and 0.5 ms are reported, corresponding to about 37 and 12 useful bounces, respectively. Atomic-motion induced Ramsey narrowing of dark resonances is observed in Cs-OTS cells by reducing the optical beam diameter. Ramsey CPT fringes are detected using a pulsed CPT interrogation scheme. Potential applications of the Cs-OTS cell to the development of a vapor cell atomic clock are discussed.

preprint2012arXiv

Phase Noise in RF and Microwave Amplifiers

Understanding the amplifier phase noise is a critical issue in numerous fields of engineering and physics, like oscillators, frequency synthesis, telecommunications, radars, spectroscopy, in the emerging domain of microwave photonics, and in more exotic domains like radio astronomy, particle accelerators, etc. This article analyzes the two main types of phase noise in amplifiers, white and flicker. White phase noise results from adding white noise to the RF spectrum around the carrier. For a given amount of RF noise added, noise is proportional to the inverse of the carrier power. By contrast, the 1/f coefficient is a constant parameter of the amplifier, in a wide range of carrier power. This fact has amazing consequences on different amplifier topologies. Connecting m equal amplifiers in parallel, flicker is 1/m times that of one device. Cascading m equal amplifiers, flicker is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in dB) due to positive feedback (regeneration), which for integer m is similar to the case of m amplifiers, we find that flicker is m^2 times that of the amplifier alone. Starting from the fact that near-dc flicker exists in all electronic devices, although generally not accessible from outside, the simplest model for the 1/f phase noise is that the near-dc 1/f noise phase-modulates the carrier through some parametric effect in the semiconductor. This model predicts the behavior of the (simple) amplifier and of the different amplifier topologies. Numerous measurements on amplifiers from different technologies and frequencies (HF to microwaves), also including some obsolete amplifiers, validate the theory.