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Bo Brummerstedt Iversen

Bo Brummerstedt Iversen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.quant-gas

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Published work

15 published item(s)

preprint2022arXiv

Direct visualization of magnetic correlations in frustrated spinel ZnFe$_2$O$_4$

Magnetic materials with the spinel structure (A$^{2+}$B$^{3+}_2$O$^4$) form the core of numerous magnetic devices, but ZnFe$_2$O$_4$ constitutes a peculiar example where the nature of the magnetism is still unresolved. Susceptibility measurements revealed a cusp around $T_c=13\;\mathrm{K}$ resembling an antiferromagnetic transition, despite the positive Curie-Weiss temperature determined to be $Θ_{CW}=102.8(1)\;\mathrm{K}$. Bifurcation of field-cooled and zero-field-cooled data below $T_c$ in conjunction with a frequency dependence of the peak position and a non-zero imaginary component below $T_c$ shows it is in fact associated with a spin-glass transition. Highly structured magnetic diffuse neutron scattering from single crystals develops between $50\;\mathrm{K}$ and $25\;\mathrm{K}$ revealing the presence of magnetic disorder which is correlated in nature. Here, the 3D-m$Δ$PDF method is used to visualize the local magnetic ordering preferences, and ferromagnetic nearest-neighbor and antiferromagnetic third nearest-neighbor correlations are shown to be dominant. Their temperature dependence is extraordinary with some flipping in sign, and a strongly varying correlation length. The correlations can be explained by orbital interaction mechanisms for the magnetic pathways, and a preferred spin cluster. Our study demonstrates the power of the 3D-m$Δ$PDF method in visualizing complex quantum phenomena thereby providing a way to obtain an atomic scale understanding of magnetic frustration.

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preprint2022arXiv

Improving the operational stability of thermoelectric Zn$_4$Sb$_3$ by segmentation

The mixed ionic-electronic conductor $β$-Zn$_4$Sb$_3$ is a cheap and high performing thermoelectric material, but under operating conditions with a temperature gradient and a running current, the material decomposes as Zn readily migrates in the structure. Here, we report an improved stability of $β$-Zn$_4$Sb$_3$ by introducing ion-blocking interfaces of stainless steel to segment the sample, produced by a rapid one-step Spark Plasma Sintering synthesis. The stability of the samples is tested under temperature gradients and electric currents, which reveals significantly improved stability of the segmented samples compared to unsegmented samples. The segmented samples are stable under temperature gradient from 250°C to room temperature with no external current, whereas the unsegmented sample decomposes into ZnSb and Zn under the same conditions. The thermoelectric figure of merit, zT, of the segmented sample is slightly reduced, mainly due to the increased thermal conductivity. In conclusion, a rapid one-step synthesis of segmented $β$-Zn$_4$Sb$_3$ is developed, which successfully improves the long-term operational stability by blocking the Zn ion migration.

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preprint2020arXiv

A simple model for vacancy order and disorder in defective half-Heusler systems

Defective half-Heusler systems X(1-x)YZ with large amounts of intrinsic vacancies, such as Nb(1-x)CoSb, Ti(1-x)NiSb and V(1-x)CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ lattice, which conducts electrons, while the large amounts of vacancies on the X sublattice effectively scatters phonons. Using electron scattering it was recently observed that in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order while other samples show sharp additional peaks, indicating long-range vacancy ordering. Here we show that both the short and long-range ordering can be explained using the same simple model, which assumes that vacancies on the X-sublattice avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground-state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.

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preprint2020arXiv

Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics

The recent discovery of n-type Mg$_3$Sb$_2$ thermoelectric has ignited intensive research activities on searching for potential n-type dopants for this material. Using first-principles defect calculations, here we conduct a systematic computational screening of potential efficient n-type lanthanide dopants for Mg$_3$Sb$_2$. In addition to La, Ce, Pr, and Tm, we find that high electron concentration ($\geq$ 10$^{20}$ cm$^{-3}$ at the growth temperature of 900 K) can be achieved by doping on the Mg sites with Nd, Gd, Ho, and Lu, which are generally more efficient than other lanthanide dopants and the anion-site dopant Te. Experimentally, we confirm Nd and Tm as effective n-type dopants for Mg$_3$Sb$_2$ since doping with Nd and Tm shows superior thermoelectric figure of merit zT $\geq$ 1.3 with higher electron concentration than doping with Te. Through codoping with Nd (Tm) and Te, simultaneous power factor improvement and thermal conductivity reduction are achieved. As a result, we obtain high zT values of about 1.65 and 1.75 at 775 K in n-type Mg$_{3.5}$Nd$_{0.04}$Sb$_{1.97}$Te$_{0.03}$ and Mg$_{3.5}$Tm$_{0.03}$Sb$_{1.97}$Te$_{0.03}$, respectively, which are among the highest values for n-type Mg$_3$Sb$_2$ without alloying with Mg$_3$Bi$_2$. This work sheds light on exploring promising n-type dopants for the design of Mg$_3$Sb$_2$ thermoelectrics.

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preprint2018arXiv

Relating chemical bonding to physical properties: The origin of unexpected isotropic properties in layered materials

Layered materials span a very broad range of solids ranging from van der Waals materials to highly complex crystal structures such as clays. They are commonly believed to have highly anisotropic properties, which is essentially attributed to weak interlayer interactions. The layered Mg3Sb2 structure is currently being intensely scrutinized due to its outstanding thermoelectric properties. Based on quantitative chemical bonding analysis we unravel that Mg3Sb2 exhibits a nearly isotropic three-dimensional (3D) bonding network with the interlayer and intralayer bonds being surprisingly similar, and these unique chemical bonding features are the origin of the nearly isotropic structural and thermal properties. The isotropic 3D bonding network is found to be broadly applicable to many Mg-containing compounds with the layered CaAl2Si2-type structure. Intriguingly, a parameter based on the electron density can be used as an indicator measuring the anisotropy of lattice thermal conductivity in layered structures. This work extends our understanding of structure and properties based on chemical bonding analysis, and it will guide the search for, and design of, layered materials with tailored anisotropic properties.

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preprint2016arXiv

Reorientation of the bicollinear antiferromagnetic structure at the surface of Fe$_{1+y}$Te bulk and thin films

Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the complex physics in these materials. Going from the bulk systems to thin films strongly affects the phase diagram of unconventional superconductors. For Fe$_{1+y}$Te, the parent compound of the Fe$_{1+y}$Se$_{1-x}$Te$_x$ superconductors, bulk sensitive neutron diffraction has revealed an in-plane oriented bicollinear antiferromagnetic structure. Here, we show by spin-resolved scanning tunneling microscopy that on the surfaces of bulk Fe$_{1+y}$Te, as well as on thin films grown on the topological insulator Bi$_2$Te$_3$, the spin direction is canted both away from the surface plane and from the high-symmetry directions of the surface unit cell, while keeping the bicollinear magnetic structure. Our results demonstrate that the magnetism at the Fe-chalcogenide surface markedly deviates from a simple in-plane oriented bicollinear antiferromagnetic structure, which implies that the pairing at the surface of the related superconducting compounds might be different from that in the bulk.

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preprint2015arXiv

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering.

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preprint2014arXiv

Strongly anisotropic spin-orbit splitting in a two-dimensional electron gas

Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states. The $k$-dependent splitting is strongly anisotropic to a degree where a large splitting ($\approx 0.06$ Å$^{-1}$) can be found in the $\barΓ\bar{M}$ direction while the states are hardly split along $\barΓ\bar{K}$. The direction of the anisotropy is found to be qualitatively inconsistent with results expected for a third-order anisotropic Rashba Hamiltonian. However, a $\mathbf{k} \cdot \mathbf{p}$ model that includes the possibility of band structure anisotropy as well as both isotropic and anisotropic third order Rashba splitting can explain the results. The isotropic third order contribution to the Rashba Hamiltonian is found to be negative, reducing the energy splitting at high $k$. The interplay of band structure, higher order Rashba effect and tuneable doping offers the opportunity to engineer not only the size of the spin-orbit splitting but also its direction.

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preprint2013arXiv

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi$_2$Te$_2$Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm$^{2}$V$^{-1}$s$^{-1}$ at 30 K at a carrier concentration of 8.71(7)$\times 10^{12}$ cm$^{-2}$.

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preprint2013arXiv

Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

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preprint2012arXiv

Robust Surface Doping of Bi$_2$Se$_3$ by Rb Intercalation

Rubidium adsorption on the surface of the topological insulator Bi$_2$Se$_3$ is found to induce a strong downward band bending, leading to the appearance of a quantum-confined two dimensional electron gas states (2DEGs) in the conduction band. The 2DEGs shows a strong Rashba-type spin-orbit splitting, and it has previously been pointed out that this has relevance to nano-scale spintronics devices. The adsorption of Rb atoms, on the other hand, renders the surface very reactive and exposure to oxygen leads to a rapid degrading of the 2DEGs. We show that intercalating the Rb atoms, presumably into the van der Waals gaps in the quintuple layer structure of Bi$_2$Se$_3$, drastically reduces the surface reactivity while not affecting the promising electronic structure. The intercalation process is observed above room temperature and accelerated with increasing initial Rb coverage, an effect that is ascribed to the Coulomb interaction between the charged Rb ions. Coulomb repulsion is also thought to be responsible for a uniform distribution of Rb on the surface.

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preprint2012arXiv

The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study

Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bending of the bands near the surface. This time-dependent band bending is related to a contamination of the surface and can be accelerated by intentionally exposing the surface to carbon monoxide and other species. For a sufficiently strong band bending, additional states appear at the Fermi level. These are interpreted as quantised conduction band states. For large band bendings, these states are found to undergo a strong Rashba splitting. The formation of quantum well states is also observed for the valence band states. Different interpretations of similar data are also discussed.

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preprint2011arXiv

Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3

Exposing the (111) surface of the topological insulator Bi2Se3 to carbon monoxide results in strong shifts of the features observed in angle-resolved photoemission. The behavior is very similar to an often reported `aging' effect of the surface and it is concluded that this aging is most likely due to the adsorption of rest gas molecules. The spectral changes are also similar to those recently reported in connection with the adsorption of the magnetic adatom Fe. All spectral changes can be explained by a simultaneous confinement of the conduction band and valence band states. This is only possible because of the unusual bulk electronic structure of Bi2Se3. The valence band quantization leads to spectral features which resemble those of a band gap opening at the Dirac point.

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preprint2011arXiv

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.

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preprint2010arXiv

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator Bi$_2$Se$_3$ gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in Bi$_2$Se$_3$. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space.

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