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R. Gumeniuk

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Published work

15 published item(s)

preprint2024arXiv

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

preprint2022arXiv

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

preprint2016arXiv

Optical Writing of Magnetic Properties by Remanent Photostriction

We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

preprint2015arXiv

Weak Interband-Coupling Superconductivity in the Filled Skutterudite LaPt4Ge12

The superconducting pairing state of LaPt$_{4}$Ge$_{12}$ is studied by measuring the magnetic penetration depth $λ(T,B)$ and the superfluid density $ρ_s(T)$ using a tunnel-diode-oscillator (TDO)-based method and by transverse field muon-spin rotation ($μ$SR) spectroscopy. $λ(T)$ follows an exponential-type temperature dependence at $T\ll T_{c}$, but its zero-temperature value $λ(0)$ increases linearly with magnetic field. Detailed analyses demonstrate that both $λ(T)$ and the corresponding $ρ_{s}(T)$, measured in the Meissner state by the TDO method are well described by a two-gap $γ$ model with gap sizes of $Δ_1(0)=1.31k_{B}T_c$ and $Δ_2(0)=1.80k_{B}T_c$ and a very weak interband coupling. In contrast, $ρ_s(T)$, derived from the $μ\rm{SR}$ data taken in a small field, can be fitted by a single-gap BCS model with a gap close to $Δ_2(0)$. We conclude that LaPt$_{4}$Ge$_{12}$ is a marginal two-gap superconductor and the small gap $Δ_1$ seems to be destroyed by a small magnetic field. In comparison, in PrPt$_4$Ge$_{12}$ the $4f$-electrons may enhance the interband coupling and, therefore, give rise to more robust multiband superconductivity.

preprint2013arXiv

Superconducting parameters of BaPt(4-x)Au(x)Ge12 filled skutterudite

We report on a study of the superconducting properties for a series of polycrystalline BaPt(4-x)Au(x)Ge12 filled skutterudite compounds for x = 0, 0.5, 0.75, and 1. Muon spin rotation (muSR) spectroscopy as well as magnetization, specific heat, and electrical resistivity measurements were performed. The magnetic penetration depth λ, the coherence length ξ, and the Ginzburg-Landau parameter κare evaluated. The temperature dependence of the superfluid density is well described by an s-wave superconducting gap and this classical scenario is supported by the field-independent λ. The gap-to-Tc ratio Δ/kTc increases with the Au content from 1.70 for x = 0 to 2.1(1) for x = 1. By combining muSR, magnetization, and specific heat data, we find that BaPt(4-x)Au(x)Ge12 compounds are in between the dirty and clean limits with mean free paths of the carriers l ~ ξ. Interestingly, resistivity data for BaPt4Ge12 indicate a much higher upper critical field, which is probably due to defects or impurities close to the surface of the crystallites.

preprint2013arXiv

Unconventional magnetism in multivalent charge-ordered YbPtGe$_2$ probed by $^{195}$Pt- and $^{171}$Yb-NMR

Detailed $^{195}$Pt- and $^{171}$Yb nuclear magnetic resonance (NMR) studies on the heterogeneous mixed valence system YbPtGe$_2$ are reported. The temperature dependence of the $^{195}$Pt-NMR shift $^{195}K(T)$ indicates the opening of an unusual magnetic gap below 200\,K. $^{195}K(T)$ was analyzed by a thermal activation model which yields an isotropic gap $Δ/k_B \approx 200$\,K. In contrast, the spin-lattice relaxation rate $^{195}$($1/T_1$) does not provide evidence for the gap. Therefore, an intermediate-valence picture is proposed while a Kondo-insulator scenario can be excluded. Moreover, $^{195}$($1/T_1$) follows a simple metallic behavior, similar to the reference compound YPtGe$_2$. A well resolved NMR line with small shift is assigned to divalent $^{171}$Yb. This finding supports the proposed model with two sub-sets of Yb species (di- and trivalent) located on the Yb2 and Yb1 site of the YbPtGe$_2$ lattice.

preprint2012arXiv

Charge-Doping driven Evolution of Magnetism and non-Fermi-Liquid Behavior in the Filled Skutterudite CePt4Ge12-xSbx

The filled-skutterudite compound CePt4Ge12 is situated close to the border between intermediate-valence of Ce and heavy-fermion behavior. Substitution of Ge by Sb drives the system into a strongly correlated and ultimately upon further increasing the Sb concentration into an antiferromagnetically ordered state. Our experiments evidence a delicate interplay of emerging Kondo physics and the formation of a local 4f moment. An extended non-Fermi-liquid region, which can be understood in the framework of a Kondo-disorder model, is observed. Band-structure calculations support the conclusion that the physical properties are governed by the interplay of electron supply via Sb substitution and the concomitant volume effects.

preprint2012arXiv

Ferromagnetism and superconductivity in P-doped CeFeAsO

We report on superconductivity in CeFeAs1-xPxO and the possible coexistence with Ce- ferromagnetism (FM) in a small homogeneity range around x = 30% with ordering temperatures of T_SC = T_C = 4K. The antiferromagnetic (AFM) ordering temperature of Fe at this critical concentration is suppressed to T^N_Fe ~ 40K and does not shift to lower temperatures with further increase of the P concentration. Therefore, a quantum-critical-point scenario with T^N_Fe -> 0K which is widely discussed for the iron based superconductors can be excluded for this alloy series. Surprisingly, thermal expansion and X-ray powder diffraction indicate the absence of an orthorhombic distortion despite clear evidence for short range AFM Fe-ordering from muon-spin-rotation measurements. Furthermore, we discovered the formation of a sharp electron spin resonance signal unambiguously connected with the emergence of FM ordering.

preprint2012arXiv

Multiband superconductivity in PrPt4Ge12 single crystals

We report measurements of the London penetration depth $Δλ(T)$ and the electronic specific heat $C_e(T)$ on high-quality single crystals of the filled-skutterudite superconductor PrPt$_4$Ge$_{12}$ ($T_c\simeq$8K). Both quantities show a weak temperature dependence at $T\ll T_c$, following $Δλ\sim T^n$ ($n\simeq 3.2$) and $C_e/T\sim T^{2.8}$. Such temperature dependences deviate from both conventional s-wave type and nodal superconductivity. A detailed analysis indicates that the superfluid density $ρ_s(T)$, derived from the penetration depth, as well as the electronic specific heat can be consistently described in terms of a two-gap model, providing strong evidence of multiband superconductivity for PrPt$_4$Ge$_{12}$.

preprint2012arXiv

Spin dynamics of S-state ions in the filled skutterudites La1-xRx$Pt4Ge12 (R= Gd, Eu)

A detailed study of the spin dynamics of the S-state ions Gd3+ and Eu2+ in the filled skutterudites La1-xRxPt4Ge12 (R= Gd, Eu) is reported. The spin dynamics is investigated directly by means of Gd3+ and Eu2+ electron spin resonance (ESR), performed at X-band (~ 9.4 GHz) and Q-band (~ 34 GHz) frequencies in the temperature intervals 8<T<300 K and 1.5<T<300 K respectively. The ESR parameters provide direct evidence for the vibrational behavior of the Gd3+ ions but not for the Eu2+ ions. These results are interpreted in the light of recent discussions about the spin relaxation in cage systems. In particular, the Gd3+ spin relaxation in La0.9Gd0.1Pt4Ge12 provide evidence for the existence of an extra phonon mode with an Einstein temperature (thetaE) ~ 24 K in this system. The work suggests that the so-called "rattling" modes have a general and important role that should be taken into account in the study of spin dynamics in cage systems.

preprint2012arXiv

Tuning the Eu valence in EuPd_3B_x: pressure versus valence electron count - a combined computational and experimental study

In a joint theoretical and experimental study we investigate the pressure dependence of the Eu valence in EuPd_3B_x (0 <= x <= 1). Density functional band structure calculations are combined with x-ray absorption and x-ray diffraction measurements under hydrostatic pressures up to 30 GPa. It is observed that the heterogenous mixed-valence state of Eu in EuPd_3B_x (x >= 0.2) can be suppressed partially in this pressure range. From the complementary measurements we conclude that the valence change in EuPd_3B_x is mainly driven by the number of additional valence electrons due to the insertion of boron, whereas the volume change is a secondary effect. A similar valence change of Eu in Eu_{1-x}La_xPd_3 is predicted for x >= 0.4, in line with the suggested electron count scenario.

preprint2010arXiv

Evidence for time-reversal symmetry breaking in superconducting PrPt4Ge12

Zero and longitudinal field muon spin rotation (muSR) experiments were performed on the superconductors PrPt4Ge12 and LaPt4Ge12. In PrPt4Ge12 below Tc a spontaneous magnetization with a temperature variation resembling that of the superfluid density appears. This observation implies time-reversal symmetry (TRS) breaking in PrPt4Ge12 below Tc = 7.9 K. This remarkably high Tc for an anomalous superconductor and the weak and gradual change of Tc and of the related specific heat anomaly upon La substitution in La_(1-x)Pr_xPt_4Ge_(12) suggests that the TRS breaking is due to orbital degrees of freedom of the Cooper pairs.

preprint2010arXiv

Magnetic order in the filled skutterudites RPt4Ge12 (R = Nd, Eu)

Rare-earth metal filled skutterudites RPt4Ge12 with R=La-Nd, and Eu exhibit a variety of different ground states, e.g., conventional and unconventional superconductivity in LaPt4Ge12 and PrPt4Ge12, respectively, and intermediate valence behavior in CePt4Ge12. In this work we investigate the magnetic state of NdPt4Ge12 and EuPt4Ge12 by specific heat, dc-susceptibility and magnetization. NdPt4Ge12 shows two magnetic phase transitions at T_N1=0.67 K and T_N2=0.58 K, while EuPt4Ge12 displays a complex magnetic phase diagram below the magnetic ordering temperature of 1.78 K. The specific heat indicates that in NdPt4Ge12 the crystalline electric field (CEF) ground state of the Nd3+ is a quartet and that, as expected, in EuPt4Ge12 the Eu2+ state is fully degenerate.

preprint2009arXiv

Electronic structure of SrPt_4Ge_{12}: a combined photoelectron spectroscopy and band structure study

We present a combined study of the electronic structure of the superconducting skutterudite derivative SrPt4Ge12 by means of X-ray photoelectron spectroscopy and full potential band structure calculations including an analysis of the chemical bonding. We establish that the states at the Fermi level originate predominantly from the Ge 4p electrons and that the Pt 5d shell is effectively full. We find excellent agreement between the measured and the calculated valence band spectra, thereby validating that band structure calculations in combination with photoelectron spectroscopy can provide a solid basis for the modeling of superconductivity in the compounds MPt4Ge12 (M = Sr, Ba, La, Pr) series.

preprint2009arXiv

Superfluid Density and Energy Gap-Function of Superconducting PrPt4Ge12

The filled skutterudite superconductor PrPt4Ge12 was studied in muon-spin rotation (muSR), specific heat, and electrical resistivity experiments. The continuous increase of the superfluid density with decreasing temperature and the dependence of the magnetic penetration depth λon the magnetic field obtained by means of muSR, as well as the observation of a T^3 dependence of the electronic specific heat establish the presence of point-like nodes in the superconducting energy gap. The energy gap was found to be well described by Δ=Δ_0| k_x - ik_y| or Δ= Δ_0(1 - k_y^4) functional forms, similar to that obtained for another skutterudite superconductor, PrOs4Sb12. The gap to T_c ratios were estimated to be Δ_0/k_BT_c = 2.68(5) and 2.29(5), respectively.