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R. Divan

R. Divan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conphysics.ins-detastro-ph.IMcond-mat.str-el

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Published work

9 published item(s)

preprint2019arXiv

Development of Transition-Edge Sensor X-ray Microcalorimeter Linear Array for Compton Scattering and Energy Dispersive Diffraction Imaging

We present a strip transition-edge sensor microcalorimeter linear array detector developed for energy dispersive X-ray diffraction imaging and Compton scattering applications. The prototype detector is an array of 20 transition-edge-sensors with absorbers in strip geometry arranged in a linear array. We discuss the fabrication steps needed to develop this array including Mo/Cu bilayer, Au electroplating, and proof-of-principle fabrication of long strips of SiNx membranes. We demonstrate minimal unwanted effect of strip geometry on X-ray pulse response, and show linear relationship of 1/pulse height and pulse decay times with absorber length. For the absorber lengths studied, preliminary measurements show energy resolutions of 40 eV to 180 eV near 17 keV. Furthermore, we show that the heat flow to the cold bath is nearly independent of the absorber area and depends on the SiNx membrane geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Performance of a low-parasitic frequency-domain multiplexing readout

Frequency-domain multiplexing is a readout technique for transition edge sensor bolometer arrays used on modern CMB experiments, including the SPT-3G receiver. Here, we present design details and performance measurements for a low-parasitic frequency-domain multiplexing readout. Reducing the parasitic impedance of the connections between cryogenic components provides a path to improving both the crosstalk and noise performance of the readout. Reduced crosstalk will in turn allow higher multiplexing factors. We have demonstrated a factor of two improvement in parasitic resistance compared to SPT-3G hardware. Reduced parasitics also permits operation of lower-resistance bolometers, which enables better optimization of R$_{\rm{bolo}}$ for improved readout noise performance. The prototype system exhibits noise performance comparable to SPT-3G readout hardware when operating SPT-3G detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhancing superconducting critical current by randomness

The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-density-of-pinning-sites (LDOPS), which mitigates the motion of vortices. This is confirmed by achieving even higher enhancement of the critical current through a conformally mapped random pinscape, where the distribution of the LDOPS is further enlarged. The demonstrated key role of LDOPS in enhancing superconducting critical currents gets at the heart of random versus commensurate pinning. Our findings highlight the importance of random pinscapes in enhancing the superconducting critical currents of applied superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Origin of the turn-on temperature behavior in WTe$_2$

A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that $ρ(T)$ curves with turn-on behavior in the newly discovered XMR material WTe$_2$ can be scaled as MR $\sim(H/ρ_0)^m$ with $m\approx 2$ and $ρ_0$ being the resistivity at zero-field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature $T^* \sim (H-H_c)^ν$ with $ν\approx 1/2$, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity $ρ^* \approx 2 ρ_0$ at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe$_2$. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$

Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is electronically 3D with a mass anisotropy as low as $2$, as revealed by the 3D scaling behavior of the resistance $R(H,θ)=R(\varepsilon_θH)$ with $\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}$, $θ$ being the magnetic field angle with respect to c-axis of the crystal and $γ$ being the mass anisotropy; (2) the mass anisotropy $γ$ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe$_2$, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhancing the Critical Current of a Superconducting Film in a Wide Range of Magnetic Fields with a Conformal Array of Nanoscale Holes

The maximum current (critical current) a type-II superconductor can transmit without energy loss is limited by the motion of the quantized magnetic flux penetrating into a superconductor. Introducing nanoscale holes into a superconducting film has been long pursued as a promising way to increase the critical current. So far the critical current enhancement was found to be mostly limited to low magnetic fields. Here we experimentally investigate the critical currents of superconducting films with a conformal array of nanoscale holes that have non-uniform density while preserving the local ordering. We find that the conformal array of nanoscle holes provides a more significant critical current enhancement at high magnetic fields. The better performance can be attributed to its arching effect that not only gives rise to the gradient in hole-density for pinning vortices with a wide range of densities but also prevent vortex channeling occurring in samples with a regular lattice of holes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Antiferromagnetic Domain Wall Engineering in Chromium Films

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90° spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low Temperature Thermal Transport in Partially Perforated Silicon Nitride Membranes

The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 micron thick and 6 mm^2 in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-linear vortex dynamics and transient effects in ferromagnetic disks

We report a time resolved imaging and micromagnetic simulation study of the relaxation dynamics of a magnetic vortex in the non-linear regime. We use time-resolved photoemission electron microscopy and micromagnetic calculations to examine the emergence of non-linear vortex dynamics in patterned Ni80Fe20 disks in the limit of long field pulses. We show for core shifts beyond ~20-25% of the disk radius, the initial motion is characterized by distortions of the vortex, a transient cross-tie wall state, and instabilities in the core polarization that influence the core trajectories.

0 citations0 reviewsNo code linkedOpen access