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Researcher profile

R. Divan

R. Divan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-detastro-ph.IMcond-mat.supr-con

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Published work

4 published item(s)

preprint2019arXiv

Development of Transition-Edge Sensor X-ray Microcalorimeter Linear Array for Compton Scattering and Energy Dispersive Diffraction Imaging

We present a strip transition-edge sensor microcalorimeter linear array detector developed for energy dispersive X-ray diffraction imaging and Compton scattering applications. The prototype detector is an array of 20 transition-edge-sensors with absorbers in strip geometry arranged in a linear array. We discuss the fabrication steps needed to develop this array including Mo/Cu bilayer, Au electroplating, and proof-of-principle fabrication of long strips of SiNx membranes. We demonstrate minimal unwanted effect of strip geometry on X-ray pulse response, and show linear relationship of 1/pulse height and pulse decay times with absorber length. For the absorber lengths studied, preliminary measurements show energy resolutions of 40 eV to 180 eV near 17 keV. Furthermore, we show that the heat flow to the cold bath is nearly independent of the absorber area and depends on the SiNx membrane geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Performance of a low-parasitic frequency-domain multiplexing readout

Frequency-domain multiplexing is a readout technique for transition edge sensor bolometer arrays used on modern CMB experiments, including the SPT-3G receiver. Here, we present design details and performance measurements for a low-parasitic frequency-domain multiplexing readout. Reducing the parasitic impedance of the connections between cryogenic components provides a path to improving both the crosstalk and noise performance of the readout. Reduced crosstalk will in turn allow higher multiplexing factors. We have demonstrated a factor of two improvement in parasitic resistance compared to SPT-3G hardware. Reduced parasitics also permits operation of lower-resistance bolometers, which enables better optimization of R$_{\rm{bolo}}$ for improved readout noise performance. The prototype system exhibits noise performance comparable to SPT-3G readout hardware when operating SPT-3G detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhancing the Critical Current of a Superconducting Film in a Wide Range of Magnetic Fields with a Conformal Array of Nanoscale Holes

The maximum current (critical current) a type-II superconductor can transmit without energy loss is limited by the motion of the quantized magnetic flux penetrating into a superconductor. Introducing nanoscale holes into a superconducting film has been long pursued as a promising way to increase the critical current. So far the critical current enhancement was found to be mostly limited to low magnetic fields. Here we experimentally investigate the critical currents of superconducting films with a conformal array of nanoscale holes that have non-uniform density while preserving the local ordering. We find that the conformal array of nanoscle holes provides a more significant critical current enhancement at high magnetic fields. The better performance can be attributed to its arching effect that not only gives rise to the gradient in hole-density for pinning vortices with a wide range of densities but also prevent vortex channeling occurring in samples with a regular lattice of holes.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low Temperature Thermal Transport in Partially Perforated Silicon Nitride Membranes

The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 micron thick and 6 mm^2 in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.

0 citations0 reviewsNo code linkedOpen access