Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe2_2

preprint2015arXivOpen access

Abstract

Extremely large magnetoresistance (XMR) was recently discovered in WTe2_2, triggering extensive research on this material regarding the XMR origin. Since WTe2_2 is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe2_2: (1) WTe2_2 is electronically 3D with a mass anisotropy as low as 22, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(εθH)R(H,θ)=R(\varepsilon_θH) with εθ=(cos⁡2θ+γ−2sin⁡2θ)1/2\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}, θθ being the magnetic field angle with respect to c-axis of the crystal and γγ being the mass anisotropy; (2) the mass anisotropy γγ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe2_2, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

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