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Peter P. Vasil'ev

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Published work

4 published item(s)

preprint2016arXiv

High-Bandwidth and Large Coupling Tolerance Graded-Index Multimode Polymer Waveguides for On-board High-Speed Optical Interconnects

Optical interconnects have attracted significant research interest for use in short-reach board-level optical communication links in supercomputers and data centres. Multimode polymer waveguides in particular constitute an attractive technology for on-board optical interconnects as they provide high bandwidth, offer relaxed alignment tolerances, and can be cost-effectively integrated onto standard printed circuit boards (PCBs). However, the continuing improvements in bandwidth performance of optical sources make it important to investigate approaches to develop high bandwidth polymer waveguides. In this paper, we present dispersion studies on a graded-index (GI) waveguide in siloxane materials designed to deliver high bandwidth over a range of launch conditions. Bandwidth-length products of >70 GHzxm and ~65 GHzxm are observed using a 50/125 um multimode fibre (MMF) launch for input offsets of +/- 10 um without and with the use of a mode mixer respectively; and enhanced values of >100 GHzxm are found under a 10x microscope objective launch for input offsets of ~18 x 20 um^2. The large range of offsets is within the -1 dB alignment tolerances. A theoretical model is developed using the measured refractive index profile of the waveguide, and general agreement is found with experimental bandwidth measurements. The reported results clearly demonstrate the potential of this technology for use in high-speed board-level optical links, and indicate that data transmission of 100 Gb/s over a multimode polymer waveguide is feasible with appropriate refractive index engineering.

preprint2015arXiv

Pulse generation with ultra-superluminal pulse propagation in semiconductor heterostructures by superradiant phase transition enhanced by transient coherent population gratings

This paper reports the observation of ultra-superluminal pulse propagation in GaAs/AlGaAs multiple contact heterostuctures in a superradiant emission regime, and shows definitively that it is a different class of emission from conventional spontaneous or stimulated emission. It is shown that coherent population gratings induced in the semiconductor medium under strong electrical pumping have great impact in causing a decrease of the group refractive index in the range of 5-40%. This decrease is much greater than that which would be observed due to conventional carrier depletion or chirp mechanisms. The decrease in refractive index in turn causes faster-than-c propagation of femtosecond pulses. The measurement also shows unequivocally the exist of coherent amplification of electromagnetic pulses in semiconductors at room temperature, the coherence being strongly enhanced by interactions of the light with coherent transient gratings locked to carrier gratings. This pulse generation technique can be anticipated to have great potential in applications where highly coherent femtosecond optical pulses must be generated on demand

preprint2012arXiv

Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser

A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mode clusters is typically by an order of magnitude larger that the individual mode spacing.

preprint2011arXiv

Theory of the ultrafast mode-locked GaN lasers in a large-signal regime

Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.