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Søren Ulstrup

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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23 publications

preprint2023arXiv

Ultrafast X-ray imaging of the light-induced phase transition in VO2

Using light to control transient phases in quantum materials is an emerging route to engineer new properties and functionality, with both thermal and non-thermal phases observed out of equilibrium. Transient phases are expected to be heterogeneous, either through photo-generated domain growth or by generating topological defects, and this impacts the dynamics of the system. However, this nanoscale heterogeneity has not been directly observed. Here we use time- and spectrally resolved coherent X-ray imaging to track the prototypical light induced insulator-to-metal phase transition in vanadium dioxide on the nanoscale with femtosecond time resolution. We show that the early-time dynamics are independent of the initial spatial heterogeneity and observe a 200 fs switch to the metallic phase. A heterogeneous response emerges only after hundreds of picoseconds. Through spectroscopic imaging, we reveal that the transient metallic phase is a highly orthorhombically strained rutile metallic phase, an interpretation that is in contrast to those based on spatially averaged probes. Our results demonstrate the critical importance of spatially and spectrally resolved measurements for understanding and interpreting the transient phases of quantum materials.

Open access
preprint2020arXiv

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations.

Open access
preprint2019arXiv

Direct observation of minibands in twisted heterobilayers

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 μμm, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS2_2 at variable interlayer twist angles (θθ). Minibands are directly observed for θ=2.5∘θ= 2.5^{\circ} in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of θ=26.3∘θ= 26.3^{\circ}. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12].

Open access
preprint2019arXiv

Imaging microscopic electronic contrasts at the interface of single-layer WS2_2 with oxide and boron nitride substrates

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS2_2 stacked on hBN, SiO2_2 and TiO2_2 substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS2_2 and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.

Open access
preprint2019arXiv

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in (kxk_x, kyk_y, EE) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å −1^{-1} diameter in a binding-energy range of several eV, resolving about 2.5×1052.5\times10^5 data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe2_2.

Open access
preprint2016arXiv

Manifestation of nonlocal electron-electron interaction in graphene

Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied ππ-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the bottom of the band moves less than the Dirac point. We show that the observed shift cannot be accounted for by band structure calculations in the local density approximation but that non-local exchange interactions must be taken into account.

Open access
preprint2016arXiv

Single-layer MoS2_2 on Au(111): band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS2_2 on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at Kˉ\bar{K} and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At Γˉ\barΓ, the valence band maximum has a significantly higher binding energy than in the free MoS2_2 layer and the expected spin-degeneracy of the uppermost valence band at the Mˉ\bar{M} point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS2_2 orbitals with the substrate.

Open access
preprint2016arXiv

Spatially Resolved Electronic Properties of Single-Layer WS2_2 on Transition Metal Oxides

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-κκ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS2_2, can be transferred onto high-κκ transition metal oxide substrates TiO2_2 and SrTiO3_3. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO2_2 substrates. We probe the WS2_2 on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS2_2 with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.

Open access
preprint2016arXiv

Tunable Carrier Multiplication and Cooling in Graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (nn-)doped graphene, we observe larger carrier multiplication factors (>> 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (pp-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

Open access
preprint2016arXiv

Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the ππ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

Open access
preprint2015arXiv

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2_2

The dynamics of excited electrons and holes in single layer (SL) MoS2_2 have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS2_2 on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS2_2. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

Open access
preprint2015arXiv

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.

Open access
preprint2015arXiv

Synthesis of Epitaxial Single-Layer MoS2_2 on Au(111)

We present a method for synthesizing large area epitaxial single-layer MoS2_2 on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS2_2 islands to a continuous MoS2_2 layer. An exceptionally good control over the MoS2_2 coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS2_2 nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS2_2 islands, we identify domains rotated by 60∘^{\circ} that lead to atomically sharp line defects at domain boundaries. As the MoS2_2 coverage approaches the limit of a complete single-layer, the formation of bilayer MoS2_2 islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS2_2 samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS2_2 layer from vacuum is not found to affect its quality.

Open access
preprint2014arXiv

Electronic Structure of Epitaxial Single-Layer MoS2_2

The electronic structure of epitaxial single-layer MoS2_2 on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39±\pm0.05)~eV direct band gap at Kˉ\bar{K} with the valence band top at Γˉ\barΓ having a significantly higher binding energy than at Kˉ\bar{K}. The moiré superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at Kˉ\bar{K} is found to be lifted by the spin-orbit interaction, leading to a splitting of (145±\pm4)~meV. This splitting is anisotropic and in excellent agreement with recent calculations. Finally, it is shown that the strength of the potassium doping is kk-dependent, leading to the possibility of band structure engineering in single-layers of transition metal dichalcogenides.

Open access
preprint2014arXiv

Extracting the Temperature of Hot Carriers in Time- and Angle-Resolved Photoemission

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

Open access
preprint2014arXiv

High Crystallinity and Decoupling of Graphene on a Metal: Reduced Coulomb Screening and Tunable pn-Junctions

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy and density functional theory we demonstrate that oxygen intercalated epitaxial graphene on Ir(111) has high structural quality, is quasi free-standing, and shows signatures of many-body interactions. Using this system as a template, we show that tunable pn-junctions can be patterned by adsorption and intercalation of rubidium, and that the n-doped graphene regions exhibit a reduced Coulomb screening via enhanced electron-plasmon coupling. These findings are central for understanding and tailoring the properties of graphene-metal contacts e.g. for realizing quantum tunneling devices.

Open access
preprint2014arXiv

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.

Open access
preprint2013arXiv

Direct view on the ultrafast carrier dynamics in graphene

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.

Open access
preprint2013arXiv

Tailoring the electronic texture of a topological insulator via its surface orientation

Three dimensional topological insulator crystals consist of an insulating bulk enclosed by metallic surfaces, and detailed theoretical predictions about the surface state band topology and spin texture are available. While several topological insulator materials are currently known, the existence and topology of these metallic states have only ever been probed for one particular surface orientation of a given material. For most topological insulators, such as Bi1−x_{1-x}Sbx_{x} and Bi2_2Se3_3, this surface is the closed-packed (111) surface and it supports one topologically guaranteed surface state Dirac cone. Here we experimentally realise a non closed-packed surface of a topological insulator, Bi1−x_{1-x}Sbx_{x}(110), and probe the surface state topology by angle-resolved photoemission. As expected, this surface also supports metallic states but the change in surface orientation drastically modifies the band topology, leading to three Dirac cones instead of one, in excellent agreement with the theoretical predictions but in contrast to any other experimentally studied TI surface. This illustrates the possibility to tailor the basic topological properties of the surface via its crystallographic direction. Here it introduces a valley degree of freedom not previously achieved for topological insulator systems.

Open access
preprint2012arXiv

Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establish that the transport is purely two-dimensional. Combined with the carrier density obtained by angle-resolved photoemission spectroscopy, we find the room temperature mobility of MLG to be (870+-120)cm2/Vs. The transport in QFBLG is also found to be two-dimensional with a mobility of (1600+-160) cm2/Vs.

Open access
preprint2012arXiv

Electron-phonon coupling in quasi free-standing graphene

Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.

Open access
preprint2012arXiv

High-temperature behaviour of supported graphene: electron-phonon coupling and substrate-induced doping

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-dependent mobility reduction could be explained by scattering of carriers with phonons, but this is expected to be weak for pristine, weakly-doped graphene. The mobility reduction has therefore been ascribed to the interaction with confined ripples or substrate phonons. Here we study the temperature-dependent electronic structure of supported graphene by angle-resolved photoemission spectroscopy, a technique that can reveal the origin of the phenomena observed in transport measurements. We show that the electron-phonon coupling for weakly-doped, supported graphene on a metal surface is indeed extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier type and density that is relevant for transport. Using ab initio molecular dynamics simulations, we show that these changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.

Open access
preprint2012arXiv

Nonequilibrium electron-vibration coupling and conductance fluctuations in a C60-junction

We investigate chemical bond formation and conductance in a molecular C60-junction under finite bias voltage using first-principles calculations based on density functional theory and nonequilibrium Green's functions (DFT-NEGF). At the point of contact formation we identify a remarkably strong coupling between the C60-motion and the molecular electronic structure. This is only seen for positive sample bias, although the conductance itself is not strongly polarity dependent. The nonequilibrium effect is traced back a sudden shift in the position of the voltage drop with a small C60-displacement. Combined with a vibrational heating mechanism we construct a model from our results that explain the polarity-dependent two-level conductance fluctuations observed in recent scanning tunneling microscopy (STM) experiments [N. Néel et al., Nano Lett. 11, 3593 (2011)]. These findings highlight the significance of nonequilibrium effects in chemical bond formation/breaking and in electron-vibration coupling in molecular electronics.

Open access

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