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L. Michalak

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cond-mat.mes-hall cond-mat.other physics.pop-ph

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preprint2010arXiv

Theory of Tunneling Spectroscopy in a Mn$_{12}$ Single-Electron Transistor by Density-Functional Theory Methods

We consider tunneling transport through a Mn$_{12}$ molecular magnet using spin density functional theory. A tractable methodology for constructing many-body wavefunctions from Kohn-Sham orbitals allows for the determination of spin-dependent matrix elements for use in transport calculations. The tunneling conductance at finite bias is characterized by peaks representing transitions between spin multiplets, separated by an energy on the order of the magnetic anisotropy. The energy splitting of the spin multiplets and the spatial part of their many-body wave functions, describing the orbital degrees of freedom of the excess charge, strongly affect the electronic transport, and can lead to negative differential conductance.

preprint2008arXiv

Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

preprint2006arXiv

Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. Using an atomic force microscope with specially designed software, a single non-magnetic Au nanodisc is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real-time while the Au disc is manipulated step-by-step with Angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disc. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few ns on the spin-relaxation time for electrons in the Au disc. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the SETs. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum TMR of 10%, from which we deduced a spin-polarization of about 22% in the Ni electrodes.