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Researcher profile

L. Samuelson

L. Samuelson contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.softcond-mat.stat-mechphysics.pop-ph

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Published work

14 published item(s)

preprint2015arXiv

Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-X-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clear enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

InAs nanowire transistors with multiple, independent wrap-gate segments

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Lineshape of the thermopower of quantum dots

Quantum dots are an important model system for thermoelectric phenomena, and may be used to enhance the thermal-to-electric energy conversion efficiency in functional materials. It is therefore important to obtain a detailed understanding of a quantum-dot's thermopower as a function of the Fermi energy. However, so far it has proven difficult to take effects of co-tunnelling into account in the interpretation of experimental data. Here we show that a single-electron tunnelling model, using knowledge of the dot's electrical conductance which in fact includes all-order co-tunneling effects, predicts the thermopower of quantum dots as a function of the relevant energy scales, in very good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mesoscopic Thermovoltage Measurement Design

Quantitative thermoelectric measurements in the mesoscopic regime require accurate knowledge of temperature, thermovoltage, and device energy scales. We consider the effect of a finite load resistance on thermovoltage measurements of InAs/InP heterostructure nanowires. Load resistance and ac attenuation distort the measured thermovoltage therefore complicating the evaluation of device performance. Understanding these effects improves experimental design and data interpretation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Signatures of Wigner Localization in Epitaxially Grown Nanowires

It was predicted by Wigner in 1934 that the electron gas will undergo a transition to a crystallized state when its density is very low. Whereas significant progress has been made towards the detection of electronic Wigner states, their clear and direct experimental verification still remains a challenge. Here we address signatures of Wigner molecule formation in the transport properties of InSb nanowire quantum dot systems, where a few electrons may form localized states depending on the size of the dot (i.e. the electron density). By a configuration interaction approach combined with an appropriate transport formalism, we are able to predict the transport properties of these systems, in excellent agreement with experimental data. We identify specific signatures of Wigner state formation, such as the strong suppression of the antiferromagnetic coupling, and are able to detect the onset of Wigner localization, both experimentally and theoretically, by studying different dot sizes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Correlation-induced conductance suppression at level degeneracy in a quantum dot

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Probing confined phonon modes by transport through a nanowire double quantum dot

Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used as an experimental probe of the confined phonon environment. The resulting discrete peak structure in the measurements is explained by theoretical modeling of the confined phonon mode spectrum, where the piezoelectric coupling is of crucial importance.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Measuring Temperature Gradients over Nanometer Length Scales

When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this technique by measuring the temperature difference across a 15 nm quantum dot embedded in a nanowire. This technique can be used when the dot's energy states are separated by many kT and will enable future quantitative investigations of electron-phonon interaction, nonlinear thermoelectric effects, and the effciency of thermoelectric energy conversion in quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires

The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Quantum-dot thermometry

We present a method for the measurement of a temperature differential across a single quantum dot that has transmission resonances that are separated in energy by much more than the thermal energy. We determine numerically that the method is accurate to within a few percent across a wide range of parameters. The proposed method measures the temperature of the electrons that enter the quantum dot and will be useful in experiments that aim to test theory which predicts quantum dots are highly-efficient thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. Using an atomic force microscope with specially designed software, a single non-magnetic Au nanodisc is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real-time while the Au disc is manipulated step-by-step with Angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disc. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few ns on the spin-relaxation time for electrons in the Au disc. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the SETs. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum TMR of 10%, from which we deduced a spin-polarization of about 22% in the Ni electrodes.

0 citations0 reviewsNo code linkedOpen access