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P. Stano

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Published work

5 published item(s)

preprint2016arXiv

Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade

We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

preprint2016arXiv

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.

preprint2014arXiv

Spin relaxation anisotropy in a GaAs quantum dot

We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots as due to the interplay of Rashba and Dresselhaus spin orbit contributions. Different from this prediction, we find that the extrema in the T1 do not occur when the magnetic field is along the [110] and [1-10] crystallographic directions. This deviation is attributed to an elliptical dot confining potential. The T1 varies by more than an order of magnitude when rotating a 3 Tesla field, reaching about 80 ms for the magic angle. We infer from the data that in our device the sign of the Rashba and Dresselhaus constants are opposite.

preprint2012arXiv

Spin ordering in magnetic quantum dots: From core-halo to Wigner molecules

The interplay of confinement and Coulomb interactions in quantum dots can lead to strongly correlated phases differing qualitatively from the Fermi liquid behavior. We explore how the presence of magnetic impurities in quantum dots can provide additional opportunities to study correlation effects and the resulting ordering in carrier and impurity spin. By employing exact diagonalization we reveal that seemingly simple two-carrier quantum dots lead to a rich phase diagram. We propose experiments to verify our predictions, in particular we discuss interband optical transitions as a function of temperature and magnetic field.

preprint2007arXiv

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.