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Dong Qian

Dong Qian contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2026arXiv

Decoupled interband pairing in a bilayer iron-based superconductor evidenced by ultrahigh-resolution ARPES

We present direct experimental evidence of a weakly coupled multiband superconducting state in the bilayer iron-based superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = K, Cs) via ultrahigh-resolution angle-resolved photoemission spectroscopy (ARPES). Remarkably, the K-containing compound exhibits two distinct transition temperatures, corresponding to two separate sets of bilayer-split bands, as evidenced by temperature-dependent superconducting gap and spectral weight near the Fermi energy, while its Cs counterpart displays conventional single transition behavior. These experimental observations are well described by the weakly coupled two-band model of Eilenberger theory, which identifies suppressed interband pairing interactions between the bilayer-split bands as the key mechanism. By exploring quantum phenomena in the weak-coupling limit within a multiband system, our findings pave the way for engineering exotic superconductivity via band-selective pairing control.

preprint2022arXiv

Anomalous contribution to the nematic electronic states from the structural transition in FeSe revealed by time- and angle-resolved photoemission spectroscopy

High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature dependent measurements, we conclude that there are two equilibrium electronic phase transitions (at approximately 90 and 120 K) above the superconducting transition temperature, and an anomalous contribution on the scale of 10 meV to the nematic states from the structural transition is experimentally determined. Our observations strongly suggest that the electronic phase transition at 120 K must be taken into account in the energy band development of FeSe, and, furthermore, the contribution of the structural transition plays an important role in the nematic phase of iron-based high-temperature superconductors.

preprint2022arXiv

Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films

Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.

preprint2022arXiv

Unusual band splitting and superconducting gap evolution with sulfur substitution in FeSe

High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisotropic superconducting gaps with resolution limited nodes were evidenced. We find that the larger superconducting gap on the outer hole band is reduced linearly to the nematic transition temperature while the gap on the inner hole is nearly S-substitution independent. Our observations strongly suggest that the superconducting gap increases with enhanced nematicity although the superconducting transition temperature is not only governed by the pairing strength, demonstrating strong constraints on theories in the FeSe family.

preprint2021arXiv

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

preprint2021arXiv

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).

preprint2020arXiv

Achieving 50 femtosecond resolution in MeV ultrafast electron diffraction with a double bend achromat compressor

We propose and demonstrate a novel scheme to produce ultrashort and ultrastable MeV electron beam. In this scheme, the electron beam produced in a photocathode radio-frequency (rf) gun first expands under its own Coulomb force with which a positive energy chirp is imprinted in the beam longitudinal phase space. The beam is then sent through a double bend achromat with positive longitudinal dispersion where electrons at the bunch tail with lower energies follow shorter paths and thus catch up with the bunch head, leading to longitudinal bunch compression. We show that with optimized parameter sets, the whole beam path from the electron source to the compression point can be made isochronous such that the time of flight for the electron beam is immune to the fluctuations of rf amplitude. With a laser-driven THz deflector, the bunch length and arrival time jitter for a 20 fC beam after bunch compression are measured to be about 29 fs (FWHM) and 22 fs (FWHM), respectively. Such an ultrashort and ultrastable electron beam allows us to achieve 50 femtosecond (FWHM) resolution in MeV ultrafast electron diffraction where lattice oscillation at 2.6 THz corresponding to Bismuth A1g mode is clearly observed without correcting both the short-term timing jitter and long-term timing drift. Furthermore, oscillating weak diffuse scattering signal related to phonon coupling and decay is also clearly resolved thanks to the improved temporal resolution and increased electron flux. We expect that this technique will have a strong impact in emerging ultrashort electron beam based facilities and applications.

preprint2020arXiv

Anisotropic transport and quantum oscillations in the quasi-one-dimensional TaNiTe5: Evidence for the nontrivial band topology

The past decade has witnessed the burgeoning discovery of a variety of topological states of matter with distinct nontrivial band topologies. Thus far, most of materials studied possess two-dimensional or three-dimensional electronic structures, with only a few exceptions that host quasi-one-dimensional (quasi-1D) topological electronic properties. Here we present the clear-cut evidence for Dirac fermions in the quasi-1D telluride TaNiTe5. We show that its transport behaviors are highly anisotropic and we observe nontrivial Berry phases via the quantum oscillation measurements. The nontrivial band topology is further corroborated by first-principles calculations. Our results may help to guide the future quest for topological states in this new family of quasi-1D ternary chalcogenides.

preprint2020arXiv

Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions

Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviors quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better mechanical integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, e.g. as mechanical reinforcements.

preprint2020arXiv

Non-Coulomb strong electron-hole binding in $Ta_2NiSe_5$ revealed by time- and angle-resolved photoemission spectroscopy

We reveal an ultrafast purely electronic phase transition in \TNS, which is a plausible excitonic insulator, after excited by an ultrafast infrared laser pulse. Specifically, the order parameter of the strong electron-hole binding shrinks with enhancing the pump pulse, and above a critical pump fluence, a photo-excited semimetallic state is experimentally identified with the absence of ultrafast structural transition. In addition, the bare valence and conduction bands and also the effective exciton binding energy in \TNS~are determined. These findings and detailed analysis suggest a bare nonequilibrium semimetallic phase in $Ta_2NiSe_5$ and the strong electron-hole binding cannot be exclusively driven by Coulomb interaction.

preprint2019arXiv

Fermi-crossing Type-II Dirac fermions and topological surface states in NiTe2

Transition-metal dichalcogenides (TMDs) offer an ideal platform to experimentally realize Dirac fermions. However, typically these exotic quasiparticles are located far away from the Fermi level, limiting the contribution of Dirac-like carriers to the transport properties. Here we show that NiTe2 hosts both bulk Type-II Dirac points and topological surface states. The underlying mechanism is shared with other TMDs and based on the generic topological character of the Te p-orbital manifold. However, unique to NiTe2, a significant contribution of Ni d orbital states shifts the energy of the Type-II Dirac point close to the Fermi level. In addition, one of the topological surface states intersects the Fermi energy and exhibits a remarkably large spin splitting of 120 meV. Our results establish NiTe2 as an exciting candidate for next-generation spintronics devices.