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R. S. Liu

R. S. Liu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other cond-mat.str-el cond-mat.supr-con physics.pop-ph

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preprint2013arXiv

Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions

Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintronic devices, by using dynamical magnetoelectric and piezoresponse force microscopy measurement techniques. We show that the applied electric-field induces strain in a few atomic layers of dielectric MgO which is transferred to magnetostrictive CoFeB layer, resulting in a magnetoelectric effect of magnitude up to 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated strain-mediated magnetoelectric effect with an electric field in magnetic tunnel junctions is a significant step towards exploring magnetoelectrically controlled spintronic devices for low-power and high density magnetic data storage applications.

preprint2008arXiv

Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

preprint2006arXiv

Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. Using an atomic force microscope with specially designed software, a single non-magnetic Au nanodisc is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real-time while the Au disc is manipulated step-by-step with Angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disc. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few ns on the spin-relaxation time for electrons in the Au disc. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the SETs. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum TMR of 10%, from which we deduced a spin-polarization of about 22% in the Ni electrodes.

preprint2004arXiv

Effect of Sr-for-Ba isovalent substitution on the local structure, hole distribution and magnetic irreversibility of Cu(Ba,Sr)2YbCu2O6.95(2)

The effect of Sr(II)-for-Ba(II) isovalent substitution on the magnetic irreversibility field (Hirr) of Cu(Ba1-ySry)2YbCu2O6.95(2) (Cu-1212) sample series (y = 0 ~ 0.4) is studied to reveal guiding rules for tailoring the intrinsic Hirr characteristics of high-Tc superconductors. It has been assumed that substitution of the larger alkaline earth cation, Ba(II), by the smaller, Sr(II), might improve the Hirr characteristics as a consequence of the decrease in the thickness of nonsuperconductive blocking block (BB). However, results of the present work show that Sr substitution rather depresses the Hirr characteristics of the Cu-1212-phase superconductors even though the thickness of BB decreases. Both the amount of excess oxygen and the overall positive charge are confirmed to remain constant upon the Sr substitution by wet-chemical and XANES analyses, respectively. However, from neutron diffraction data analysis it is found that Sr substitution breaks the conductive CuO chains in BB by shifting part of the excess oxygen atoms from the characteristic b-axis lattice site to the a-axis site. This is believed to decrease the concentration of mobile holes in the BB, as supported by the results of TEP measurements. The lower Hirr(T) lines of the Sr-substituted samples may thus be attributed to the lower concentration of mobile holes in BB.