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Rajendra Prasad

Rajendra Prasad appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conHardware Architecturehep-exmath.DGmath.GMphysics.acc-phphysics.ins-det

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Published work

12 published item(s)

preprint2021arXiv

Precision laser diagnostics for LUXE

Strong field QED is an active research frontier. The investigation of fundamental phenomena such as pair creation, photon-photon and photon-electron interactions in the nonlinear QED regime are a formidable challenge -- both experimentally and theoretically. Several experiments around the world are being planned or in preparation to probe this strong field regime. LUXE (Laser Und XFEL Experiment) is an experimental platform which envisages the collision of the high quality 16.5 GeV electron beam from the European XFEL accelerator with a 100 TW class high power laser. One of the unique features of LUXE is to measure the key observables such as pair rates ($e^+e^-$) with unprecedented accuracy in the characterization of both beams together with ample statistics. The state-of-art detector technologies for high energy particle and photon detection enable percent level precision. The state-of-art high power lasers offer high quality laser beams, however, the residual shot-to-shot fluctuations coupled with the large nonlinearity of the processes under investigation form a particular challenge. An uncertainty of 5 percent on the absolute laser intensity already leads to a very large ( about 40 percent) uncertainty in the pair rate. Hence it becomes essential to control the laser parameters precisely. To mitigate this issue a full suite of laser diagnostics is being currently developed at the JETI40 laser in Jena with the aim of tagging the shot intensity to less than 1 percent. In this presentation, details of the laser and the diagnostics suit for the single shot tagging of all the laser parameters will be presented. Moreover, results from an ongoing campaign to properly relay image the beam without significant distortion of the laser beam parameters for post-diagnosis will be discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

On bi-slant submersions in complex geometry

In the present paper, we introduce bi-slant submersions from almost Hermitian manifolds onto Riemannian manifolds as a generalization of invariant, anti-invariant, semi-invariant, slant, semi-slant and hemi-slant Riemannian submersions. We mainly focus on bi-slant submersions from Kaehler manifolds. We provide a proper example of bi-slant submersion, investigate the geometry of foliations determined by vertical and horizontal distributions, and obtain the geometry of leaves of these distributions. Moreover, we obtain curvature relations between the base space, the total space and the fibres, and find geometric implications of these relations.

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preprint2013arXiv

Engineering Polarization Rotation in Ferroelectric Bismuth Titanate

Here, we report a combined experimental-theoretical study showing that collective application of rare earth doping on A-site and epitaxial strain to ferroelectric bismuth titanate does not lead to a very large c-axis polarization as reported previously. Further first principles calculations based on the examination of polarization tensor suggest that simultaneous Bi and Ti site doping could result in moderate polarization along c-axis of bismuth titanate which is typically a preferential axis of film growth and thus enabling c axis oriented films to have appreciable polarization. This approach could also be applicable to other ferroic oxides where one can correlate the doping, epitaxial strain, and polarization to design materials compositions resulting in epitaxial films grown along desired directions yielding substantial polarization.

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preprint2013arXiv

Optical Anisotropy in Bismuth Titanate: An Experimental and Theoretical Study

We report experimental and theoretical investigation of anisotropy in optical properties and their origin in the ferroelectric and paraelectric phases of bismuth titanate. Room temperature ellipsometric measurements performed on pulsed laser deposited bismuth titanate thin films of different orientations show anisotropy in the dielectric and optical constants, Subsequent first-principles calculations performed on the ground state structures of ferroelectric and high temperature paraelectric phases of bismuth titanate show that the material demonstrates anisotropic optical behavior in both ferroelectric and paraelectric phases. We further show that O 2p to Ti 3d transition is the primary origin of optical activity of the material while optical anisotropy results from the asymmetrically oriented Ti-O bonds in TiO6 octehdra in the unit cell.

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preprint2013arXiv

Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier, but also give rise to the observed ferroelectricity, making GFO an unique single phase multiferroic.

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preprint2012arXiv

Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical behavior of magnetoelectric gallium ferrite. Optical properties such as band-gap, refractive indices and dielectric constants were experimentally obtained by performing ellipsometric studies over the energy range 0.8 eV to 4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data was compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site-disorder in the experimentally derived strained GaFeO3 films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe3d states leading to a lowered band-gap of the material.

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preprint2011arXiv

`17-15' Superconductivity - Rh17S15 and Pd17Se15

The presence of strongly correlated superconductivity in Rh17S15 has been recently established. In this work, we compare the normal and superconducting parameters of a single crystal of Rh17S15 with those of a polycrystalline sample of Pd17Se15 which is reported here for the first time to be a superconductor below 2.2 K. Pd17Se15, which is iso-structural to Rh17S15 (space group Pm3m), has very different properties and provides for an interesting study in contrast with Rh17S15. We see that large unit volume of Pd17Se15 and the large separation of Pd-Pd atoms in its structure as compared those in a pure Pd metal lead to the absence of strong correlations in this compound. Finally, we report band structure calculations on these two compounds and compare the density of states with estimates from heat capacity data. Upper critical field, Heat capacity (down to 500 mK), Hall effect and band structure studies suggest that Rh17S15 is a multiband superconductor.

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preprint2011arXiv

Electronic Structures, Born Effective Charges and Spontaneous Polarization in Magnetoelectric Gallium Ferrite

We present a theoretical study of the structure-property correlation in gallium ferrite, based on the first principles calculations followed by a subsequent comparison with the experiments. Local spin density approximation (LSDA+U) of the density functional theory has been used to calculate the ground state structure, electronic band structure, density of states and Born effective charges. Calculations reveal that the ground state structure is orthorhombic Pc21n having A-type antiferromagnetic spin configuration, with lattice parameters matching well with those obtained experimentally. Plots of partial density of states of constituent ions exhibit noticeable hybridization of Fe 3d, Ga 4s, Ga 4p and O 2p states. However, the calculated charge density and electron localization function show largely ionic character of the Ga/Fe-O bonds which is also supported by lack of any significant anomaly in the calculated Born effective charges with respect to the corresponding nominal ionic charges. The calculations show a spontaneous polarization of ~ 59 microC/cm^2 along b-axis which is largely due to asymmetrically placed Ga1, Fe1, O1, O2 and O6 ions.

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preprint2011arXiv

First Principle Study of Magnetism and Magneto-structural Coupling in Gallium Ferrite

We report a first-principles study of the magnetic properties, site disorder and magneto-structural coupling in multiferroic gallium ferrite (GFO) using local spin density approximation (LSDA+U) of density functional theory. The calculations of the ground state A-type antiferromagnetic structure predict magnetic moments consistent with the experiments whilst consideration of spin-orbit coupling yields a net orbital moment of ~ 0.025 Bohr magneton/Fe site also in good accordance with the experiments. We find that though site disorder is not spontaneous in the ground state, interchange between Fe2 and Ga2 sites is most favored in the disordered state. The results show that ferrimagnetism in GFO is due to Ga-Fe site disordering such that Fe spins at Ga1 and Ga2 sites are antiferromagnetically aligned while maintaining ferromagnetic coupling between Fe spins at Ga1 and Fe1 sites as well as between Fe spins at Ga2 and Fe2 sites. The effect of spin configuration on the structural distortion clearly indicates presence of magneto-structural coupling in GFO.

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preprint2011arXiv

Power comparison of CMOS and adiabatic full adder circuit

Full adders are important components in applications such as digital signal processors (DSP) architectures and microprocessors. Apart from the basic addition adders also used in performing useful operations such as subtraction, multiplication, division, address calculation, etc. In most of these systems the adder lies in the critical path that determines the overall performance of the system. In this paper conventional complementary metal oxide semiconductor (CMOS) and adiabatic adder circuits are analyzed in terms of power and transistor count using 0.18UM technology.

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preprint2010arXiv

First-Principles Calculation of Born Effective Charges and Spontaneous Polarization of Ferroelectric Bismuth Titanate

In this study, we present the results of our first-principles calculations of the band structure, density of states and the Born effective charge tensors for the ferroelectric (ground state B1a1) and paraelectric (I4/mmm) phases of bismuth titanate. The calculations are done using the generalized gradient approximation (GGA) as well as the local density approximation (LDA) of the density functional theory. In contrast to the literature, our calculations on B1a1 structure using GGA and LDA yield smaller indirect band gaps as compared to the direct band gaps, in agreement with the experimental data. The density of states shows considerable hybridization among Ti 3d, Bi 6p and O 2p states indicating covalent nature of the bonds leading to the ferroelectric instability. The Born effective charge tensors of the constituent ions for the ground state (B1a1) and paraelectric (I4/mmm) structures were calculated using the Berry phase method. This is followed by the calculation of the spontaneous polarization for the ferroelectric B1a1 phase using the Born effective charge tensors of the individual ions. The calculated value for the spontaneous polarization of ferroelectric bismuth titanate using different Born effective charges was found to be in the range of 55+/-13 $μ$C/cm2 in comparison to the reported experimental value of (50+/-10 $μ$C/cm2) for single crystals. The origin of ferroelectricity is attributed to the relatively large displacements of those oxygen ions in the TiO6 octahedra that lie along the a-axis of the bismuth titanate crystal.

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