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Researcher profile

Riccardo Frisenda

Riccardo Frisenda contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.ins-detphysics.ed-phphysics.optics

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Published work

17 published item(s)

preprint2022arXiv

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Paper offers a low-cost and widely available substrate for electronics. It posses alternative characteristics to silicon, as it shows low density and high-flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-fabricate perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green, by increasing the bromide content on MAPb(I$_{1-x}$Br$_x$)$_3$ perovskite alloys. The devices show a fast and efficient response. The best performances are observed for the pure I and Br perovskite compositions, with a maximum responsivity of 376 mA/W on the MAPbBr$_3$ device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offer for the development of low-cost, biodegradable and easy-to-fabricate devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A system for the deterministic transfer of 2D materials under inert environmental conditions

The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes that require the use of very thick gloves to operate within the chamber or the implementation of several motorized micro-manipulators. Here, we set up a deterministic transfer system for 2D materials within a gloveless anaerobic chamber. Unlike other setups based on over-pressurized gloveboxes, in our system the operator can manipulate the 2D materials within the chamber with bare hands. This experimental setup allows us to exfoliate 2D materials and to deterministically place them at a desired location with accuracy in a controlled O2-free and very low humidity (<2% RH) atmosphere. We illustrate the potential of this system to work with air-sensitive 2D materials by comparing the stability of black phosphorus and perovskite flakes inside and outside the anaerobic chamber.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A system to test 2D optoelectronic devices in high vacuum

The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such &#39;all-surface materials&#39; present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. However, conventional optoelectronic probe-station testing systems are are not compatible with high vacuum operation and vacuum-compatible versions are rather expensive. Here, we present a high-vacuum system specifically designed to test electronic and optoelectronic devices based on 2D materials. This system can be implemented with low budget and it is mostly based on the assembly of commercially available standard vacuum and optic components. Despite the simplicity of this system we demonstrate full capabilities to characterize optoelectronic devices in a broad range of wavelengths with fast pumping/venting speed and possibility of modulating the device temperature (room temperature to ~150deg).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An inexpensive system for the deterministic transfer of 2D materials

The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough details to reproduce these systems by other research groups is very scarce in the literature. Moreover, these systems typically require the use of expensive optical and mechanical components hampering their applicability in research groups with low budget. Here we demonstrate how a deterministic placement system for 2D materials set up with full capabilities can be implemented under 900 Eur which can be easily implemented in low budget labs and educational labs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Biaxial strain tuning of interlayer excitons in bilayer MoS2

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are larger than those found for single-layer MoS2. Interestingly, the interlayer exciton feature also shifts upon biaxial strain but with a gauge factor that is systematically larger than that found for the A exciton, (-48 +- 4) meV/%. We attribute this larger gauge factor for the interlayer exciton to the strain tunable van der Waals interaction due to the Poisson effect (the interlayer distance changes upon biaxial strain).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$

We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain

The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ~200 meV/%. We further characterize the effect of biaxial strain on the electrical properties of the InSe devices. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ~450-1000, ~5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe band gap also translates in a strain-induced redshift of the spectral response of our InSe photodetectors with ΔEcut-off ~173 meV at a rate of ~360 meV/% of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

InSe Schottky diodes based on van der Waals contacts

Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

InSe: a two-dimensional semiconductor with superior flexibility

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young&#39;s modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young&#39;s modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microheater actuators as a versatile platform for strain engineering in 2D materials

We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

MoS$_2$-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite

We fabricate paper-supported semiconducting devices by rubbing a layered molybdenum disulfide (MoS2) crystal onto a piece of paper, similarly to the action of drawing/writing with a pencil on paper. We show that the abrasion between the MoS2 crystal and the paper substrate efficiently exfoliates the crystals, breaking the weak van der Waals interlayer bonds and leading to the deposition of a film of interconnected MoS2 platelets. Employing this simple method, that can be easily extended to other 2D materials, we fabricate MoS2-on-paper broadband photodectectors with spectral sensitivity from the ultraviolet (UV) to the near-infrared (NIR). We also used these paper-based photodetectors to acquire pictures of objects by mounting the photodetectors in a homebuilt single-pixel camera setup.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Superlattices based on van der Waals 2D materials

Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodical perturbation, each component contributing with different characteristics. Furthermore, in a 2D materials-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D materials based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D materials-based superlattices and we describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications for each type of superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré

Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thickness identification of thin InSe by optical microscopy methods

Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.

0 citations0 reviewsNo code linkedOpen access