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Rajeev Gupta

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Published work

16 published item(s)

preprint2023arXiv

Cesàro summability of Taylor series in higher order weighted Dirichlet type spaces

For a positive integer $m$ and a finite non-negative Borel measure $μ$ on the unit circle, we study the Hadamard multipliers of higher order weighted Dirichlet-type spaces $\mathcal H_{μ, m}$. We show that if $α>\frac{1}{2},$ then for any $f$ in $\mathcal H_{μ, m},$ the sequence of generalized Ces{à}ro sums $\{σ_n^α[f]\}$ converges to $f$. We further show that if $α=\frac{1}{2}$ then for the Dirac delta measure supported at any point on the unit circle, the previous statement breaks down for every positive integer $m$.

preprint2022arXiv

A local Douglas formula for higher order weighted Dirichlet-type integrals

We prove a local Douglas formula for higher order weighted Dirichlet-type integrals. With the help of this formula, we study the multiplier algebra of the associated higher order weighted Dirichlet-type spaces $\mathcal H_{\pmbμ},$ induced by an $m$-tuple $\pmb μ=(μ_1,\ldots,μ_{m})$ of finite non-negative Borel measures on the unit circle. In particular, it is shown that any weighted Dirichlet-type space of order $m,$ for $m\geqslant 3,$ forms an algebra under pointwise product. We also prove that every non-zero closed $M_z$-invariant subspace of $\mathcal H_{\pmbμ},$ has codimension $1$ property if $m\geqslant 3$ or $μ_2$ is finitely supported. As another application of local Douglas formula obtained in this article, it is shown that for any $m\geqslant 2,$ weighted Dirichlet-type space of order $m$ does not coincide with any de Branges-Rovnyak space $\mathcal H(b)$ with equivalence of norms.

preprint2021arXiv

Room Temperature Structural, Magnetic and Dielectric Characteristics of La Doped CuO Bulk Multiferroic

In this manuscript, we report room temperature structural, microstructural, optical, dielectric, and magnetic properties of CuO and Cu0.995La0.005 ceramics, synthesized by solid-state reaction method. La doping in CuO leads to the evolution of compact and dense microstructure with reduced porosity. Due to noticeable differences in the ionic radii of, La doping creates vacancy defects which induce considerable strain in the CuO lattice resulting in a reduction in the lattice parameters and cell volume. However, both ceramics processes a similar monoclinic structure with the C2/c space group. Detailed characterization using XPS, Raman, and FTIR spectroscopy confirmed the incorporation of the La3+ in CuO lattice. Interestingly, La doping enhances the dielectric constant by more than three times and results in a reduced leakage current. The onset of a large dielectric constant is attributed to dense microstructure and strain/distortion in CuO lattice after La doping. Additionally, the band-gap of Cu0.995La0.005 ceramics decreases which is attributed to increased vacancy defect concentration that creates intermediate dopant energy level within bandgap of CuO matrix. Furthermore, improvement in magnetic and dielectric properties is also discussed and correlated with the grain size in La-doped CuO.

preprint2021arXiv

Weighted Join Operators on Directed Trees

A rooted directed tree $\mathscr T=(V, E)$ with can be extended to a directed graph $\mathscr T_\infty=(V_\infty, E_\infty)$ by adding a vertex $\infty$ to $V$ and declaring each vertex in $V$ as a parent of $\infty.$ One may associate with the extended directed tree a family of semigroup structures $\sqcup_{b}$ with extreme ends being induced by the join operation $\sqcup$ and the meet operation $\sqcap$. Each semigroup structure among these leads to a family of densely defined linear operators $W^{b}_{λ_u}$ acting on $\ell^2(V),$ which we refer to as weighted join operators at a given base point $b \in V_{\infty}$ with prescribed vertex $u \in V$. The extreme ends of this family are weighted join operators $W^{\mathsf{root}}_{λ_u}$ and weighted meet operators $W^{\infty}_{λ_u}$. In this paper, we systematically study these operators. We also present a more involved counter-part of weighted join operators on rootless directed trees. In both cases, the class of weighted join operators overlaps with the well-studied classes of complex Jordan operators and $n$-symmetric operators. An important half of this paper is devoted to the study of rank one extensions $W_{f, g}$ of weighted join operators, where $f \in \ell^2(V)$ and $g : V \to \mathbb C$ is unspecified. Unlike weighted join operators, these operators are not necessarily closed. We provide a couple of compatibility conditions involving the weight system $λ_u$ and $g$ to ensure closedness of $W_{f, g}$. We discuss the role of the Gelfand-triplet in the realization of the Hilbert space adjoint of $W_{f, g}$. Further, we describe various spectral parts of $W_{f, g}$ in terms of the weight system and the tree data. We also provide sufficient conditions for $W_{f, g}$ to be a sectorial operator. In case $\mathscr T$ is leafless, we characterize rank one extensions $W_{f, g}$, which admit compact resolvent.

preprint2016arXiv

Room temperature multiferroism in polycrystalline thin films of gallium ferrite

Sol-gel deposited (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates are characterized for room temperature multiferroism. Structural characterization using X-ray diffraction and Raman spectroscopy confirms formation of single phase with nano-sized crystallites. Temperature dependent magnetization study demonstrates ferri to paramagnetic transition at ~300 K. Room temperature piezoresponse force microscopic analysis reveals local 180 degree phase switching of ferroelectric domains at very high coercive field EC, ~ 1350 kV/cm consistent with recent experimental and first-principles studies. Our study opens up possibility of integrating polycrystalline GFO in novel room temperature multiferroic devices.

preprint2016arXiv

The Carathéodory-Fejér Interpolation Problems and the von-Neumann Inequality

The validity of the von-Neumann inequality for commuting $n$ - tuples of $3\times 3$ matrices remains open for $n\geq 3$. We give a partial answer to this question, which is used to obtain a necessary condition for the Carathéodory-Fejér interpolation problem on the polydisc $\mathbb D^n.$ In the special case of $n=2$ (which follows from Ando's theorem as well), this necessary condition is made explicit. An alternative approach to the Carathéodory-Fejér interpolation problem, in the special case of $n=2,$ adapting a theorem of Korányi and Pukánzsky is given. As a consequence, a class of polynomials are isolated for which a complete solution to the Carathéodory-Fejér interpolation problem is easily obtained. A natural generalization of the Hankel operators on the Hardy space of $H^2(\mathbb T^2)$ then becomes apparent. Many of our results remain valid for any $n\in \mathbb N,$ however, the computations are somewhat cumbersome for $n>2$ and are omitted. The inequality $\lim_{n\to \infty}C_2(n)\leq 2 K^\mathbb C_G$, where $K_G^\mathbb C$ is the complex Grothendieck constant and \[C_2(n)=\sup\big\{\|p(\boldsymbol T)\|:\|p\|_{\mathbb D^n,\infty}\leq 1, \|\boldsymbol T\|_{\infty} \leq 1 \big\}\] is due to Varopoulos. Here the supremum is taken over all complex polynomials $p$ in $n$ variables of degree at most $2$ and commuting $n$ - tuples $\boldsymbol T:=(T_1,\ldots,T_n)$ of contractions. We show that \[\lim_{n\to \infty}C_2(n)\leq \frac{3\sqrt{3}}{4} K^\mathbb C_G\] obtaining a slight improvement in the inequality of Varopoulos. We show that the normed linear space $\ell^1(n),$ $n>1,$ has no isometric embedding into $k\times k$ complex matrices for any $k\in \mathbb N$ and discuss several infinite dimensional operator space structures on it.

preprint2015arXiv

Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films

Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 μC/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 μC/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.

preprint2013arXiv

Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier, but also give rise to the observed ferroelectricity, making GFO an unique single phase multiferroic.

preprint2012arXiv

Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical behavior of magnetoelectric gallium ferrite. Optical properties such as band-gap, refractive indices and dielectric constants were experimentally obtained by performing ellipsometric studies over the energy range 0.8 eV to 4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data was compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site-disorder in the experimentally derived strained GaFeO3 films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe3d states leading to a lowered band-gap of the material.

preprint2012arXiv

Spin Glass-like Phase below ~ 210 K in Magnetoelectric Gallium Ferrite

In this letter we show the presence of a spin-glass like phase in single crystals of magnetoelectric gallium ferrite (GaFeO3) below ~210 K via temperature dependent ac and dc magnetization studies. Analysis of frequency dispersion of the susceptibility peak at ~210 K using the critical slowing down model and Vogel-Fulcher law strongly suggests the existence of a classical spin-glass like phase. This classical spin glass behavior of GaFeO3 is understood in terms of an outcome of geometrical frustration arising from the inherent site disorder among the antiferromagnetically coupled Fe ions located at octahedral Ga and Fe sites.

preprint2011arXiv

Composition Dependence of Structural Parameters and Properties of Gallium Ferrite

We show the effect of composition on structural and magnetic characteristics of pure phase polycrystalline Ga<2-x>Fe<x>O<3> (GFO) for compositions between 0.8 <= x <= 1.3. X-ray analysis reveals that lattice parameters of GFO exhibit a linear dependence on Fe content in single phase region indicating manifestation of Vegard's law. Increasing Fe content of the samples also leads to stretching of bonds as indicated by the Raman peak shifts. Further, low temperature magnetic measurements show that the coercivity of the samples is maximum for Ga:Fe ratio of 1:1 driven by a competition between decreasing crystallite size and increasing magnetic anisotropy.

preprint2011arXiv

Electronic Structures, Born Effective Charges and Spontaneous Polarization in Magnetoelectric Gallium Ferrite

We present a theoretical study of the structure-property correlation in gallium ferrite, based on the first principles calculations followed by a subsequent comparison with the experiments. Local spin density approximation (LSDA+U) of the density functional theory has been used to calculate the ground state structure, electronic band structure, density of states and Born effective charges. Calculations reveal that the ground state structure is orthorhombic Pc21n having A-type antiferromagnetic spin configuration, with lattice parameters matching well with those obtained experimentally. Plots of partial density of states of constituent ions exhibit noticeable hybridization of Fe 3d, Ga 4s, Ga 4p and O 2p states. However, the calculated charge density and electron localization function show largely ionic character of the Ga/Fe-O bonds which is also supported by lack of any significant anomaly in the calculated Born effective charges with respect to the corresponding nominal ionic charges. The calculations show a spontaneous polarization of ~ 59 microC/cm^2 along b-axis which is largely due to asymmetrically placed Ga1, Fe1, O1, O2 and O6 ions.

preprint2011arXiv

Probing Magnetoelastic Coupling and Structural Changes in Magnetoelectric Gallium Ferrite

Temperature dependent X-ray diffraction and Raman spectroscopic studies were carried out on the flux grown single crystals of gallium ferrite with Ga:Fe ratio of 0.9:1.1. Site occupancy calculations from the Rietveld refinement of the X-ray data led to the estimated magnetic moment of ~0.60 \muB /f.u. which was in good agreement with the experimental data. Combination of these two measurements indicates that there is no structural phase transition in the material between 18 K to 700 K. A detailed line shape analysis of the Raman mode at ~375 cm^-1 revealed a discontinuity in the peak position data indicating the presence of spin-phonon coupling in gallium ferrite. A correlation of the peak frequency with the magnetization data led to two distinct regions across a temperature ~180 K with appreciable change in the spin-phonon coupling strength from ~ 0.9 cm^-1 (T < 180 K) to 0.12 cm-1 (180 K < T < Tc). This abrupt change in the coupling strength at ~180 K strongly suggests an altered spin dynamics across this temperature.

preprint2009arXiv

Suppression of Jahn-Teller distortion by chromium and magnesium doping in spinel LiMn2O4: A first-principles study using GGA and GGA+U

The effect of doping spinel LiMn2O4 with chromium and magnesium has been studied using the first-principles spin density functional theory within GGA (generalized gradient approximation) and GGA+U. We find that GGA and GGA+U give different ground states for pristine LiMn2O4 and same ground state for doped systems. For LiMn2O4 the body centered tetragonal phase was found to be the ground state structure using GGA and face centered orthorhombic using GGA+U, while for LiM0.5Mn1.5O4 (M= Cr or Mg) it was base centered monoclinic and for LiMMnO4 (M= Cr or Mg) it was body centered orthorhombic in both GGA and GGA+U. We find that GGA predicts the pristine LiMn2O4 to be metallic while GGA+U predicts it to be the insulating which is in accordance with the experimental observations. For doped spinels, GGA predicts the ground state to be half metallic while GGA+U predicts it to be insulating or metallic depending on the doping concentration. GGA+U predicts insulator-metal-insulator transition as a function of doping in case of Cr and in case of Mg the ground state is found to go from insulating to a half metallic state as a function of doping. Analysis of the charge density and the density of states suggest a charge transfer from the dopants to the neighboring oxygen atoms and manganese atoms. We have calculated the Jahn-Teller active mode displacement Q3 for doped compounds using GGA and GGA+U. The bond lengths calculated from GGA+U are found to be in better agreement with the experimental bond lengths. Based on the bond lengths of metal and oxygen, we have also estimated the average oxidation states of the dopants.