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Researcher profile

H. Pettersson

H. Pettersson contributes to research discovery and scholarly infrastructure.

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hep-excond-mat.mtrl-scicond-mat.othernucl-exphysics.pop-ph

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Published work

6 published item(s)

preprint2015arXiv

Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-X-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clear enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Measurement of eta meson decays into lepton-antilepton pairs

A search for rare lepton decays of the eta meson was performed using the WASA detector at CELSIUS. Two candidates for double Dalitz decay eta->e+e-e+e- events are reported with a background of 1.3+/-0.2 events. This allows to set an upper limit to the branching ratio of 9.7E-5 (90% CL). The branching ratio for the decay eta->e+e-gamma is determined to (7.8+/-0.5 stat+/-0.8 syst)E-3. An upper limit (90% CL) for the branching ratio for the eta->e+e- decay is 2.7E-5 and a limit for the sum of the eta->mu+mu-mu+mu- and eta->pi+pi-mu+mu- decays is 3.6E-4.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

The pp -> pp pi pi pi reaction channels in the threshold region

The cross section for prompt neutral and charged three pion production in pp interactions was measured at excess energies in the range 160 - 217 MeV. That comprises the first measurement of the pp->pp pi0pi0pi0 reaction and the comparison with the pp->pp pi+pi-pi0 reaction, in a very direct way. The experiment was performed above the eta meson production threshold and the cross section normalization was obtained from a concurrent measurement of the reaction pp->pp eta with the eta decaying into 3 pions. Since the same final states are selected, the measurement has a low systematical error. The measured cross section ratio sigma(pp->pp pi+pi-pi0)/sigma(pp->pp pi0\pi0\pi0) is compared to predictions of dominance of different isobars in the intermediate state.

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preprint2006arXiv

Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au discs, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. Using an atomic force microscope with specially designed software, a single non-magnetic Au nanodisc is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real-time while the Au disc is manipulated step-by-step with Angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disc. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few ns on the spin-relaxation time for electrons in the Au disc. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the SETs. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum TMR of 10%, from which we deduced a spin-polarization of about 22% in the Ni electrodes.

0 citations0 reviewsNo code linkedOpen access