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Paper detail

Antiferromagnetic Domain Wall Engineering in Chromium Films

We have engineered an antiferromagnetic domain wall by utilizing a magnetic frustration effect of a thin iron cap layer deposited on a chromium film. Through lithography and wet etching we selectively remove areas of the Fe cap layer to form a patterned ferromagnetic mask over the Cr film. Removing the Fe locally removes magnetic frustration in user-defined regions of the Cr film. We present x-ray microdiffraction microscopy results confirming the formation of a 90° spin-density wave propagation domain wall in Cr. This domain wall nucleates at the boundary defined by our Fe mask.

preprint2012arXivOpen access
J. M. LoganH. C. KimD. RosenmannZ. CaiR. DivanOleg G. ShpyrkoE. D. Isaacs
cond-mat.mes-hallcond-mat.str-el
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J. M. LoganH. C. KimD. RosenmannZ. CaiR. DivanOleg G. ShpyrkoE. D. Isaacs

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