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Qi Lu

Qi Lu contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2026arXiv

Quaternion optical computing chip for parallel high-dimensional data processing

Optical computing chips have emerged as a transformative computing technology due to their high computational density, low energy consumption, and compact footprint. While real- and complex-valued computing chips have been well developed, their fundamental limitations in representing high-dimensional data significantly constrain their applicability in modern signal processing. Quaternions enable direct operations on three- and four-dimensional data, powering high-dimensional processing in data analytics and artificial intelligence. Here we demonstrate a quaternion optical computing chip (QOCC) for the first time and benchmark its performance in several typical application scenarios: three-dimensional point cloud processing, RGB chromatic transformation, and quaternion convolutional neural network for color image recognition. The QOCC harnesses high parallelism of light by wavelength-division multiplexing, processing high-dimensional data simultaneously through multiple optical wavelength channels. Compared to the electronic computing counterpart, our QOCC achieves higher computational fidelity (root mean square error < 0.035) and substantially reduced computational load (2/3 lower). It paves the way towards next-generation optical computing, overcoming the limitations of traditional computing systems in high-dimensional data processing.

preprint2022arXiv

Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.

preprint2022arXiv

Multiple-Photon Resonance Enabled Quantum Interference in Emission Spectroscopy of N_2^+

Quantum interference occurs frequently in the interaction of laser radiation with materials, leading to a series of fascinating effects such as lasing without inversion, electromagnetically induced transparency, Fano resonance, etc. Such quantum interference effects are mostly enabled by single-photon resonance with transitions in the matter, regardless of how many optical frequencies are involved. Here, we demonstrate quantum interference driven by multiple photons in the emission spectroscopy of nitrogen ions that are resonantly pumped by ultrafast infrared laser pulses. In the spectral domain, Fano resonance is observed in the emission spectrum, where a laser-assisted dynamic Stark effect creates the continuum. In the time domain, the fast-evolving emission is measured, revealing the nature of free-induction decay (FID) arising from quantum radiation and molecular cooperativity. These findings clarify the mechanism of coherent emission of nitrogen ions pumped with MIR pump laser and are likely to be universal. The present work opens a route to explore the important role of quantum interference during the interaction of intense laser pulses with materials near multiple photon resonance.

preprint2021arXiv

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

preprint2018arXiv

Optical properties of metamorphic type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells grown on GaAs for the mid-infrared spectral range

We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al$_{y}$In$_{1-y}$As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths $> 3$ $μ$m. Photoluminescence (PL) measurements for QWs having Sb compositions up to $x = 10$\% demonstrate strong room temperature emission up to 3.4 $μ$m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8-band $\vec{k} \cdot \vec{p}$ Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Our results highlight the potential of type-I InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of mid-infrared light-emitting diodes.