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Researcher profile

Ana M. Sánchez

Ana M. Sánchez contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.optics

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Published work

3 published item(s)

preprint2016arXiv

Thermal tuners on a Silicon Nitride platform

In this paper, the design trade-offs for the implementation of small footprint thermal tuners on silicon nitride are presented, and explored through measurements and supporting simulations of a photonic chip based on Mach-Zehnder Interferometers. Firstly, the electrical properties of the tuners are assessed, showing a compromise between compactness and deterioration. Secondly, the different variables involved in the thermal efficiency, switching power and heater dimensions, are analysed. Finally, with focus on exploring the limits of this compact tuners with regards to on chip component density, the thermal-cross talk is also investigated. Tuners with footprint of 270x5 μm 2 and switching power of 350 mW are reported, with thermal-cross talk, in terms of induced phase change in adjacent devices of less than one order of magnitude at distances over 20 μm. Paths for the improvement of thermal efficiency, power consumption and resilience of the devices are also outlined

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Design rules for dislocation filters

The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.

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preprint2011arXiv

Cubic MnSb: epitaxial growth of a predicted room temperature half-metal

Epitaxial films including bulk-like cubic and wurtzite polymorphs of MnSb have been grown by molecular beam epitaxy on GaAs via careful control of the Sb4/Mn flux ratio. Nonzero-temperature density functional theory was used to predict ab initio the spin polarization as a function of reduced magnetization for the half-metals NiMnSb and cubic MnSb. In both cases, half-metallicity is lost at a threshold magnetization reduction, corresponding to a temperature T*< Tc. This threshold is far higher for cubic MnSb compared to NiMnSb and corresponds to T* > 350K, making epitaxial cubic MnSb a promising candidate for room temperature spin injection into semiconductors.

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