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Igor V. Smetanin

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physics.optics cond-mat.mes-hall math-ph math.MP physics.chem-ph quant-ph

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preprint2022arXiv

Effect of Tamm surface states on hot electron generation and Landau damping in nanostructures metal-semiconductor

The hot electron generation in plasmonic nanoparticles is the key to efficient plasmonic photocatalysis. In the paper, we study theoretically for the first time the effect of Tamm states (TSs) at the interface metal-semiconductor on hot electron generation and Landau damping (LD) in metal nanoparticles. TSs can lead to resonant hot electron generation and to the LD rate enhanced by several times. The resonant hot electron generation is reinforced by the transition absorption due to the jump of the permittivity at the metal-semiconductor interface.

preprint2020arXiv

Electrostatic control over optically-pumped hot electrons in optical gap antennas

We investigate the influence of a static electric field on the incoherent nonlinear response of an unloaded electrically-contacted nanoscale optical gap antenna. Upon excitation by a tightly focused near-infrared femtosecond laser beam, a transient elevated temperature of the electronic distribution results in a broadband emission of nonlinear photoluminescence (N-PL). We demonstrate a modulation of the yield at which driving photons are frequency up-converted by means of an external control of the electronic surface charge density. We show that the electron temperature and consequently the N-PL intensity can be enhanced or reduced depending on the command polarity and the strength of the control static field. A modulation depth larger than 100\% is observed for activation voltages of a few volts.

preprint2016arXiv

Excitation of plasmonic nanoantennas with nonresonant and resonant electron tunnelling

A rigorous theory of photon emission accompanied inelastic tunnelling inside the gap of plasmonic nanoantennas has been developed. The disappointingly low efficiency of the electrical excitation of surface plasmon polaritons in these structures can be increased by orders of magnitude when a resonant tunnelling structure is incorporated inside the gap. Resonant tunnelling assisted surface plasmon emitter may become a key element in future electrically-driven nanoplasmonic circuits.

preprint2015arXiv

Spontaneous hot-electron light emission from electron-fed optical antennas

Nanoscale electronics and photonics are among the most promising research areas providing functional nano-components for data transfer and signal processing. By adopting metal-based optical antennas as a disruptive technological vehicle, we demonstrate that these two device-generating technologies can be interfaced to create an electronically-driven self-emitting unit. This nanoscale plasmonic transmitter operates by injecting electrons in a contacted tunneling antenna feedgap. Under certain operating conditions, we show that the antenna enters a highly nonlinear regime in which the energy of the emitted photons exceeds the quantum limit imposed by the applied bias. We propose a model based upon the spontaneous emission of hot electrons that correctly reproduces the experimental findings. The electron-fed optical antennas described here are critical devices for interfacing electrons and photons, enabling thus the development of optical transceivers for on-chip wireless broadcasting of information at the nanoscale.

preprint2012arXiv

Enhanced longitudinal mode spacing in blue-violet InGaN semiconductor laser

A novel explanation of observed enhanced longitudinal mode spacing in InGaN semiconductor lasers has been proposed. It has been demonstrated that e-h plasma oscillations, which can exist in the laser active layer at certain driving conditions, are responsible for mode clustering effect. The resonant excitation of the plasma oscillations occurs due to longitudinal mode beating. The separation of mode clusters is typically by an order of magnitude larger that the individual mode spacing.

preprint2011arXiv

Theory of the ultrafast mode-locked GaN lasers in a large-signal regime

Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is achieved by solving the mode-locking master equation in the pulse energy-domain representation. The performances of monolithic sub-picosecond blue-violet GaN mode-locked diode laser in the high-power operation regime are analyzed using the developed approach.