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Philip Hofmann

Philip Hofmann appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.quant-gasDigital Librariesphysics.app-phphysics.soc-ph

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Published work

47 published item(s)

preprint2022arXiv

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Single-crystal graphene on Ir(110)

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).

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preprint2020arXiv

Decoupling Molybdenum Disulfide from its Substrate by Cesium Intercalation

Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address the case of a single-layer of molybdenum disulfide (MoS$_2$), deposited on a gold substrate, and intercalated with cesium (Cs) in ultra-clean conditions (ultrahigh vacuum). We show that intercalation decouples MoS$_2$ from its substrate. We reveal electron transfer from Cs to MoS$_2$, relative changes in the energy of the valence band maxima, and electronic disorder induced by structural disorder in the intercalated Cs layer. Besides, we find an abnormal lattice expansion of MoS$_2$, which we relate to immediate vicinity of Cs. Intercalation is thermally activated, and so is the reverse process of de-intercalation. Our work opens the route to a microscopic understanding of a process of relevance in several possible future technologies, and shows a way to manipulate the properties of two-dimensional dichalcogenides by "under-cover" functionalization.

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preprint2020arXiv

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations.

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preprint2020arXiv

Observation of an excitonic Mott transition through ultrafast core-$\textit{cum}$-conduction photoemission spectroscopy

Time-resolved soft-X-ray photoemission spectroscopy is used to simultaneously measure the ultrafast dynamics of core-level spectral functions and excited states upon excitation of excitons in WSe$_2$. We present a many-body approximation for the Green's function, which excellently describes the transient core-hole spectral function. The relative dynamics of excited-state signal and core levels reveals a delayed core-hole renormalization due to screening by excited quasi-free carriers, revealing an excitonic Mott transition. These findings establish time-resolved core-level photoelectron spectroscopy as a sensitive probe of subtle electronic many-body interactions and an ultrafast electronic phase transition.

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preprint2019arXiv

Crediting multi-authored papers to single authors

A fair assignment of credit for multi-authored publications is a long-standing issue in scientometrics. In the calculation of the $h$-index, for instance, all co-authors receive equal credit for a given publication, independent of a given author's contribution to the work or of the total number of co-authors. Several attempts have been made to distribute the credit in a more appropriate manner. In a recent paper, Hirsch has suggested a new way of credit assignment that is fundamentally different from the previous ones: All credit for a multi-author paper goes to a single author, the called ``$α$-author'', defined as the person with the highest current $h$-index not the highest $h$-index at the time of the paper's publication) (J. E. Hirsch, Scientometrics 118, 673 (2019)). The collection of papers this author has received credit for as $α$-author is then used to calculate a new index, $h_α$, following the same recipe as for the usual $h$ index. The objective of this new assignment is not a fairer distribution of credit, but rather the determination of an altogether different property, the degree of a person's scientific leadership. We show that given the complex time dependence of $h$ for individual scientists, the approach of using the current $h$ value instead of the historic one is problematic, and we argue that it would be feasible to determine the $α$-author at the time of the paper's publication instead. On the other hand, there are other practical considerations that make the calculation of the proposed $h_α$ very difficult. As an alternative, we explore other ways of crediting papers to a single author in order to test early career achievement or scientific leadership.

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preprint2019arXiv

Observation and origin of the $Δ$-manifold in Si:P $δ$-layers

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $Δ$-manifold is revealed. Moreover, the number of carriers hosted within the $Δ$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

THz Surface Modes and Electron-Phonon Coupling in Bi$_2$Se$_3$(111)

We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator (TI) Bi$_2$Se$_3$ with particular emphasis on the low-energy region below 10 meV that has been difficult to resolve experimentally. By applying inelastic helium atom scattering (HAS), the entire phonon dispersion was determined and compared with density functional perturbation theory (DFPT) calculations. The intensity of the phonon modes is dominated by a strong Rayleigh mode, in contrast to previous experimental works. Moreover, also at variance with recent reports, no Kohn-anomaly is observed. These observations are in excellent agreement with DFPT calculations. Besides these results, the experimental data reveal$-$via bound-state resonance enhancement$-$two additional dispersion curves in the gap below the Rayleigh mode. They are possibly associated with an excitation of a surface electron density superstructure that we observe in HAS diffraction patterns. The electron-phonon coupling paramenter $λ$ = 0.23 derived from our temperature dependent Debye-Waller measurements compares well with values determined by angular resolved photoemission or Landau level spectroscopy. Our work opens up a new perspective for THz measurements on 2D materials as well as the investigation of subtle details (band bending, the presence of quantum well states) with respect to the electron-phonon coupling.

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preprint2019arXiv

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in ($k_x$, $k_y$, $E$) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å $^{-1}$ diameter in a binding-energy range of several eV, resolving about $2.5\times10^5$ data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe$_2$.

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preprint2018arXiv

Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates

We demonstrate how hybridization between a two-dimensional material and its substrate can lead to an apparent heavy doping, using the example of monolayer TaS$_2$ grown on Au(111). Combining $\textit{ab-initio}$ calculations, scanning tunneling spectroscopy experiments and a generic model, we show that strong changes in Fermi areas can arise with much smaller actual charge transfer. This mechanism, which we refer to as pseudodoping, is a generic effect for metallic two-dimensional materials which are either adsorbed to metallic substrates or embedded in vertical heterostructures. It explains the apparent heavy doping of TaS$_2$ on Au(111) observed in photoemission spectroscopy and spectroscopic signatures in scanning tunneling spectroscopy. Pseudodoping is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS$_2$ monolayer on Au(111). The influence of pseudodoping on the formation of charge ordered, magnetic, or superconducting states is analyzed.

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preprint2016arXiv

Band gap engineering by Bi intercalation of graphene on Ir(111)

We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a dislocation network upon Bi intercalation, which we attribute to a $\sqrt{3}\times\sqrt{3}R30°$ Bi structure on the underlying Ir(111) surface. Ab-initio calculations show that this Bi structure is the most energetically favorable, and also illustrate that STM measurements are most sensitive to C atoms in close proximity to intercalated Bi atoms. Additionally, Bi intercalation induces a band gap ($E_g=0.42\,$eV) at the Dirac point of graphene and an overall n-doping ($\sim 0.39\,$eV), as seen in angular-resolved photoemission spectroscopy. We attribute the emergence of the band gap to the dislocation network which forms favorably along certain parts of the moiré structure induced by the graphene/Ir(111) interface.

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preprint2016arXiv

Crystalline and electronic structure of single-layer TaS$_2$

Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.

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preprint2016arXiv

Manifestation of nonlocal electron-electron interaction in graphene

Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $π$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the bottom of the band moves less than the Dirac point. We show that the observed shift cannot be accounted for by band structure calculations in the local density approximation but that non-local exchange interactions must be taken into account.

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preprint2016arXiv

Reconstruction-induced trefoil knot Fermi contour of Au(111)

Using angle-resolved photoemission spectroscopy (ARPES), we study the effect of the so-called herringbone reconstruction of Au(111) on the dispersion of the free electron-like surface state. While earlier ARPES investigations have only reported a minor interplay of the surface state dispersion and the underlying reconstruction, we show that the uniaxial lattice distortion and the thereby changed reciprocal lattice for the first atomic layer leads to distinct surface state dispersions around the first order reciprocal lattice points of the three domains, creating a constant energy surface resembling a trefoil knot. The findings resolve the long-standing discrepancy between, on one hand, the reconstruction-induced surface state modifications reported in scanning tunnelling microscopy and first principle calculations and, on the other hand, their conspicuous absence in photoemission.

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preprint2016arXiv

Reorientation of the bicollinear antiferromagnetic structure at the surface of Fe$_{1+y}$Te bulk and thin films

Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the complex physics in these materials. Going from the bulk systems to thin films strongly affects the phase diagram of unconventional superconductors. For Fe$_{1+y}$Te, the parent compound of the Fe$_{1+y}$Se$_{1-x}$Te$_x$ superconductors, bulk sensitive neutron diffraction has revealed an in-plane oriented bicollinear antiferromagnetic structure. Here, we show by spin-resolved scanning tunneling microscopy that on the surfaces of bulk Fe$_{1+y}$Te, as well as on thin films grown on the topological insulator Bi$_2$Te$_3$, the spin direction is canted both away from the surface plane and from the high-symmetry directions of the surface unit cell, while keeping the bicollinear magnetic structure. Our results demonstrate that the magnetism at the Fe-chalcogenide surface markedly deviates from a simple in-plane oriented bicollinear antiferromagnetic structure, which implies that the pairing at the surface of the related superconducting compounds might be different from that in the bulk.

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preprint2016arXiv

Single-layer MoS$_2$ on Au(111): band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$, the valence band maximum has a significantly higher binding energy than in the free MoS$_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS$_2$ orbitals with the substrate.

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preprint2016arXiv

Tunable Carrier Multiplication and Cooling in Graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

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preprint2016arXiv

Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

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preprint2015arXiv

Growth and electronic structure of epitaxial single-layer WS$_2$ on Au(111)

Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS$_2$ a promising alternative to the widely studied MoS$_2$ for applications in electronics, spintronics and valleytronics.

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preprint2015arXiv

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$

The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

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preprint2015arXiv

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.

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preprint2015arXiv

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering.

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preprint2015arXiv

Synthesis of Epitaxial Single-Layer MoS$_2$ on Au(111)

We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS$_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS$_2$ islands, we identify domains rotated by 60$^{\circ}$ that lead to atomically sharp line defects at domain boundaries. As the MoS$_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS$_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS$_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS$_2$ layer from vacuum is not found to affect its quality.

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preprint2014arXiv

Bulk Band Structure of Bi$_2$Te$_3$

The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of \bite~when compared to LDA. Experimental and calculated results are compared in the spectral regions where distinct differences between the LDA and $GW$ results are present. Overall a superior agreement with $GW$ is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators.

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preprint2014arXiv

Electronic Structure of Epitaxial Single-Layer MoS$_2$

The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\pm$0.05)~eV direct band gap at $\bar{K}$ with the valence band top at $\barΓ$ having a significantly higher binding energy than at $\bar{K}$. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at $\bar{K}$ is found to be lifted by the spin-orbit interaction, leading to a splitting of (145$\pm$4)~meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the strength of the potassium doping is $k$-dependent, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.

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preprint2014arXiv

Extracting the Temperature of Hot Carriers in Time- and Angle-Resolved Photoemission

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

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preprint2014arXiv

High Crystallinity and Decoupling of Graphene on a Metal: Reduced Coulomb Screening and Tunable pn-Junctions

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy and density functional theory we demonstrate that oxygen intercalated epitaxial graphene on Ir(111) has high structural quality, is quasi free-standing, and shows signatures of many-body interactions. Using this system as a template, we show that tunable pn-junctions can be patterned by adsorption and intercalation of rubidium, and that the n-doped graphene regions exhibit a reduced Coulomb screening via enhanced electron-plasmon coupling. These findings are central for understanding and tailoring the properties of graphene-metal contacts e.g. for realizing quantum tunneling devices.

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preprint2014arXiv

Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas

Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction while the states are hardly split along $\barΓ\bar{K}$. The direction of the anisotropy is found to be qualitatively inconsistent with results expected for a third-order anisotropic Rashba Hamiltonian. However, a $\mathbf{k} \cdot \mathbf{p}$ model that includes the possibility of band structure anisotropy as well as both isotropic and anisotropic third order Rashba splitting can explain the results. The isotropic third order contribution to the Rashba Hamiltonian is found to be negative, reducing the energy splitting at high $k$. The interplay of band structure, higher order Rashba effect and tuneable doping offers the opportunity to engineer not only the size of the spin-orbit splitting but also its direction.

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preprint2014arXiv

Topological surface states on Bi$_{1-x}$Sb$_x$: Dependence on surface orientation, surface termination and stability

Topological insulators support metallic surface states whose existence is protected by the bulk band structure. It has been predicted early that the topology of the surface state Fermi contour should depend on several factors, such as the surface orientation and termination and this raises the question to what degree a given surface state is protected by the bulk electronic structure upon structural changes. Using tight-binding calculations, we explore this question for the prototypical topological insulator Bi$_{1-x}$Sb$_x$, studying different terminations of the (111) and (110) surfaces. We also consider the implications of the topological protection for the (110) surfaces for the semimetals Bi and Sb

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preprint2014arXiv

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.

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preprint2013arXiv

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi$_2$Te$_2$Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm$^{2}$V$^{-1}$s$^{-1}$ at 30 K at a carrier concentration of 8.71(7)$\times 10^{12}$ cm$^{-2}$.

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preprint2013arXiv

Direct view on the ultrafast carrier dynamics in graphene

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.

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preprint2013arXiv

Electron-phonon coupling-induced kinks in the sigma band of graphene

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $σ$ states. The existence of the effect suggests a very weak coupling of holes in the $σ$ band not only to the $π$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1.

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preprint2013arXiv

Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

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preprint2013arXiv

Synchrotron-radiation studies of topological insulators

Topological insulators (TIs) are a recently discovered class of quantum materials that are currently attracting considerable attention. The most interesting aspect of the TIs is, in fact, not that they are bulk insulators but that their surfaces support localized metallic states with some special properties, among others a characteristic spin texture. Most importantly, the existence of these metallic states is not a a surface property; it is required by the topology of the bulk band structure. This Chapter gives an accessible introduction into the physics and band structure of TI materials and into the study of TIs with synchrotron radiation-based techniques, in particular angle-resolved photoemission spectroscopy (ARPES).

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preprint2013arXiv

Tailoring the electronic texture of a topological insulator via its surface orientation

Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several topological insulator materials are currently known, the existence and topology of these metallic states have only ever been probed for one particular surface orientation of a given material. For most topological insulators, such as Bi$_{1-x}$Sb$_{x}$ and Bi$_2$Se$_3$, this surface is the closed-packed (111) surface and it supports one topologically guaranteed surface state Dirac cone. Here we experimentally realise a non closed-packed surface of a topological insulator, Bi$_{1-x}$Sb$_{x}$(110), and probe the surface state topology by angle-resolved photoemission. As expected, this surface also supports metallic states but the change in surface orientation drastically modifies the band topology, leading to three Dirac cones instead of one, in excellent agreement with the theoretical predictions but in contrast to any other experimentally studied TI surface. This illustrates the possibility to tailor the basic topological properties of the surface via its crystallographic direction. Here it introduces a valley degree of freedom not previously achieved for topological insulator systems.

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preprint2012arXiv

Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establish that the transport is purely two-dimensional. Combined with the carrier density obtained by angle-resolved photoemission spectroscopy, we find the room temperature mobility of MLG to be (870+-120)cm2/Vs. The transport in QFBLG is also found to be two-dimensional with a mobility of (1600+-160) cm2/Vs.

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preprint2012arXiv

Direct band structure measurement of a buried two-dimensional electron gas

Buried two dimensional electron gasses (2DEGs) have recently attracted considerable attention as a testing ground for both fundamental physics and quantum computation applications. Such 2DEGs can be created by phosphorus delta (δ) doping of silicon, a technique in which a dense and narrow dopant profile is buried beneath the Si surface. Phosphorous δ-doping is a particularly attractive platform for fabricating scalable spin quantum bit architectures, compatible with current semiconductor technology. The band structure of the δ-layers that underpin these devices has been studied intensely using different theoretical methods, but it has hitherto not been possible to directly compare these predictions with experimental data. Here we report the first measurement of the electronic band structure of a δ-doped layer below the Si(001) surface by angle resolved photoemission spectroscopy (ARPES). Our measurements confirm the layer to be metallic and give direct access to the Fermi level position. Surprisingly, the direct observation of the states is possible despite them being buried far below the surface. Using this experimental approach, buried states in a wide range of other material systems, including metallic oxide interfaces, could become accessible to direct spectroscopic investigations.

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preprint2012arXiv

Electron-phonon coupling in quasi free-standing graphene

Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.

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preprint2012arXiv

High-temperature behaviour of supported graphene: electron-phonon coupling and substrate-induced doping

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-dependent mobility reduction could be explained by scattering of carriers with phonons, but this is expected to be weak for pristine, weakly-doped graphene. The mobility reduction has therefore been ascribed to the interaction with confined ripples or substrate phonons. Here we study the temperature-dependent electronic structure of supported graphene by angle-resolved photoemission spectroscopy, a technique that can reveal the origin of the phenomena observed in transport measurements. We show that the electron-phonon coupling for weakly-doped, supported graphene on a metal surface is indeed extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier type and density that is relevant for transport. Using ab initio molecular dynamics simulations, we show that these changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.

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preprint2012arXiv

Robust Surface Doping of Bi$_2$Se$_3$ by Rb Intercalation

Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive and exposure to oxygen leads to a rapid degrading of the 2DEGs. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi$_2$Se$_3$, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.

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preprint2012arXiv

Surface states on a topologically non-trivial semimetal: The case of Sb(110)

The electronic structure of Sb(110) is studied by angle-resolved photoemission spectroscopy and first-principle calculations, revealing several electronic surface states in the projected bulk band gaps around the Fermi energy. The dispersion of the states can be interpreted in terms of a strong spin-orbit splitting. The bulk band structure of Sb has the characteristics of a strong topological insulator with a Z2 invariant nu0=1. This puts constraints on the existence of metallic surface states and the expected topology of the surface Fermi contour. However, bulk Sb is a semimetal, not an insulator and these constraints are therefore partly relaxed. This relation of bulk topology and expected surface state dispersion for semimetals is discussed.

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preprint2012arXiv

The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study

Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bending of the bands near the surface. This time-dependent band bending is related to a contamination of the surface and can be accelerated by intentionally exposing the surface to carbon monoxide and other species. For a sufficiently strong band bending, additional states appear at the Fermi level. These are interpreted as quantised conduction band states. For large band bendings, these states are found to undergo a strong Rashba splitting. The formation of quantum well states is also observed for the valence band states. Different interpretations of similar data are also discussed.

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preprint2012arXiv

Transfer-free electrical insulation of epitaxial graphene from its metal substrate

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps by x-ray photoemission spectroscopy and demonstrate the electrical insulation using a nano-scale multipoint probe technique.

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preprint2011arXiv

Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3

Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is only possible because of the unusual bulk electronic structure of Bi2Se3. The valence band quantization leads to spectral features which resemble those of a band gap opening at the Dirac point.

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preprint2011arXiv

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.

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preprint2010arXiv

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator Bi$_2$Se$_3$ gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in Bi$_2$Se$_3$. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space.

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