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Ali Kefayati

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Published work

3 published item(s)

preprint2022arXiv

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy. Specifically, we control the radiative recombination path and emission rate, electronic bandgap energy, and neutral to charged exciton conversion with <20 nm spatial resolution in a reversible manner. It is achieved through the tip-induced engineering of Au tip-heterobilayer distance and interlayer distance, GPa scale local pressure, and plasmonic hot-electron injection respectively, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for developing versatile nano-excitonic devices based on TMD heterobilayers.

preprint2022arXiv

Non-local thermal transport modeling using the thermal distributor

Thermal transport in a quasi-ballistic regime is determined not only by the local temperature $T(r)$, or its gradient $\nabla T(r)$, but also by temperature distribution at neighboring points. For an accurate description of non-local effects on thermal transport, we employ the thermal distributor, $Θ(r,r')$, which provides the temperature response of the system at point $r$ to the heat input at point $r'$. We determine the thermal distributors from the linearized Peierls-Boltzmann equation (LPBE) and the relaxation time approximation (RTA) of the Peierls-Boltzmann equation and employ them to describe thermal transport in quasi-ballistic graphene devices.

preprint2022arXiv

Quantum Sensing of Single Phonons via Phonon Drag in Two-Dimensional Materials

The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy transfer at the single-phonon level. The geometry we consider is one in which a drag momentum is exerted on electrons in a graphene layer, by a single out-of-equilibrium phonon in a dielectric layer of hexagonal boron nitride, giving rise to a measurable induced voltage ($V_{\rm drag}$). Our numerical solution of the Boltzmann Transport Equation shows that this drag voltage can reach a level of a few hundred microvolts per phonon, well above experimental detection limits. Furthermore, we predict that $V_{\rm drag}$ should be highly insensitive to the mobility of carriers in the graphene layer and to increasing the temperature to at least 300 K, offering the potential of a versatile material platform for single-phonon sensing.