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Jonathan J. P. Peters

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physics.ins-det cond-mat.mes-hall cond-mat.mtrl-sci eess.IV physics.data-an

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preprint2022arXiv

Using Your Beam Efficiently: Reducing Electron-dose in the STEM via Flyback Compensation

In the scanning transmission electron microscope, fast-scanning and frame-averaging are two widely used approaches for reducing electron-beam damage and increasing image signal-noise ratio which require no additional specialised hardware. Unfortunately, for scans with short pixel dwell-times (less than 5 $μ$s), line flyback time represents an increasingly wasteful overhead. Although beam exposure during flyback causes damage while yielding no useful information, scan-coil hysteresis means that eliminating it entirely leads to unacceptably distorted images. In this work, we reduce this flyback to an absolute minimum by calibrating and correcting for this hysteresis in postprocessing. Substantial improvements in dose-efficiency can be realised (up to 20 %), while crystallographic and spatial fidelity is maintained for displacement/strain measurement.

preprint2021arXiv

Cost & Capability Compromises in STEM Instrumentation for Low-Voltage Imaging

Low voltage transmission electron microscopy (<=80 kV) has many applications in imaging beam-sensitive samples, such as metallic nanoparticles, which may become damaged at higher voltages. To improve resolution, spherical aberration can be corrected for in a Scanning Transmission Electron Microscope (STEM), however chromatic aberration may then dominate, limiting the ultimate resolution of the microscope. Using image simulations, we examine how a chromatic aberration corrector, different objective lenses, and different beam energy-spreads each affect the image quality of a gold nanoparticle imaged at low voltages in a spherical aberration-corrected STEM. Quantitative analysis of the simulated examples can inform the choice of instrumentation for low-voltage imaging. We here demonstrate a methodology whereby the optimum energy spread to operate a specific STEM can be deduced. This methodology can then be adapted to the specific sample and instrument of the reader, enabling them to make an informed economical choice as to what would be most beneficial for their STEM in the cost-conscious landscape of scientific infrastructure.

preprint2020arXiv

Exit Wavefunction Reconstruction from Single Transmission Electron Micrographs with Deep Learning

Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions were simulated with clTEM multislice propagation for 12789 materials from the Crystallography Open Database. Our networks can recover 224x224 wavefunctions in ~25 ms for a large range of physical hyperparameters and materials, and we demonstrate that performance improves as the distribution of wavefunctions is restricted. Phase recovery with deep learning overcomes the limitations of traditional methods: it is live, not susceptible to distortions, does not require microscope modification or multiple images, and can be applied to any imaging regime. This paper introduces multiple approaches to CTEM phase recovery with deep learning, and is intended to establish starting points to be improved upon by future research. Source code and links to our new datasets and pre-trained models are available at https://github.com/Jeffrey-Ede/one-shot

preprint2014arXiv

Lateral heterojunctions within monolayer semiconductors

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.