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Ashish Garg

Ashish Garg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciComputational Engineering, Finance, and ScienceNumerical Analysis

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Published work

18 published item(s)

preprint2021arXiv

Phase evolution and enhanced room temperature piezoelectric properties response of lead-free Ru doped BaTiO3 ceramic

Recent years have witnessed considerable work on the development of lead-free piezoelectric ceramic materials and their structure-property correlations. The development of piezo response is a strong function of phase evolution in these materials. In this work, we report the effect of Ru doping and consequent phase evolution on maximization of piezoelectric response of polycrystalline lead-free barium titanate, depicted as Ba(RuxTi1-x)O3 (BRT). The samples were prepared in a narrow compositional range of using conventional solid-state reaction method. Ru doping increases the leakage current of BaTiO3 samples attributed to increased oxygen vacancy concentration due to substitution of Ti4+ by Ru3+. Detailed structural analysis reveals samples exhibiting coexistence of tetragonal (space group: P4mm) and orthorhombic (space group: Amm2) structured phases near the room temperature reveal relatively enhanced piezoelectric properties. The BRT sample with Ru content of 2 mol% yields a maximum longitudinal piezoelectric coefficient, d33 of 269 pC/N, a high strain value of 0.16% with a large remnant polarization of 19 micro C/cm2 and a coercive field of 5.8 kV/cm. We propose that the 4d orbital of Ruthenium plays a crucial role in improving the functional properties and in decreasing the ferroelectric Curie temperature (Tc). Our work provides clues into tailoring the phase evolution for designing lead-free piezoelectric materials with enhanced piezoelectric property.

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preprint2021arXiv

Room Temperature Structural, Magnetic and Dielectric Characteristics of La Doped CuO Bulk Multiferroic

In this manuscript, we report room temperature structural, microstructural, optical, dielectric, and magnetic properties of CuO and Cu0.995La0.005 ceramics, synthesized by solid-state reaction method. La doping in CuO leads to the evolution of compact and dense microstructure with reduced porosity. Due to noticeable differences in the ionic radii of, La doping creates vacancy defects which induce considerable strain in the CuO lattice resulting in a reduction in the lattice parameters and cell volume. However, both ceramics processes a similar monoclinic structure with the C2/c space group. Detailed characterization using XPS, Raman, and FTIR spectroscopy confirmed the incorporation of the La3+ in CuO lattice. Interestingly, La doping enhances the dielectric constant by more than three times and results in a reduced leakage current. The onset of a large dielectric constant is attributed to dense microstructure and strain/distortion in CuO lattice after La doping. Additionally, the band-gap of Cu0.995La0.005 ceramics decreases which is attributed to increased vacancy defect concentration that creates intermediate dopant energy level within bandgap of CuO matrix. Furthermore, improvement in magnetic and dielectric properties is also discussed and correlated with the grain size in La-doped CuO.

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preprint2016arXiv

Room temperature multiferroism in polycrystalline thin films of gallium ferrite

Sol-gel deposited (010) textured polycrystalline thin films of gallium ferrite (GaFeO3 or GFO) on n-Si(100) and Pt/Si(111) substrates are characterized for room temperature multiferroism. Structural characterization using X-ray diffraction and Raman spectroscopy confirms formation of single phase with nano-sized crystallites. Temperature dependent magnetization study demonstrates ferri to paramagnetic transition at ~300 K. Room temperature piezoresponse force microscopic analysis reveals local 180 degree phase switching of ferroelectric domains at very high coercive field EC, ~ 1350 kV/cm consistent with recent experimental and first-principles studies. Our study opens up possibility of integrating polycrystalline GFO in novel room temperature multiferroic devices.

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preprint2015arXiv

Ferroelectric polarization switching with a remarkably high activation-energy in orthorhombic GaFeO3 thin films

Orthorhombic GaFeO3 (o-GFO) with the polar Pna21 space group is a prominent ferrite by virtue of its piezoelectricity and ferrimagnetism, coupled with magneto-electric effects. Herein, we unequivocally demonstrate a large ferroelectric remanent polarization in undoped o-GFO thin films by adopting either a hexagonal strontium titanate (STO) or a cubic yttrium-stabilized zirconia (YSZ) substrate. The polarization-electric-field hysteresis curves of the polar c-axis-grown o-GFO film on a SrTiO3/STO substrate show the net switching polarization of ~35 μC/cm2 with an unusually high coercive field of +-1400 kV/cm at room temperature. The PUND measurement also demonstrates the switching polarization of ~26 μC/cm2. The activation energy for the polarization switching, as obtained by density-functional theory calculations, is remarkably high, 1.05 eV per formula unit. This high value accounts for the observed stability of the polar Pna21 phase over a wide range of temperature up to 1368 K.

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preprint2014arXiv

Numerical Investigation of Effects of Compound Angle and Length to Diameter Ratio on Adiabatic Film Cooling Effectiveness

A modification has been done in the normal injection hole of 35 degree, by injecting the cold fluid at different angles(compound angle) in lateral direction, providing a significant change in the shape of holes which later we found in our numerical investigation giving good quality of effectiveness in cooling. Different L/D ratios are also studied for each compound angle. The numerical simulation is performed based on Reynolds Averaged Navier-Stokes(RANS) equations with k-epsilon turbulence model by using Fluent(Commercial Software). Adiabatic Film Cooling Effectiveness has been studied for compound angles of (0, 30, 45 and 60 degrees) and L/D ratios of (1, 2, 3 and 4) on a hole of 6mm diameter with blowing ratio 0.5. The findings are obtained from the results, concludes that the trend of laterally averaged adiabatic effectiveness is the function of L/D ratio and compound angle.

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preprint2013arXiv

Engineering Polarization Rotation in Ferroelectric Bismuth Titanate

Here, we report a combined experimental-theoretical study showing that collective application of rare earth doping on A-site and epitaxial strain to ferroelectric bismuth titanate does not lead to a very large c-axis polarization as reported previously. Further first principles calculations based on the examination of polarization tensor suggest that simultaneous Bi and Ti site doping could result in moderate polarization along c-axis of bismuth titanate which is typically a preferential axis of film growth and thus enabling c axis oriented films to have appreciable polarization. This approach could also be applicable to other ferroic oxides where one can correlate the doping, epitaxial strain, and polarization to design materials compositions resulting in epitaxial films grown along desired directions yielding substantial polarization.

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preprint2013arXiv

Optical Anisotropy in Bismuth Titanate: An Experimental and Theoretical Study

We report experimental and theoretical investigation of anisotropy in optical properties and their origin in the ferroelectric and paraelectric phases of bismuth titanate. Room temperature ellipsometric measurements performed on pulsed laser deposited bismuth titanate thin films of different orientations show anisotropy in the dielectric and optical constants, Subsequent first-principles calculations performed on the ground state structures of ferroelectric and high temperature paraelectric phases of bismuth titanate show that the material demonstrates anisotropic optical behavior in both ferroelectric and paraelectric phases. We further show that O 2p to Ti 3d transition is the primary origin of optical activity of the material while optical anisotropy results from the asymmetrically oriented Ti-O bonds in TiO6 octehdra in the unit cell.

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preprint2013arXiv

Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier, but also give rise to the observed ferroelectricity, making GFO an unique single phase multiferroic.

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preprint2012arXiv

Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical behavior of magnetoelectric gallium ferrite. Optical properties such as band-gap, refractive indices and dielectric constants were experimentally obtained by performing ellipsometric studies over the energy range 0.8 eV to 4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data was compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site-disorder in the experimentally derived strained GaFeO3 films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe3d states leading to a lowered band-gap of the material.

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preprint2012arXiv

Spin Glass-like Phase below ~ 210 K in Magnetoelectric Gallium Ferrite

In this letter we show the presence of a spin-glass like phase in single crystals of magnetoelectric gallium ferrite (GaFeO3) below ~210 K via temperature dependent ac and dc magnetization studies. Analysis of frequency dispersion of the susceptibility peak at ~210 K using the critical slowing down model and Vogel-Fulcher law strongly suggests the existence of a classical spin-glass like phase. This classical spin glass behavior of GaFeO3 is understood in terms of an outcome of geometrical frustration arising from the inherent site disorder among the antiferromagnetically coupled Fe ions located at octahedral Ga and Fe sites.

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preprint2011arXiv

Composition Dependence of Structural Parameters and Properties of Gallium Ferrite

We show the effect of composition on structural and magnetic characteristics of pure phase polycrystalline Ga<2-x>Fe<x>O<3> (GFO) for compositions between 0.8 <= x <= 1.3. X-ray analysis reveals that lattice parameters of GFO exhibit a linear dependence on Fe content in single phase region indicating manifestation of Vegard's law. Increasing Fe content of the samples also leads to stretching of bonds as indicated by the Raman peak shifts. Further, low temperature magnetic measurements show that the coercivity of the samples is maximum for Ga:Fe ratio of 1:1 driven by a competition between decreasing crystallite size and increasing magnetic anisotropy.

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preprint2011arXiv

Electronic Structures, Born Effective Charges and Spontaneous Polarization in Magnetoelectric Gallium Ferrite

We present a theoretical study of the structure-property correlation in gallium ferrite, based on the first principles calculations followed by a subsequent comparison with the experiments. Local spin density approximation (LSDA+U) of the density functional theory has been used to calculate the ground state structure, electronic band structure, density of states and Born effective charges. Calculations reveal that the ground state structure is orthorhombic Pc21n having A-type antiferromagnetic spin configuration, with lattice parameters matching well with those obtained experimentally. Plots of partial density of states of constituent ions exhibit noticeable hybridization of Fe 3d, Ga 4s, Ga 4p and O 2p states. However, the calculated charge density and electron localization function show largely ionic character of the Ga/Fe-O bonds which is also supported by lack of any significant anomaly in the calculated Born effective charges with respect to the corresponding nominal ionic charges. The calculations show a spontaneous polarization of ~ 59 microC/cm^2 along b-axis which is largely due to asymmetrically placed Ga1, Fe1, O1, O2 and O6 ions.

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preprint2011arXiv

First Principle Study of Magnetism and Magneto-structural Coupling in Gallium Ferrite

We report a first-principles study of the magnetic properties, site disorder and magneto-structural coupling in multiferroic gallium ferrite (GFO) using local spin density approximation (LSDA+U) of density functional theory. The calculations of the ground state A-type antiferromagnetic structure predict magnetic moments consistent with the experiments whilst consideration of spin-orbit coupling yields a net orbital moment of ~ 0.025 Bohr magneton/Fe site also in good accordance with the experiments. We find that though site disorder is not spontaneous in the ground state, interchange between Fe2 and Ga2 sites is most favored in the disordered state. The results show that ferrimagnetism in GFO is due to Ga-Fe site disordering such that Fe spins at Ga1 and Ga2 sites are antiferromagnetically aligned while maintaining ferromagnetic coupling between Fe spins at Ga1 and Fe1 sites as well as between Fe spins at Ga2 and Fe2 sites. The effect of spin configuration on the structural distortion clearly indicates presence of magneto-structural coupling in GFO.

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preprint2011arXiv

Probing Magnetoelastic Coupling and Structural Changes in Magnetoelectric Gallium Ferrite

Temperature dependent X-ray diffraction and Raman spectroscopic studies were carried out on the flux grown single crystals of gallium ferrite with Ga:Fe ratio of 0.9:1.1. Site occupancy calculations from the Rietveld refinement of the X-ray data led to the estimated magnetic moment of ~0.60 \muB /f.u. which was in good agreement with the experimental data. Combination of these two measurements indicates that there is no structural phase transition in the material between 18 K to 700 K. A detailed line shape analysis of the Raman mode at ~375 cm^-1 revealed a discontinuity in the peak position data indicating the presence of spin-phonon coupling in gallium ferrite. A correlation of the peak frequency with the magnetization data led to two distinct regions across a temperature ~180 K with appreciable change in the spin-phonon coupling strength from ~ 0.9 cm^-1 (T < 180 K) to 0.12 cm-1 (180 K < T < Tc). This abrupt change in the coupling strength at ~180 K strongly suggests an altered spin dynamics across this temperature.

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preprint2011arXiv

Vertex-centroid finite volume scheme on tetrahedral grids for conservation laws

Vertex-centroid schemes are cell-centered finite volume schemes for conservation laws which make use of vertex values to construct high resolution schemes. The vertex values must be obtained through a consistent averaging (interpolation) procedure. A modified interpolation scheme is proposed which is better than existing schemes in giving positive weights in the interpolation formula. A simplified reconstruction scheme is also proposed which is also more accurate and efficient. For scalar conservation laws, we develop limited versions of the schemes which are stable in maximum norm by constructing suitable limiters. The schemes are applied to compressible flows governed by the Euler equations of inviscid gas dynamics.

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preprint2010arXiv

Absence of Morphotropic Phase Boundary Effects in BiFeO3-PbTiO3 Thin Films Grown via a Chemical Multilayer Deposition Method

Here, we report the unusual behaviour shown by the (BiFeO3)1-x-(PbTiO3)x (BF-xPT) films prepared using a multilayer deposition approach by chemical solution deposition method. Thin film samples of various compositions were prepared by depositing several bilayers of BF and PT precursors by varying the BF or PT layer thicknesses. X-ray diffraction showed that final samples of all compositions show mixing of the two compounds resulting in a single phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk equilibrium compositions, our samples show a monoclinic (MA type) structure suggesting disappearance of morphotropic phase boundary (MPB) about x = 0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of remnant polarization at MPB as shown by the ferroelectric measurements. Magnetic measurements show that the magnetization of the samples increases with increasing BF content. Significant magnetization of the samples indicates melting of spin spirals in the BF-xPT arising from random distribution of iron atoms across the film. Absence of Fe2+ ions in the films was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that used thin film processing methodology significantly changes the structural evolution in contrast to predictions from the equilibrium phase diagram as well as modify the functional characteristics of BP-xPT system dramatically.

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preprint2010arXiv

First-Principles Calculation of Born Effective Charges and Spontaneous Polarization of Ferroelectric Bismuth Titanate

In this study, we present the results of our first-principles calculations of the band structure, density of states and the Born effective charge tensors for the ferroelectric (ground state B1a1) and paraelectric (I4/mmm) phases of bismuth titanate. The calculations are done using the generalized gradient approximation (GGA) as well as the local density approximation (LDA) of the density functional theory. In contrast to the literature, our calculations on B1a1 structure using GGA and LDA yield smaller indirect band gaps as compared to the direct band gaps, in agreement with the experimental data. The density of states shows considerable hybridization among Ti 3d, Bi 6p and O 2p states indicating covalent nature of the bonds leading to the ferroelectric instability. The Born effective charge tensors of the constituent ions for the ground state (B1a1) and paraelectric (I4/mmm) structures were calculated using the Berry phase method. This is followed by the calculation of the spontaneous polarization for the ferroelectric B1a1 phase using the Born effective charge tensors of the individual ions. The calculated value for the spontaneous polarization of ferroelectric bismuth titanate using different Born effective charges was found to be in the range of 55+/-13 $μ$C/cm2 in comparison to the reported experimental value of (50+/-10 $μ$C/cm2) for single crystals. The origin of ferroelectricity is attributed to the relatively large displacements of those oxygen ions in the TiO6 octahedra that lie along the a-axis of the bismuth titanate crystal.

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preprint2010arXiv

Structural Changes and Ferroelectric Properties of BiFeO<sub>3</sub>-PbTiO<sub>3</sub> Thin Films Grown via a Chemical Multilayer Deposition Method

Thin films of (1-x)BiFeO<sub>3</sub>-xPbTiO<sub>3</sub> (BF-xPT) with x ~ 0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700°C in nitrogen show pure perovskite phase formation. In contrast to the equilibrium tetragonal structure for the overall molar composition of BF:PT::40:60, we find monoclinic structured BF-xPT phase of M<sub>A</sub> type. Piezo-force microscopy confirmed ferroelectric switching in the films and revealed different normal and lateral domain distributions in the samples. Room temperature electrical measurements show good quality ferroelectric hysteresis loops with remanent polarization, Pr, of up to 18 μC/cm<sup>2</sup> and leakage currents as low as 10<sup>-7</sup> A/cm<sup>2</sup>.

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