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R. Prasad

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Published work

21 published item(s)

preprint2022arXiv

Spin-down induced quark-hadron phase transition in cold isolated neutron stars

We have studied the spin-down induced phase transition in cold, isolated neutron stars in this work. After birth, as the star slows down, its central density rises and crosses the critical density of phase transition, and a quark core is seeded inside the star. Intermediate mass stars are more likely to have a quark seeding in their lifetime at birth. Smaller neutron stars do not have a quark core and remain neutron stars throughout their life, whereas in massive stars, a quark core exists at their center from birth. In intermediate and massive stars, the quark core grows further as the star slows down. The appearance of a quark core leads to a sudden change in the moment of inertia of the star in its evolutionary history, and it is also reflected in a sudden discontinuity in the braking index of the star (at the frequency where the quark core first seeds). The energy released during the phase transition process as the quark core is seeded can excite the f-mode oscillation in the star and is emitted in the form of the gravitational wave, which is in the range of detection with present operating detectors; however, future detectors will enable a more clean extraction of this signals. Also, neutrinos and bursts of gamma-rays can originate from phase transition events. The spin-down induced phase transition could be gradual or in the form of subsequent leaps producing persistent or multiple transient emissions.

preprint2021arXiv

Spatial profile of accelerated electrons from ponderomotive scattering in hydrogen cluster targets

We study the laser-driven acceleration of electrons from overdense hydrogen clusters to energies of up to 13 MeV in laser forward direction and several hundreds of keV in an outer ring-like structure. The use of cryogenic hydrogen allows for high repetition-rate operation and examination of the influence of source parameters like temperature and gas flow. The outer ring-like structure of accelerated electrons, originating from the interaction, that is robust against the change of laser and target parameters can be observed for low electron densities of ca. 3$\times$10$^{16}$ cm$^{-3}$. For higher electron densities, an additional central spot of electrons in the laser forward direction can be observed. Utilizing 3D-PIC simulations, it is revealed that both electron populations mainly stem from ponderomotive scattering.

preprint2020arXiv

Constraining Bianchi type V universe with recent H(z) and BAO observations in Brans-Dicke theory of gravitation

In this paper, we investigate a transitioning model of Bianchi type V universe in Brans-Dicke theory of gravitation. The derived model not only validates Mach's principle but also describes the present acceleration of the universe. In this paper, our aim is to constrain an exact Bianchi type V universe in Brans - Dicke gravity. For this sake, firstly we obtain an exact solution of field equations in modified gravity and secondly constrain the model parameters by bounding the model with recent $H(z)$ and Baryon acoustic oscillations (BAO) observational data. The current phase of accelerated expansion of the universe is also described by the contribution coming from cosmological constant screened scalar field with deceleration parameter showing a transition redshift of about $z_{t} = 0.79$. Some physical properties of the universe are also discussed.

preprint2016arXiv

Can the structure of amorphous indium gallium zinc oxide be described in terms of a few polyhedral motifs?

The coordination polyhedra around the cations are the building blocks of ionic solids. In context of amorphous InGaZn oxide (a-IGZO), even though the coordination polyhedra are irregularly arranged, it will be beneficial to identify them. In this work, we address the questions, (a) is it possible to classify all the polyhedra that occur in a-IGZO into only a few distinct groups? and (b) are these the same polyhedral motifs as those observed in the crystalline indium gallium zinc oxide (c-IGZO) or other related crystalline oxides of indium, gallium and zinc? Therefore, in this first principles based study, a large number (ten) of equivalent samples of a-IGZO were prepared by ab initio melt-and-quench molecular dynamics, so that several distinct samples of the amorphous landscape are obtained. The combination of all these structures thus obtained is a better representation of a real a-IGZO sample. For the ten samples containing 360 cations, we propose a simpler and more accurate method for determining the coordination number of each polyhedron, which was verified by charge density plots. Based on a method of comparing bond angles between metal and oxygen atoms, the identified polyhedra were matched to the polyhedral motifs present in the related crystalline systems, such as, InGaZnO4, In2O3, Ga2O3 and ZnO. We find, the a-IGZO primarily consists of the following polyhedra: a tetrahedron from space group 199 and an octahedron from space group 206 of In2O3; a tetrahedron from space group 12 and an octahedron from space group 167 of Ga2O3; a tetrahedron from space group 186 of ZnO; zinc and gallium trigonal bipyramids from c-IGZO; and one zinc 4-fold, one zinc 5-fold and one indium 5-fold coordination polyhedra that occur only in the amorphous phase. We are able to reduce the description of structure from 360 to 10 groups of polyhedra. The benefits of this identification could be enormous.

preprint2016arXiv

Electric-field tunable Dirac semimetal state in phosphorene thin films

We study the electric-field tunable electronic properties of phosphorene thin films, using the framework of density functional theory. We show that phosphorene thin films offer a versatile material platform to study two dimensional Dirac fermions on application of a transverse electric field. Increasing the strength of the transverse electric field beyond a certain critical value in phosphorene leads to the formation of two symmetry protected gapless Dirac fermions states with anisotropic energy dispersion. The spin-orbit coupling splits each of these Dirac state into two spin- polarized Dirac cones which are also protected by non-symmorphic crystal symmetries. Our study shows that the position as well as the carrier velocity of the spin polarized Dirac cone states can be controlled by the strength of the external electric field.

preprint2016arXiv

Role of surface termination in realizing well-isolated topological surface states within the bulk band gap in TlBiSe$_2$ and TlBiTe$_2$

Electronic structures associated with the flat (polar) Se/Te- or Tl-terminated surfaces of TlBiSe$_2$ and TlBiTe$_2$ are predicted to harbor not only Dirac cone states, but also trivial dangling bond states near the Fermi energy. However, the latter, trivial states have never been observed in photoemission measurements. In order to address this discrepancy, we have carried out {\it ab-initio} calculations for various surfaces of TlBiSe$_2$ and TlBiTe$_2$. A rough nonpolar surface with an equal number of Se/Te and Tl atoms in the surface atomic layer is found to destroy the trivial dangling bond states, leaving only the Dirac cone states in the bulk energy gap. The resulting energy dispersions of the Dirac states are in good accord with the corresponding experimental dispersions in TlBiSe$_2$ as well as TlBiTe$_2$. We also show that in the case of flat, Se terminated, high-index (221) and (112) surfaces of TlBiSe$_2$, the trivial surface states shift energetically below the Dirac node and become well-separated from the Dirac cone states.

preprint2016arXiv

Valence fuctuation and magnetic ordering in EuNi2(P1-xGex)2 single crystals

Unusual phases and phase transitions are seen at the magnetic-nonmagnetic boundary in Ce, Eu and Yb-based compounds. EuNi$_2$P$_{2}$ is a very unusual valence fluctuating Eu system, because at low temperatures the Eu valence stays close to 2.5 instead of approaching an integer value. Eu valence and thus the magnetic property in this system can be tuned by Ge substitution in P site as EuNi$_2$Ge$_{2}$ is known to exhibit antiferromagnetc (AFM) ordering of divalent Eu moments with $T_N$ = 30 K. We have grown EuNi$_2$(P$_{1-x}$Ge$_x$)$_2$ (0.0 $\leq$ $x$ $\leq$ 0.5) single crystals and studied their magnetic, thermodynamic and transport properties. Increasing Ge doping to $x >$ 0.4 results in a well-defined AFM ordered state with $T_N$ = 12 K for $x$ = 0.5. Moreover, the reduced value of magnetic entropy for $x$ = 0.5 at $T_N$ suggests the presence of valance fluctuation/ Kondo effect in this compound. Interestingly, the specific heat exhibits an enhanced Sommerfeld coefficient upon Ge doping. Subsequently, electronic structure calculations lead to a non-integral valence in EuNi$_2$P$_{2}$ but a stable divalent Eu state in EuNi$_2$Ge$_{2}$ which is in good agreement with experimental results.

preprint2014arXiv

Buffered spectrally-peaked proton beams in the relativistic-transparency regime

Spectrally-peaked proton beams ($E_{p}\approx 8$ MeV, $ΔE\approx 4$ MeV) have been observed from the interaction of an intense laser ($> 10^{19 }$ Wcm$^{-2}$) with ultrathin CH foils, as measured by spectrally-resolved full beam profiles. These beams are reproducibly generated for foil thicknesses (5-100 nm), and exhibit narrowing divergence with decreasing target thickness down to $\approx 8^\circ$ for 5 nm. Simulations demonstrate that the narrow energy spread feature is a result of buffered acceleration of protons. Due to their higher charge-to-mass ratio, the protons outrun a carbon plasma driven in the relativistic transparency regime.

preprint2014arXiv

Itinerant and local-moment magnetism in EuCr2As2 single crystals

We report on the crystal structure, physical properties, and electronic structure calculations for the ternary pnictide compound EuCr2As2. X-ray diffraction studies confirmed that EuCr2As2 crystalizes in the ThCr2Si2-type tetragonal structure (space group I4/mmm). The Eu ions are in a stable divalent state in this compound. Eu moments in EuCr2As2 order magnetically below Tm = 21 K. A sharp increase in the magnetic susceptibility below Tm and the positive value of the paramagnetic Curie temperature obtained from the Curie-Weiss fit suggest dominant ferromagnetic interactions. The heat capacity exhibits a sharp λ-shape anomaly at Tm, confirming the bulk nature of the magnetic transition. The extracted magnetic entropy at the magnetic transition temperature is consistent with the theoretical value Rln(2S+1) for S = 7/2 of the Eu2+ ion. The temperature dependence of the electrical resistivity \r{ho}(T) shows metallic behavior along with an anomaly at 21 K. In addition, we observe a reasonably large negative magneto-resistance (~ -24%) at lower temperature. Electronic structure calculations for EuCr2As2 reveal a moderately high density of states of Cr-3d orbitals at the Fermi energy, indicating that the nonmagnetic state of Cr is unstable against magnetic order. Our density functional calculations for EuCr2As2 predict a G-type AFM order in the Cr sublattice. The electronic structure calculations suggest a weak interlayer coupling of the Eu moments.

preprint2014arXiv

Topological phase transition and quantum spin Hall state in TlBiS$_2$

We have investigated the bulk and surface electronic structures and band topology of TlBiS$_2$ as a function of strain and electric field using \textit{ab-initio} calculations. In its pristine form, TlBiS$_2$ is a normal insulator, which does not support any non-trivial surface states. We show however that a compressive strain along the (111) direction induces a single band inversion with Z$_2$ = (1;000), resulting in a Dirac cone surface state with a large in-plane spin polarization. Our analysis shows that a critical point lies between the normal and topological phases where the dispersion of the 3D bulk Dirac cone at the $Γ$-point becomes nearly linear. The band gap in thin films of TlBiS$_2$ can be tuned through an out-of-the-plane electric field to realize a topological phase transition from a trivial insulator to a quantum spin Hall state. An effective $\mathbf{k \cdot p}$ model Hamiltonian is presented to simulate our first-principles results on TlBiS$_2$.

preprint2014arXiv

Ultrafast opacity in borosilicate glass induced by picosecond bursts of laser-driven ions

Direct investigation of ion-induced dynamics in matter on picosecond (ps, 10-12 s) timescales has been precluded to date by the relatively long nanosecond (ns, 10-9 s) scale ion pulses typically provided by radiofrequency accelerators1. By contrast, laser-driven ion accelerators provide bursts of ps duration2, but have yet to be applied to the study of ultrafast ion-induced transients in matter. We report on the evolution of an electron-hole plasma excited in borosilicate glass by such bursts. This is observed as an onset of opacity to synchronised optical probe radiation and is characterised by the 3.0 +/- 0.8 ps ion pump rise-time . The observed decay-time of 35 +/- 3 ps i.e. is in excellent agreement with modelling and reveals the rapidly evolving electron temperature (>10 3 K) and carrier number density (>10 17cm-3). This result demonstrates that ps laser accelerated ion bursts are directly applicable to investigating the ultrafast response of matter to ion interactions and, in particular, to ultrafast pulsed ion radiolysis of water3-5, the radiolytic decompositions of which underpin biological cell damage and hadrontherapy for cancer treatment6.

preprint2013arXiv

Evolution of ferromagnetic and spin-wave resonances with crystalline order in thin films of full-Heusler alloy Co2MnSi

We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$) increases from 400 to 600 $^0$C. The extent of \emph{L}$2_1$ ordering in the films annealed at 600 $^0$C is $\approx 96%$. The static magnetization measurements by vibrating sample magnetometry shows a maximum moment of 4.95 $μ_B$ per formula unit with low coercivity ($H_C$ $\approx$ 65 Oe) in the films annealed at 600 $^0$C. A rigorous analysis of the azimuthal and polar angle dependent ferromagnetic resonance (FMR) measured at several temperatures allows determination of various anisotropy fields relevant to our system as a function of $T_A$. Finally, we have evaluated the exchange stiffness constant down to 100 K using spin wave modes in FMR spectra. We have also estimated the exchange energies as well as stiffness constant by varying the lattice parameter \emph{ab-initio} using the Korringa-Kohn-Rostoker method.

preprint2013arXiv

Reentrant Superconductivity in Eu(Fe1-xIrx)2As2

The interplay between superconductivity and Eu$^{2+}$ magnetic ordering in Eu(Fe$_{1-x}$Ir$_{x}$)$_{2}$As$_{2}$ is studied by means of electrical transport and magnetic measurements. For the critically doped sample Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$, we witnessed two distinct transitions : a superconducting transition below 22.6 K which is followed by a resistivity reentrance caused by the ordering of the Eu$^{2+}$ moments. Further, the low field magnetization measurements show a prominent diamagnetic signal due to superconductivity which is remarkable in presence of a large moment magnetically ordered system. The electronic structure for a 12.5% Ir doped EuFe$_{1.75}$Ir$_{0.25}$As$_{2}$ is investigated along with the parent compound EuFe$_{2}$As$_{2}$. As compared to EuFe$_{2}$As$_{2}$, the doped compound has effectively lower value of density of states throughout the energy scale with more extended bandwidth and stronger hybridization involving Ir. Shifting of Fermi energy and change in band filling in EuFe$_{1.75}$Ir$_{0.25}$As$_{2}$ with respect to the pure compound indicate electron doping in the system.

preprint2013arXiv

Topological phase transition and two dimensional topological insulators in Ge-based thin films

We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk material is a topological insulator at $x$ = 1.0 with a single Dirac cone surface state at the surface Brillouin zone center, whereas it is a trivial insulator at $x$ = 0. Through a systematic examination of the band topologies we predict that thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ with $x$ = 0.6, 0.8 and 1.0 are candidates for two-dimensional (2D) topological insulators, which would undergo a 2D topological phase transition as a function of $x$. A topological phase diagram for Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ thin films is presented to help guide their experimental exploration.

preprint2013arXiv

Valence Fluctuation in CeMo2Si2C

We report on the valence fluctuation of Ce in CeMo$_{2}$Si$_{2}$C as studied by means of magnetic susceptibility $χ(T)$, specific heat $C(T)$, electrical resistivity $ρ(T)$ and x-ray absorption spectroscopy. Powder x-ray diffraction revealed that CeMo$_{2}$Si$_{2}$C crystallizes in CeCr$_{2}$Si$_{2}$C-type layered tetragonal crystal structure (space group \textit{P4/mmm}). The unit cell volume of CeMo$_{2}$Si$_{2}$C deviates from the expected lanthanide contraction, indicating non-trivalent state of Ce ions in this compound. The observed weak temperature dependence of the magnetic susceptibility and its low value indicate that Ce ions are in valence fluctuating state. The formal $L_{III}$ Ce valence in CeMo$_{2}$Si$_{2}$C $<$$\widetildeν$$>$ = 3.11 as determined from x-ray absorption spectroscopy measurement is well bellow the value $<$$\widetildeν$$> \simeq$ 3.4 in tetravalent Ce compound CeO$_{2}$. The temperature dependence of specific heat does not show any anomaly down to 1.8 K which rules out any magnetic ordering in the system. The Sommerfeld coefficient obtained from the specific heat data is $γ$ = 23.4 mJ/mol\,K$^{2}$. The electrical resistivity follows the $T{^2}$ behavior in the low temperature range below 35 K confirming a Fermi liquid behavior. Accordingly both the Kadowaki Wood ratio $A/γ^{2}$ and the Sommerfeld Wilson ratio $χ(0)/γ$ are in the range expected for Fermi-liquid systems. In order to get some information on the electronic states, we calculated the band structure within the density functional theory, eventhough this approach is not able to treat 4f electrons accurately. The non-$f$ electron states crossing the Fermi level have mostly Mo 4d character. They provide the states with which the 4f sates are strongly hybridized, leading to the intermediate valent state.

preprint2012arXiv

Ion acceleration in multispecies targets driven by intense laser radiation pressure

The acceleration of ions from ultra-thin foils has been investigated using 250 TW, sub-ps laser pulses, focused on target at intensities up to $3\times10^{20} \Wcm2$. The ion spectra show the appearance of narrow band features for proton and Carbon peaked at higher energy (in the 5-10 MeV/nucleon range) and with significantly higher flux than previously reported. The spectral features, and their scaling with laser and target parameters, provide evidence of a multispecies scenario of Radiation Pressure Acceleration in the Light Sail mode, as confirmed by analytical estimates and 2D Particle In Cell simulations. The scaling indicates that monoenergetic peaks with more than 100 MeV/nucleon energies are obtainable with moderate improvements of the target and laser characteristics, which are within reach of ongoing technical developments.

preprint2012arXiv

Topological electronic structure and Weyl semimetal in the TlBiSe$_2$ class of semiconductors

We present an analysis of bulk and surface electronic structures of thallium based ternary III-V-VI$_2$ series of compounds TlMQ$_2$, where M=Bi or Sb and Q=S, Se or Te, using the ab initio density functional theory framework. Based on parity analysis and (111) surface electronic structure, we predict TlSbSe$_2$, TlSbTe$_2$, TlBiSe$_2$ and TlBiTe$_2$ to be non-trivial topological insulators with a single Dirac cone at the $Γ$-point, and TlSbS$_2$ and TlBiS$_2$ to be trivial band insulators. Our predicted topological phases agree well with available angle-resolved photoemission spectroscopy (ARPES) measurements, in particular the topological phase changes between TlBiSe$_2$ and TlBiS$_2$. Moreover, we propose that Weyl semimetal can be realized at the topological critical point in TlBi(S$_{1-x}$Se$_x$)$_2$ and TlBi(S$_{1-x}$Te$_x$)$_2$ alloys by breaking the inversion symmetry in the layer by layer growth in the order of Tl-Se(Te)-Bi-S, yielding six Dirac cones centered along the $Γ-L$ directions in the bulk band structure.

preprint2011arXiv

Individual and Domain Adaptation in Sentence Planning for Dialogue

One of the biggest challenges in the development and deployment of spoken dialogue systems is the design of the spoken language generation module. This challenge arises from the need for the generator to adapt to many features of the dialogue domain, user population, and dialogue context. A promising approach is trainable generation, which uses general-purpose linguistic knowledge that is automatically adapted to the features of interest, such as the application domain, individual user, or user group. In this paper we present and evaluate a trainable sentence planner for providing restaurant information in the MATCH dialogue system. We show that trainable sentence planning can produce complex information presentations whose quality is comparable to the output of a template-based generator tuned to this domain. We also show that our method easily supports adapting the sentence planner to individuals, and that the individualized sentence planners generally perform better than models trained and tested on a population of individuals. Previous work has documented and utilized individual preferences for content selection, but to our knowledge, these results provide the first demonstration of individual preferences for sentence planning operations, affecting the content order, discourse structure and sentence structure of system responses. Finally, we evaluate the contribution of different feature sets, and show that, in our application, n-gram features often do as well as features based on higher-level linguistic representations.

preprint2010arXiv

Photo-absorption spectra of small hydrogenated silicon clusters using the time-dependent density functional theory

We present a systematic study of the photo-absorption spectra of various Si$_{n}$H$_{m}$ clusters (n=1-10, m=1-14) using the time-dependent density functional theory (TDDFT). The method uses a real-time, real-space implementation of TDDFT involving full propagation of the time dependent Kohn-Sham equations. Our results for SiH$_{4}$ and Si$_{2}$H$_{6}$ show good agreement with the earlier calculations and experimental data. We find that for small clusters (n<7) the photo-absorption spectrum is atomic-like while for the larger clusters it shows bulk-like behaviour. We study the photo-absorption spectra of silicon clusters as a function of hydrogenation. For single hydrogenation, we find that in general, the absorption optical gap decreases and as the number of silicon atoms increase the effect of a single hydrogen atom on the optical gap diminishes. For further hydrogenation the optical gap increases and for the fully hydrogenated clusters the optical gap is larger compared to corresponding pure silicon clusters.

preprint2009arXiv

Suppression of Jahn-Teller distortion by chromium and magnesium doping in spinel LiMn2O4: A first-principles study using GGA and GGA+U

The effect of doping spinel LiMn2O4 with chromium and magnesium has been studied using the first-principles spin density functional theory within GGA (generalized gradient approximation) and GGA+U. We find that GGA and GGA+U give different ground states for pristine LiMn2O4 and same ground state for doped systems. For LiMn2O4 the body centered tetragonal phase was found to be the ground state structure using GGA and face centered orthorhombic using GGA+U, while for LiM0.5Mn1.5O4 (M= Cr or Mg) it was base centered monoclinic and for LiMMnO4 (M= Cr or Mg) it was body centered orthorhombic in both GGA and GGA+U. We find that GGA predicts the pristine LiMn2O4 to be metallic while GGA+U predicts it to be the insulating which is in accordance with the experimental observations. For doped spinels, GGA predicts the ground state to be half metallic while GGA+U predicts it to be insulating or metallic depending on the doping concentration. GGA+U predicts insulator-metal-insulator transition as a function of doping in case of Cr and in case of Mg the ground state is found to go from insulating to a half metallic state as a function of doping. Analysis of the charge density and the density of states suggest a charge transfer from the dopants to the neighboring oxygen atoms and manganese atoms. We have calculated the Jahn-Teller active mode displacement Q3 for doped compounds using GGA and GGA+U. The bond lengths calculated from GGA+U are found to be in better agreement with the experimental bond lengths. Based on the bond lengths of metal and oxygen, we have also estimated the average oxidation states of the dopants.

preprint2006arXiv

Charge-induced effects on the structure and properties of silane and disilane derivatives

Using ab-initio electronic structure methods we have investigated the ground state structures and properties of neutral and charged SiH$_{m}$(m=1-4) and Si$_{2}$H$_{n}$(n=1-6) clusters which are produced in the plasma enhanced chemical vapor deposition process used in the preparation of hydrogenated amorphous silicon({\it{a}}-Si:H). Our results show that charging a neutral cluster distorts it and the distortion mainly occurs through the orientation of Si-H bond. We attribute structural changes in the charged clusters to electrostatic repulsion between the bonded and non-bonded electrons. We find that in addition to the usual Si-H bond, hydrogen atoms form Si-H-H and Si-H-Si bonds in some clusters. The vibrations of Si-H, Si-Si, Si-H-Si bond stretching modes show that the frequencies are shifted significantly upon charging. The frequency shifts in the charged clusters are consistent with their bond length variations. We discuss the fragmentation pathways of silane into binary products and the role of fragmented silane radicals in the cluster formation and {\it{a}}-Si:H film deposition process.