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Researcher profile

R. Gumeniuk

R. Gumeniuk contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conphysics.opticscond-mat.otherphysics.app-ph

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Published work

8 published item(s)

preprint2024arXiv

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Superconducting parameters of BaPt(4-x)Au(x)Ge12 filled skutterudite

We report on a study of the superconducting properties for a series of polycrystalline BaPt(4-x)Au(x)Ge12 filled skutterudite compounds for x = 0, 0.5, 0.75, and 1. Muon spin rotation (muSR) spectroscopy as well as magnetization, specific heat, and electrical resistivity measurements were performed. The magnetic penetration depth λ, the coherence length ξ, and the Ginzburg-Landau parameter κare evaluated. The temperature dependence of the superfluid density is well described by an s-wave superconducting gap and this classical scenario is supported by the field-independent λ. The gap-to-Tc ratio Δ/kTc increases with the Au content from 1.70 for x = 0 to 2.1(1) for x = 1. By combining muSR, magnetization, and specific heat data, we find that BaPt(4-x)Au(x)Ge12 compounds are in between the dirty and clean limits with mean free paths of the carriers l ~ ξ. Interestingly, resistivity data for BaPt4Ge12 indicate a much higher upper critical field, which is probably due to defects or impurities close to the surface of the crystallites.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charge-Doping driven Evolution of Magnetism and non-Fermi-Liquid Behavior in the Filled Skutterudite CePt4Ge12-xSbx

The filled-skutterudite compound CePt4Ge12 is situated close to the border between intermediate-valence of Ce and heavy-fermion behavior. Substitution of Ge by Sb drives the system into a strongly correlated and ultimately upon further increasing the Sb concentration into an antiferromagnetically ordered state. Our experiments evidence a delicate interplay of emerging Kondo physics and the formation of a local 4f moment. An extended non-Fermi-liquid region, which can be understood in the framework of a Kondo-disorder model, is observed. Band-structure calculations support the conclusion that the physical properties are governed by the interplay of electron supply via Sb substitution and the concomitant volume effects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ferromagnetism and superconductivity in P-doped CeFeAsO

We report on superconductivity in CeFeAs1-xPxO and the possible coexistence with Ce- ferromagnetism (FM) in a small homogeneity range around x = 30% with ordering temperatures of T_SC = T_C = 4K. The antiferromagnetic (AFM) ordering temperature of Fe at this critical concentration is suppressed to T^N_Fe ~ 40K and does not shift to lower temperatures with further increase of the P concentration. Therefore, a quantum-critical-point scenario with T^N_Fe -> 0K which is widely discussed for the iron based superconductors can be excluded for this alloy series. Surprisingly, thermal expansion and X-ray powder diffraction indicate the absence of an orthorhombic distortion despite clear evidence for short range AFM Fe-ordering from muon-spin-rotation measurements. Furthermore, we discovered the formation of a sharp electron spin resonance signal unambiguously connected with the emergence of FM ordering.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Multiband superconductivity in PrPt4Ge12 single crystals

We report measurements of the London penetration depth $Δλ(T)$ and the electronic specific heat $C_e(T)$ on high-quality single crystals of the filled-skutterudite superconductor PrPt$_4$Ge$_{12}$ ($T_c\simeq$8K). Both quantities show a weak temperature dependence at $T\ll T_c$, following $Δλ\sim T^n$ ($n\simeq 3.2$) and $C_e/T\sim T^{2.8}$. Such temperature dependences deviate from both conventional s-wave type and nodal superconductivity. A detailed analysis indicates that the superfluid density $ρ_s(T)$, derived from the penetration depth, as well as the electronic specific heat can be consistently described in terms of a two-gap model, providing strong evidence of multiband superconductivity for PrPt$_4$Ge$_{12}$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tuning the Eu valence in EuPd_3B_x: pressure versus valence electron count - a combined computational and experimental study

In a joint theoretical and experimental study we investigate the pressure dependence of the Eu valence in EuPd_3B_x (0 <= x <= 1). Density functional band structure calculations are combined with x-ray absorption and x-ray diffraction measurements under hydrostatic pressures up to 30 GPa. It is observed that the heterogenous mixed-valence state of Eu in EuPd_3B_x (x >= 0.2) can be suppressed partially in this pressure range. From the complementary measurements we conclude that the valence change in EuPd_3B_x is mainly driven by the number of additional valence electrons due to the insertion of boron, whereas the volume change is a secondary effect. A similar valence change of Eu in Eu_{1-x}La_xPd_3 is predicted for x >= 0.4, in line with the suggested electron count scenario.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic order in the filled skutterudites RPt4Ge12 (R = Nd, Eu)

Rare-earth metal filled skutterudites RPt4Ge12 with R=La-Nd, and Eu exhibit a variety of different ground states, e.g., conventional and unconventional superconductivity in LaPt4Ge12 and PrPt4Ge12, respectively, and intermediate valence behavior in CePt4Ge12. In this work we investigate the magnetic state of NdPt4Ge12 and EuPt4Ge12 by specific heat, dc-susceptibility and magnetization. NdPt4Ge12 shows two magnetic phase transitions at T_N1=0.67 K and T_N2=0.58 K, while EuPt4Ge12 displays a complex magnetic phase diagram below the magnetic ordering temperature of 1.78 K. The specific heat indicates that in NdPt4Ge12 the crystalline electric field (CEF) ground state of the Nd3+ is a quartet and that, as expected, in EuPt4Ge12 the Eu2+ state is fully degenerate.

0 citations0 reviewsNo code linkedOpen access