Researcher profile

Philip B. Allen

Philip B. Allen contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Non-local thermal transport modeling using the thermal distributor

Thermal transport in a quasi-ballistic regime is determined not only by the local temperature $T(r)$, or its gradient $\nabla T(r)$, but also by temperature distribution at neighboring points. For an accurate description of non-local effects on thermal transport, we employ the thermal distributor, $Θ(r,r')$, which provides the temperature response of the system at point $r$ to the heat input at point $r'$. We determine the thermal distributors from the linearized Peierls-Boltzmann equation (LPBE) and the relaxation time approximation (RTA) of the Peierls-Boltzmann equation and employ them to describe thermal transport in quasi-ballistic graphene devices.

preprint2022arXiv

Nonlocal Phonon Heat Transport Seen in 1-d Pulses

Phonons are the main heat carriers in semiconductor devices. In small devices, heat is not driven by a local temperature gradient, but by local points of heat input and removal. This complicates theoretical modeling. Study of the propagation of vibrational energy from an initial localized pulse provides insight into nonlocal phonon heat transport. We report simulations of pulse propagation in one dimension. The 1d case has tricky anomalies, but provides the simplest pictures of the evolution from initially ballistic toward longer time diffusive propagation. Our results show surprising details, such as diverse results from different definitions of atomistic local energy, and failure to exhibit pure diffusion at long times. Boltzmann phonon gas theory, including external energy insertion, is applied to this inherentlytime-dependent and nonlocal problem. The solution, using relaxation time approximation for impurity scattering, does not closely agree with the simulated results.

preprint2020arXiv

Accidental Degeneracy in k-space, Geometrical Phase, and the Perturbation of $π$ by Spin-orbit Interactions

Since closed lines of {\it accidental} electronic degeneracies were demonstrated to be possible, even frequent, by Herring in 1937, no further developments arose for eight decades. The earliest report of such a nodal loop in a real material -- aluminum -- is recounted and elaborated on. Nodal loop semimetals have become a focus of recent activity, with emphasis on other issues. Band degeneracies are, after all, the origin of topological phases in crystalline materials. Spin-orbit interaction lifts accidental band degeneracies, with the resulting spectrum being provided here. The geometric phase $γ(C)=\pmπ$ for circuits $C$ surrounding a line of such degeneracy cannot survive completely unchanged. The change depends on how the spin is fixed during adiabatic evolution. For spin fixed along the internal spin-orbit field, $γ(C)$ decreases to zero as the circuit collapses around the line of lifted degeneracy. For spin fixed along a perpendicular axis, the conical intersection persists and $γ(C)=\pmπ$ is unchanged.