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Dong Qian

Dong Qian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.mes-hallphysics.acc-phphysics.atm-clus

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Published work

28 published item(s)

preprint2026arXiv

Decoupled interband pairing in a bilayer iron-based superconductor evidenced by ultrahigh-resolution ARPES

We present direct experimental evidence of a weakly coupled multiband superconducting state in the bilayer iron-based superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = K, Cs) via ultrahigh-resolution angle-resolved photoemission spectroscopy (ARPES). Remarkably, the K-containing compound exhibits two distinct transition temperatures, corresponding to two separate sets of bilayer-split bands, as evidenced by temperature-dependent superconducting gap and spectral weight near the Fermi energy, while its Cs counterpart displays conventional single transition behavior. These experimental observations are well described by the weakly coupled two-band model of Eilenberger theory, which identifies suppressed interband pairing interactions between the bilayer-split bands as the key mechanism. By exploring quantum phenomena in the weak-coupling limit within a multiband system, our findings pave the way for engineering exotic superconductivity via band-selective pairing control.

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preprint2022arXiv

Anomalous contribution to the nematic electronic states from the structural transition in FeSe revealed by time- and angle-resolved photoemission spectroscopy

High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature dependent measurements, we conclude that there are two equilibrium electronic phase transitions (at approximately 90 and 120 K) above the superconducting transition temperature, and an anomalous contribution on the scale of 10 meV to the nematic states from the structural transition is experimentally determined. Our observations strongly suggest that the electronic phase transition at 120 K must be taken into account in the energy band development of FeSe, and, furthermore, the contribution of the structural transition plays an important role in the nematic phase of iron-based high-temperature superconductors.

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preprint2022arXiv

Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.

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preprint2022arXiv

Unusual band splitting and superconducting gap evolution with sulfur substitution in FeSe

High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisotropic superconducting gaps with resolution limited nodes were evidenced. We find that the larger superconducting gap on the outer hole band is reduced linearly to the nematic transition temperature while the gap on the inner hole is nearly S-substitution independent. Our observations strongly suggest that the superconducting gap increases with enhanced nematicity although the superconducting transition temperature is not only governed by the pairing strength, demonstrating strong constraints on theories in the FeSe family.

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preprint2021arXiv

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

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preprint2021arXiv

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).

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preprint2020arXiv

Achieving 50 femtosecond resolution in MeV ultrafast electron diffraction with a double bend achromat compressor

We propose and demonstrate a novel scheme to produce ultrashort and ultrastable MeV electron beam. In this scheme, the electron beam produced in a photocathode radio-frequency (rf) gun first expands under its own Coulomb force with which a positive energy chirp is imprinted in the beam longitudinal phase space. The beam is then sent through a double bend achromat with positive longitudinal dispersion where electrons at the bunch tail with lower energies follow shorter paths and thus catch up with the bunch head, leading to longitudinal bunch compression. We show that with optimized parameter sets, the whole beam path from the electron source to the compression point can be made isochronous such that the time of flight for the electron beam is immune to the fluctuations of rf amplitude. With a laser-driven THz deflector, the bunch length and arrival time jitter for a 20 fC beam after bunch compression are measured to be about 29 fs (FWHM) and 22 fs (FWHM), respectively. Such an ultrashort and ultrastable electron beam allows us to achieve 50 femtosecond (FWHM) resolution in MeV ultrafast electron diffraction where lattice oscillation at 2.6 THz corresponding to Bismuth A1g mode is clearly observed without correcting both the short-term timing jitter and long-term timing drift. Furthermore, oscillating weak diffuse scattering signal related to phonon coupling and decay is also clearly resolved thanks to the improved temporal resolution and increased electron flux. We expect that this technique will have a strong impact in emerging ultrashort electron beam based facilities and applications.

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preprint2020arXiv

Anisotropic transport and quantum oscillations in the quasi-one-dimensional TaNiTe5: Evidence for the nontrivial band topology

The past decade has witnessed the burgeoning discovery of a variety of topological states of matter with distinct nontrivial band topologies. Thus far, most of materials studied possess two-dimensional or three-dimensional electronic structures, with only a few exceptions that host quasi-one-dimensional (quasi-1D) topological electronic properties. Here we present the clear-cut evidence for Dirac fermions in the quasi-1D telluride TaNiTe5. We show that its transport behaviors are highly anisotropic and we observe nontrivial Berry phases via the quantum oscillation measurements. The nontrivial band topology is further corroborated by first-principles calculations. Our results may help to guide the future quest for topological states in this new family of quasi-1D ternary chalcogenides.

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preprint2020arXiv

Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviors quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better mechanical integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, e.g. as mechanical reinforcements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Non-Coulomb strong electron-hole binding in $Ta_2NiSe_5$ revealed by time- and angle-resolved photoemission spectroscopy

We reveal an ultrafast purely electronic phase transition in \TNS, which is a plausible excitonic insulator, after excited by an ultrafast infrared laser pulse. Specifically, the order parameter of the strong electron-hole binding shrinks with enhancing the pump pulse, and above a critical pump fluence, a photo-excited semimetallic state is experimentally identified with the absence of ultrafast structural transition. In addition, the bare valence and conduction bands and also the effective exciton binding energy in \TNS~are determined. These findings and detailed analysis suggest a bare nonequilibrium semimetallic phase in $Ta_2NiSe_5$ and the strong electron-hole binding cannot be exclusively driven by Coulomb interaction.

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preprint2019arXiv

Fermi-crossing Type-II Dirac fermions and topological surface states in NiTe2

Transition-metal dichalcogenides (TMDs) offer an ideal platform to experimentally realize Dirac fermions. However, typically these exotic quasiparticles are located far away from the Fermi level, limiting the contribution of Dirac-like carriers to the transport properties. Here we show that NiTe2 hosts both bulk Type-II Dirac points and topological surface states. The underlying mechanism is shared with other TMDs and based on the generic topological character of the Te p-orbital manifold. However, unique to NiTe2, a significant contribution of Ni d orbital states shifts the energy of the Type-II Dirac point close to the Fermi level. In addition, one of the topological surface states intersects the Fermi energy and exhibits a remarkably large spin splitting of 120 meV. Our results establish NiTe2 as an exciting candidate for next-generation spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of Majorana fermions with spin selective Andreev reflection in the vortex of topological superconductor

Majorana fermion (MF) whose antiparticle is itself has been predicted in condensed matter systems. Signatures of the MFs have been reported as zero energy modes in various systems. More definitive evidences are highly desired to verify the existence of the MF. Very recently, theory has predicted MFs to induce spin selective Andreev reflection (SSAR), a novel magnetic property which can be used to detect the MFs. Here we report the first observation of the SSAR from MFs inside vortices in Bi2Te3/NbSe2 hetero-structure, in which topological superconductivity was previously established. By using spin-polarized scanning tunneling microscopy/spectroscopy (STM/STS), we show that the zero-bias peak of the tunneling differential conductance at the vortex center is substantially higher when the tip polarization and the external magnetic field are parallel than anti-parallel to each other. Such strong spin dependence of the tunneling is absent away from the vortex center, or in a conventional superconductor. The observed spin dependent tunneling effect is a direct evidence for the SSAR from MFs, fully consistent with theoretical analyses. Our work provides definitive evidences of MFs and will stimulate the MFs research on their novel physical properties, hence a step towards their statistics and application in quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor

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preprint2015arXiv

Epitaxial Growth of Two-Dimensional Stanene

Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth1,2. Ge-based germanene was realized by mechanical exfoliation3. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations4, or can support enhanced thermoelectric performance5, topological superconductivity6 and the near-room-temperature quantum anomalous Hall (QAH) effect7. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene.

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preprint2015arXiv

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the $\bar{M}$ point besides the two well-known surface bands on the Bi(111) surface. With this new surface band, the bulk valence band and the bulk conduction band of Bi can be connected by the surface states. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided a direct experimental signature that Bi(111) thin films of a certain thickness on the Bi$_2$Te$_3$(111) substrate can be topologically nontrivial in three dimension.

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preprint2014arXiv

Electronic Structures of Black Phosphorus Studied by Angle-resolved Photoemission Spectroscopy

Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.

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preprint2014arXiv

Fully Gapped s-wave-like Superconducting State and Electronic Structures in the Ir0.95Pd0.05Te2 Single Crystals with Strong Spin-orbital Coupling

Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting gap size, critical fields and coherence length along different directions were experimentally determined. Macroscopic bulk measurements and microscopic low temperature scanning tunneling spectroscopy results suggest that Ir0.95Pd0.05Te2 possesses a BCS-like s-wave state. No sign of zero bias conductance peak were found in the vortex core at 0.4K.

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preprint2014arXiv

Orbit- and Atom-Resolved Spin Textures of Intrinsic, Extrinsic and Hybridized Dirac Cone States

Combining first-principles calculations and spin- and angle-resolved photoemission spectroscopy measurements, we identify the helical spin textures for three different Dirac cone states in the interfaced systems of a 2D topological insulator (TI) of Bi(111) bilayer and a 3D TI Bi2Se3 or Bi2Te3. The spin texture is found to be the same for the intrinsic Dirac cone of Bi2Se3 or Bi2Te3 surface state, the extrinsic Dirac cone of Bi bilayer state induced by Rashba effect, and the hybridized Dirac cone between the former two states. Further orbit- and atom-resolved analysis shows that s and pz orbits have a clockwise (counterclockwise) spin rotation tangent to the iso-energy contour of upper (lower) Dirac cone, while px and py orbits have an additional radial spin component. The Dirac cone states may reside on different atomic layers, but have the same spin texture. Our results suggest that the unique spin texture of Dirac cone states is a signature property of spin-orbit coupling, independent of topology.

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preprint2014arXiv

Superconductivity in single-layer films of FeSe with a transition temperature above 100 K

Recently, interface has been employed to enhance superconductivity in the single-layer FeSe films grown on SrTiO3(001)(STO) with a possible Tc of ~ 80 K, which is nearly ten times of the Tc of bulk FeSe and is above the Tc record of 56 K for the bulk Fe-based superconductors. This work together with those on superconducting oxides interfaces revives the long-standing idea that electron pairing at a two-dimensional (2D) interface between two different materials is a potential path to high transition temperature (Tc) superconductivity. Subsequent angle-resolved photoemission spectroscopy (ARPES) measurements revealed different electronic structure from those of bulk FeSe with a superconducting-like energy gap closing at around 65K. However, previous ex situ electrical transport measurements could only detect the zero-resistance below ~30 K. Here we report the observation of high Tc superconductivity in the FeSe/STO system. By in situ 4-point probe (4PP) electrical transport measurement that can be conducted at an arbitrary position of the FeSe film on STO, we detected superconductivity above 100 K. Our finding makes FeSe/STO the exciting and ideal research platform for higher Tc superconductivity.

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preprint2013arXiv

Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$μ$B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.

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preprint2013arXiv

Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions

Topological insulators (TIs) are a unique class of materials characterized by a surface (edge) Dirac cone state of helical Dirac fermions in the middle of bulk (surface) gap. When the thickness (width) of TIs is reduced, however, interaction between the surface (edge) states will open a gap removing the Dirac cone. Using density function theory calculation, we demonstrate the creation of helical Dirac fermions from interfacing two gapped TI films, a single bilayer Bi grown on a single quintuple layer Bi2Se3 or Bi2Te3. The theoretical prediction is directly confirmed by experiment. We further show that the extrinsic helical Dirac fermions consists of predominantly Bi bilayer states, which are created by a giant Rashba effect due to interfacial charge transfer. Our findings provide a promising new method to create novel TI materials by interface engineering.

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preprint2013arXiv

Majorana mode in vortex core of Bi2Te3/NbSe2 topological insulator-superconductor heterostructure

Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we overcome the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi2Te3/NbSe2. While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ~20nm away from the vortex center in Bi2Te3/NbSe2, primarily due to the Majorana fermion zero mode. While the Majorana mode is destroyed by reducing the distance between vortices, the zero bias peak splits as a conventional superconductor again. This work provides strong evidences of Majorana fermions and also suggests a possible route to manipulating them.

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preprint2013arXiv

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

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preprint2013arXiv

Topological Superconductor Bi2Te3/NbSe2 heterostructures

Topological superconductors (TSCs) have a full gap in the bulk and gapless surface states consisting of Majorana fermions, which have potential applications in fault-tolerant topological quantum computation. Because TSCs are very rare in nature, an alternative way to study the TSC is to artificially introduce superconductivity into the surface states of a topological insulator (TI) through proximity effect (PE)1-4. Here we report the first experimental realization of the PE induced TSC in Bi2Te3/NbSe2 thin films as demonstrated by the density of states probed using scanning tunneling microscope. We observe Abrikosov vortices and lower energy bound states on the surface of topological insulator and the dependence of superconducting coherence length on the film thickness and magnetic field, which are attributed to the superconductivity in the topological surface states. This work demonstrates the practical feasibility of fabricating a TSC with individual Majorana fermions inside superconducting vortex as predicted in theory and accomplishes the pre-requisite step towards searching for Majorana fermions in the PE induced TSCs.

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preprint2011arXiv

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

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preprint2011arXiv

Observation of topological order in a Superconducting doped topological insulator (based on the Bi2Se3 class)

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum spin-Hall-like systems, the three dimensional (3D) topological insulators can host magnetism and superconductivity which has generated widespread research activity in condensed-matter and materials-physics communities. Thus there is an explosion of interest in understanding the rich interplay between topological and the broken-symmetry states (such as superconductivity), greatly spurred by proposals that superconductivity introduced into certain band structures will host exotic quasiparticles which are of interest in quantum information science. The observations of superconductivity in doped Bi_2Se_3 (Cu$_x$Bi$_2$Se$_3$) and doped Bi_2Te_3 (Pd$_x$-Bi$_2$Te$_3$ T$_c$ $\sim$ 5K) have raised many intriguing questions about the spin-orbit physics of these ternary complexes while any rigorous theory of superconductivity remains elusive. Here we present key measurements of electron dynamics in systematically tunable normal state of Cu$_x$Bi$_2$Se$_3$ (x=0 to 12%) gaining insights into its spin-orbit behavior and the topological nature of the surface where superconductivity takes place at low temperatures. Our data reveal that superconductivity occurs (in sample compositions) with electrons in a bulk relativistic kinematic regime and we identify that an unconventional doping mechanism causes the topological surface character of the undoped compound to be preserved at the Fermi level of the superconducting compound, where Cooper pairing occurs at low temperatures. These experimental observations provide important clues for developing a theory of topological-superconductivity in 3D topological insulators.

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preprint2011arXiv

Spin-orbital groundstates of Superconducting doped topological insulators (A Majorana Platform)

The Bi$_2$Se$_3$ class of topological insulators has recently been shown to undergo a superconducting transition upon hole or electron doping (Cu$_x$-Bi$_2$Se$_3$ with T$_C$=3.8$^o$K and Pd$_x$-Bi$_2$Te$_3$ with T$_C$=5$^o$K), raising the possibilities that these are the first known "topological superconductors" or realizes a superconducting state that can be potentially used as Majorana platforms (L.A. Wray \textit{et.al.}, Nature Phys. \textbf{6}, 855-859 (2010)). We use angle resolved photoemission spectroscopy to examine the full details of the spin-orbital groundstates of these materials including Bi$_2$Te$_3$, observing that the spin-momentum locked topological surface states remain well defined and non-degenerate with respect to bulk electronic states at the Fermi level in the optimally doped superconductor and obtaining their experimental Fermi energies. The implications of this unconventional surface (that undergoes superconducting at lower temperatures) topology are discussed, and we also explore the possibility of realizing the same topology in superconducting variants of Bi$_2$Te$_3$ (with T$_C$ $\sim$ 5$^o$K). Characteristics of the experimentally measured three dimensional bulk states are examined in detail for these materials with respect to the superconducting state and topological properties, showing that a single Majorana fermion zero mode is expected to be bound at each superconducting vortex on the surface. Systematic measurements also reveal intriguing renormalization and charge correlation instabilities of the surface-localized electronic modes.

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