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Qinghua Zhao

Qinghua Zhao contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2022arXiv

Ered: Enhanced Text Representations with Entities and Descriptions

External knowledge,e.g., entities and entity descriptions, can help humans understand texts. Many works have been explored to include external knowledge in the pre-trained models. These methods, generally, design pre-training tasks and implicitly introduce knowledge by updating model weights, alternatively, use it straightforwardly together with the original text. Though effective, there are some limitations. On the one hand, it is implicit and only model weights are paid attention to, the pre-trained entity embeddings are ignored. On the other hand, entity descriptions may be lengthy, and inputting into the model together with the original text may distract the model's attention. This paper aims to explicitly include both entities and entity descriptions in the fine-tuning stage. First, the pre-trained entity embeddings are fused with the original text representation and updated by the backbone model layer by layer. Second, descriptions are represented by the knowledge module outside the backbone model, and each knowledge layer is selectively connected to one backbone layer for fusing. Third, two knowledge-related auxiliary tasks, i.e., entity/description enhancement and entity enhancement/pollution task, are designed to smooth the semantic gaps among evolved representations. We conducted experiments on four knowledge-oriented tasks and two common tasks, and the results achieved new state-of-the-art on several datasets. Besides, we conduct an ablation study to show that each module in our method is necessary. The code is available at https://github.com/lshowway/Ered.

preprint2022arXiv

KESA: A Knowledge Enhanced Approach For Sentiment Analysis

Though some recent works focus on injecting sentiment knowledge into pre-trained language models, they usually design mask and reconstruction tasks in the post-training phase. In this paper, we aim to benefit from sentiment knowledge in a lighter way. To achieve this goal, we study sentence-level sentiment analysis and, correspondingly, propose two sentiment-aware auxiliary tasks named sentiment word cloze and conditional sentiment prediction. The first task learns to select the correct sentiment words within the input, given the overall sentiment polarity as prior knowledge. On the contrary, the second task predicts the overall sentiment polarity given the sentiment polarity of the word as prior knowledge. In addition, two kinds of label combination methods are investigated to unify multiple types of labels in each task. We argue that more information can promote the models to learn more profound semantic representation. We implement it in a straightforward way to verify this hypothesis. The experimental results demonstrate that our approach consistently outperforms pre-trained models and is additive to existing knowledge-enhanced post-trained models. The code and data are released at https://github.com/lshowway/KESA.

preprint2022arXiv

TraceNet: Tracing and Locating the Key Elements in Sentiment Analysis

In this paper, we study sentiment analysis task where the outcomes are mainly contributed by a few key elements of the inputs. Motivated by the two-streams hypothesis, we propose a neural architecture, named TraceNet, to address this type of task. It not only learns discriminative representations for the target task via its encoders, but also traces key elements at the same time via its locators. In TraceNet, both encoders and locators are organized in a layer-wise manner, and a smoothness regularization is employed between adjacent encoder-locator combinations. Moreover, a sparsity constraints are enforced on locators for tracing purposes and items are proactively masked according to the item weights output by locators.A major advantage of TraceNet is that the outcomes are easier to understand, since the most responsible parts of inputs are identified. Also, under the guidance of locators, it is more robust to attacks due to its focus on key elements and the proactive masking training strategy. Experimental results show its effectiveness for sentiment classification. Moreover, we provide several case studies to demonstrate its robustness and interpretability.

preprint2020arXiv

A system for the deterministic transfer of 2D materials under inert environmental conditions

The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N2 of Ar gloveboxes that require the use of very thick gloves to operate within the chamber or the implementation of several motorized micro-manipulators. Here, we set up a deterministic transfer system for 2D materials within a gloveless anaerobic chamber. Unlike other setups based on over-pressurized gloveboxes, in our system the operator can manipulate the 2D materials within the chamber with bare hands. This experimental setup allows us to exfoliate 2D materials and to deterministically place them at a desired location with accuracy in a controlled O2-free and very low humidity (<2% RH) atmosphere. We illustrate the potential of this system to work with air-sensitive 2D materials by comparing the stability of black phosphorus and perovskite flakes inside and outside the anaerobic chamber.

preprint2020arXiv

A system to test 2D optoelectronic devices in high vacuum

The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such &#39;all-surface materials&#39; present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires measurement systems operating in high-vacuum. However, conventional optoelectronic probe-station testing systems are are not compatible with high vacuum operation and vacuum-compatible versions are rather expensive. Here, we present a high-vacuum system specifically designed to test electronic and optoelectronic devices based on 2D materials. This system can be implemented with low budget and it is mostly based on the assembly of commercially available standard vacuum and optic components. Despite the simplicity of this system we demonstrate full capabilities to characterize optoelectronic devices in a broad range of wavelengths with fast pumping/venting speed and possibility of modulating the device temperature (room temperature to ~150deg).

preprint2020arXiv

An inexpensive system for the deterministic transfer of 2D materials

The development of systems for the deterministic transfer of two-dimensional (2D) materials have undoubtedly contributed to a great advance in the 2D materials research. In fact, they have made it possible to fabricate van der Waals heterostructures and 2D materials-based devices with complex architectures. Nonetheless, as far as we know, the amount of papers in the literature providing enough details to reproduce these systems by other research groups is very scarce in the literature. Moreover, these systems typically require the use of expensive optical and mechanical components hampering their applicability in research groups with low budget. Here we demonstrate how a deterministic placement system for 2D materials set up with full capabilities can be implemented under 900 Eur which can be easily implemented in low budget labs and educational labs.

preprint2020arXiv

Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain

The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gauge factor of up to ~200 meV/%. We further characterize the effect of biaxial strain on the electrical properties of the InSe devices. In the dark state, a large increase of the current is observed upon applied strain which gives a piezoresistive gauge factor value of ~450-1000, ~5-12 times larger than that of other 2D materials and of state-of-the-art silicon strain gauges. Moreover, the biaxial strain tuning of the InSe band gap also translates in a strain-induced redshift of the spectral response of our InSe photodetectors with ΔEcut-off ~173 meV at a rate of ~360 meV/% of strain, indicating a strong strain tunability of the spectral bandwidth of the photodetectors.

preprint2020arXiv

InSe Schottky diodes based on van der Waals contacts

Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.

preprint2020arXiv

InSe: a two-dimensional semiconductor with superior flexibility

Two-dimensional Indium Selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young&#39;s modulus of thin InSe (~1-2 layers to ~40 layers) flakes experimentally by using buckling-based methodology. We find that the Young&#39;s modulus has a value of 23.1 +- 5.2 GPa, one of the lowest values reported up to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

preprint2020arXiv

Tailoring Hot Exciton Dynamics in 2D Hybrid Perovskites through Cation Modification

We report a family of two-dimensional hybrid perovskites (2DHPs) based on phenethylammonium lead iodide ((PEA)$_2$PbI$_4$) that show complex structure in their low-temperature excitonic absorption and photoluminescence (PL) spectra as well as hot exciton PL. We replace the 2-position (ortho) H on the phenyl group of the PEA cation with F, Cl, or Br to systematically increase the cation&#39;s cross-sectional area and mass and study changes in the excitonic structure. These single atom substitutions substantially change the observable number of and spacing between discrete resonances in the excitonic absorption and PL spectra and drastically increase the amount of hot exciton PL that violates Kasha&#39;s rule by over an order of magnitude. To fit the progressively larger cations, the inorganic framework distorts and is strained, reducing the Pb-I-Pb bond angles and increasing the 2DHP band gap. Correlation between the 2DHP structure and steady-state and time-resolved spectra suggests the complex structure of resonances arises from one or two manifolds of states, depending on the 2DHP Pb-I-Pb bond angle (as)symmetry, and the resonances within a manifold are regularly spaced with an energy separation that decreases as the mass of the cation increases. The uniform separation between resonances and the dynamics that show excitons can only relax to the next-lowest state are consistent with a vibronic progression caused by a vibrational mode on the cation. These results demonstrate that simple changes to the structure of the cation can be used to tailor the properties and dynamics of the confined excitons without directly modifying the inorganic framework.

preprint2020arXiv

The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials. However, the mechanism behind the photocurrent generation in thin InSe photodetectors remains elusive. Here, we present a set of experiments aimed at explaining the strong scattering in the photoresponsivity values reported in the literature for thin InSe photodetectors. By performing optoelectronic measurements on thin InSe-based photodetectors operated under different environmental conditions we find that the photoresponsivity, the response time and the photocurrent power dependency are strongly correlated in this material. This observation indicates that the photogating effect plays an imporant role for thin InSe flakes, and it is the dominant mechanism in the ultra-high photoresponsivity of pristine InSe devices. In addition, when exposing the pristine InSe photodetectors to the ambient environment we observe a fast and irreversible change in the photoresponse, with a decrease in the photoresponsivity accompanied by an increase of the operating speed. We attribute this photodetector performance change (upon atmospheric exposure) to the decrease in the density of the traps present in InSe, due to the passivation of selenium vacancies by atmospheric oxygen species. This passivation is accompanied by a downward shift of the InSe Fermi level and by a decrease of the Fermi level pinning, which leads to an increase of the Schottky barrier between Au and InSe. Our study reveals the important role of traps induced by defects in tailoring the properties of devices based on 2D materials and offers a controllable route to design and functionalize thin InSe photodetectors to realize devices with either ultrahigh photoresposivity or fast operation speed.

preprint2020arXiv

Thickness identification of thin InSe by optical microscopy methods

Indium selenide (InSe), as a novel van der Waals layered semiconductor, has attracted a large research interest thanks to its excellent optical and electrical properties in the ultra-thin limit. Here, we discuss four different optical methods to quantitatively identify the thickness of thin InSe flakes on various substrates, such as SiO2/Si or transparent polymeric substrates. In the case of thin InSe deposited on a transparent substrate, the transmittance of the flake in the blue region of the visible spectrum can be used to estimate the thickness. For InSe supported by SiO2/Si, the thickness of the flakes can be estimated either by assessing their apparent colors or accurately analyzed using a Fresnel-law based fitting model of the optical contrast spectra. Finally, we also studied the thickness dependency of the InSe photoluminescence emission energy, which provides an additional tool to estimate the InSe thickness and it works both for InSe deposited on SiO2/Si and on a transparent polymeric substrate.