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Richard Beanland

Richard Beanland appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-halleess.IVMachine LearningApplicationsComputer Visionphysics.comp-phphysics.data-an

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Published work

13 published item(s)

preprint2022arXiv

Modelling fine-sliced three dimensional electron diffraction data with dynamical Bloch-wave simulations

Recent interest in structure solution and refinement using electron diffraction (ED) has been fuelled by its inherent advantages when applied to crystals of sub-micron size, as well as a better sensitivity to light elements. Currently, data is often processed using software written for X-ray diffraction, using the kinematic theory of diffraction to generate model intensities -- despite the inherent differences in diffraction processes in ED. Here, we use dynamical Bloch-wave simulations to model continuous rotation electron diffraction data, collected with a fine angular resolution (crystal orientations of $\sim0.1^\circ$). This fine-sliced data allows us to reexamine the corrections applied to ED data. We propose a new method for optimising crystal orientation, and take into account the angular range of the incident beam and varying slew rate. We extract observed integrated intensities and perform accurate comparisons with simulations using rocking curves for a (110) lamella of silicon 185~nm in thickness. $R_1$ is reduced from $26\%$ with the kinematic model to $6.8\%$ using dynamical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Characterizing oxygen atoms in perovskite and pyrochlore oxides using ADF-STEM at a resolution of a few tens of picometers

We present an aberration corrected scanning transmission electron microscopy (ac-STEM) analysis of the perovskite (LaFeO3) and pyrochlore (Yb2Ti2O7 and Pr2Zr2O7) oxides and demonstrate that both the shape and contrast of visible atomic columns in annular dark-field (ADF) images are sensitive to the presence of nearby atoms of low atomic number (e.g. oxygen). We show that point defects (e.g. oxygen vacancies), which are invisible - or difficult to observe due to limited sensitivity - in X-ray and neutron diffraction measurements, are the origin of the complex magnetic ground state of pyrochlore oxides. In addition, we present, for the first time, a method by which light atoms can be resolved in quantitative ADF-STEM images. Using this method, we resolved oxygen atoms in perovskite and pyrochlore oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exit Wavefunction Reconstruction from Single Transmission Electron Micrographs with Deep Learning

Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions were simulated with clTEM multislice propagation for 12789 materials from the Crystallography Open Database. Our networks can recover 224x224 wavefunctions in ~25 ms for a large range of physical hyperparameters and materials, and we demonstrate that performance improves as the distribution of wavefunctions is restricted. Phase recovery with deep learning overcomes the limitations of traditional methods: it is live, not susceptible to distortions, does not require microscope modification or multiple images, and can be applied to any imaging regime. This paper introduces multiple approaches to CTEM phase recovery with deep learning, and is intended to establish starting points to be improved upon by future research. Source code and links to our new datasets and pre-trained models are available at https://github.com/Jeffrey-Ede/one-shot

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Partial Scanning Transmission Electron Microscopy with Deep Learning

Compressed sensing algorithms are used to decrease electron microscope scan time and electron beam exposure with minimal information loss. Following successful applications of deep learning to compressed sensing, we have developed a two-stage multiscale generative adversarial neural network to complete realistic 512$\times$512 scanning transmission electron micrographs from spiral, jittered gridlike, and other partial scans. For spiral scans and mean squared error based pre-training, this enables electron beam coverage to be decreased by 17.9$\times$ with a 3.8\% test set root mean squared intensity error, and by 87.0$\times$ with a 6.2\% error. Our generator networks are trained on partial scans created from a new dataset of 16227 scanning transmission electron micrographs. High performance is achieved with adaptive learning rate clipping of loss spikes and an auxiliary trainer network. Our source code, new dataset, and pre-trained models have been made publicly available at https://github.com/Jeffrey-Ede/partial-STEM

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Adaptive Learning Rate Clipping Stabilizes Learning

Artificial neural network training with stochastic gradient descent can be destabilized by "bad batches" with high losses. This is often problematic for training with small batch sizes, high order loss functions or unstably high learning rates. To stabilize learning, we have developed adaptive learning rate clipping (ALRC) to limit backpropagated losses to a number of standard deviations above their running means. ALRC is designed to complement existing learning algorithms: Our algorithm is computationally inexpensive, can be applied to any loss function or batch size, is robust to hyperparameter choices and does not affect backpropagated gradient distributions. Experiments with CIFAR-10 supersampling show that ALCR decreases errors for unstable mean quartic error training while stable mean squared error training is unaffected. We also show that ALRC decreases unstable mean squared errors for partial scanning transmission electron micrograph completion. Our source code is publicly available at https://github.com/Jeffrey-Ede/ALRC

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Artefacts in geometric phase analysis of compound materials

The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron microscope (TEM) images. It is also attractive for analysis of aberration-corrected scanning TEM (ac-STEM) images that resolve every atom column, since it uses Fourier transforms and does not require real-space peak detection and assignment to appropriate sublattices. Here it is demonstrated that in ac-STEM images of compound materials (i.e. with more than one atom per unit cell) an additional phase is present in the Fourier transform. If the structure changes from one area to another in the image (e.g. across an interface), the change in this additional phase will appear as a strain in conventional GPA, even if there is no lattice strain. Strategies to avoid this pitfall are outlined.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bayesian Density Estimation via Multiple Sequential Inversions of 2-D Images with Application in Electron Microscopy

We present a new Bayesian methodology to learn the unknown material density of a given sample by inverting its two-dimensional images that are taken with a Scanning Electron Microscope. An image results from a sequence of projections of the convolution of the density function with the unknown microscopy correction function that we also learn from the data. We invoke a novel design of experiment, involving imaging at multiple values of the parameter that controls the sub-surface depth from which information about the density structure is carried, to result in the image. Real-life material density functions are characterised by high density contrasts and typically are highly discontinuous, implying that they exhibit correlation structures that do not vary smoothly. In the absence of training data, modelling such correlation structures of real material density functions is not possible. So we discretise the material sample and treat values of the density function at chosen locations inside it as independent and distribution-free parameters. Resolution of the available image dictates the discretisation length of the model; three models pertaining to distinct resolution classes are developed. We develop priors on the material density, such that these priors adapt to the sparsity inherent in the density function. The likelihood is defined in terms of the distance between the convolution of the unknown functions and the image data. The posterior probability density of the unknowns given the data is expressed using the developed priors on the density and priors on the microscopy correction function as elicitated from the Microscopy literature. We achieve posterior samples using an adaptive Metropolis-within-Gibbs inference scheme. The method is applied to learn the material density of a 3-D sample of a real nano-structure and of simulated alloy samples.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Lateral heterojunctions within monolayer semiconductors

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The structure of planar defects in tilted perovskites

A mathematical framework is developed to describe tilted perovskites using a tensor description of octahedral deformations. The continuity of octahedral tilts through the crystal is described using an operator which relates the deformations of adjacent octahedra; examination of the properties of this operator upon application of symmetry elements allows the space group of tilted perovskites to be obtained. It is shown that the condition of octahedral continuity across a planar defect such as an anti-phase boundary or domain wall necessarily leads to different octahedral tilting at the defect, and a method is given to predict the local tilt system which will occur in any given case. Planar boundaries in the rhombohedral R3c a-a-a- tilt system are considered as an example.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

'Digital' Electron Diffraction - Seeing the Whole Picture

The advantages of convergent beam electron diffraction for symmetry determination at the scale of a few nm are well known. In practice, the approach is often limited due to the restriction on the angular range of the electron beam imposed by the small Bragg angle for high energy electron diffraction, i.e. a large convergence angle of the incident beam results in overlapping information in the diffraction pattern. Techniques have been generally available since the 1980s which overcome this restriction for individual diffracted beams, by making a compromise between illuminated area and beam convergence. Here, we describe a simple technique which overcomes all of these problems using computer control, giving electron diffraction data over a large angular range for many diffracted beams from the volume given by a focused electron beam (typically a few nm or less). The increase in the amount of information significantly improves ease of interpretation and widens the applicability of the technique, particularly for thin materials or those with larger lattice parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

III-V quantum light source and cavity-QED on Silicon

Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Cubic MnSb: epitaxial growth of a predicted room temperature half-metal

Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the spin polarization as a function of reduced magnetization for the half-metals NiMnSb and cubic MnSb. In both cases, half-metallicity is lost at a threshold magnetization reduction, corresponding to a temperature T*< Tc. This threshold is far higher for cubic MnSb compared to NiMnSb and corresponds to T* > 350K, making epitaxial cubic MnSb a promising candidate for room temperature spin injection into semiconductors.

0 citations0 reviewsNo code linkedOpen access