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Source author record

S. Tarucha

S. Tarucha appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

37 published item(s)

preprint2020arXiv

Coherent beam splitting of flying electrons driven by a surface acoustic wave

We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well reproduced by numerical calculations of time evolution of the SAW-driven single electrons. The oscillation visibility is currently limited to about 3%, but robust against decoherence, indicating that the SAW-electron can serve as a novel platform for a solid-state flying qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological Kagome magnet Co3Sn2S2 thin flakes with high electron mobility and large anomalous Hall effect

Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of high-quality, where we identify the largest electron mobility (~2,600 cm2V-1s-1) among magnetic topological semimetals, as well as the large anomalous Hall conductivity (~1,400 Ω-1cm-1) and anomalous Hall angle (~32 %) arising from the Berry curvature. Our study provides a viable platform for studying high-quality thin flakes of magnetic Weyl semimetal and stimulate further research on unexplored topological phenomena in the two-dimensional limit.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Repetitive single electron spin readout in silicon

Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. However, it has remained elusive for an electron spin in silicon as it involves exquisite exposure of the system to the external circuitry for readout while maintaining the coherence and integrity of the qubit. Here we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (> 99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a new class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ballistic graphene Josephson junctions from the short to the long regime

We investigate the critical current, $I_C$, of ballistic Josephson junctions made of encapsulated graphene/boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, $I_S$ is found to scale as $\propto \exp(-k_bT/δE)$. The extracted energies $δE$ are independent of the carrier density and proportional to the level spacing of the ballistic cavity, as determined from Fabry-Perot oscillations of the junction normal resistance. As $T\rightarrow 0$ the critical current of a long (or short) junction saturates at a level determined by the product of $δE$ (or $Δ$) and the number of the junction's transversal modes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade

We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-temperature behavior of transmission phase shift across a Kondo correlated quantum dot

We study the transmission phase shift across a Kondo correlated quantum dot in a GaAs heterostructure at temperatures below the Kondo temperature ($T < T_{\rm K}$), where the phase shift is expected to show a plateau at $π/2$ for an ideal Kondo singlet ground state. Our device is tuned such that the ratio $Γ/U$ of level width $Γ$ to charging energy $U$ is quite large ($\lesssim 0.5$ rather than $\ll 1$). This situation is commonly used in GaAs quantum dots to ensure Kondo temperatures large enough ($\simeq 100$ mK here) to be experimentally accessible; however it also implies that charge fluctuations are more pronounced than typically assumed in theoretical studies focusing on the regime $Γ/U \ll 1$ needed to ensure a well-defined local moment. Our measured phase evolves monotonically by $π$ across the two Coulomb peaks, but without being locked at $π/2$ in the Kondo valley for $T \ll T_{\rm K}$, due to a significant influence of large $Γ/U$. Only when $Γ/U$ is reduced sufficiently does the phase start to be locked around $π/2$ and develops into a plateau at $π/2$. Our observations are consistent with numerical renormalization group calculations, and can be understood as a direct consequence of the Friedel sum rule that relates the transmission phase shift to the local occupancy of the dot, and thermal average of a transmission coefficient through a resonance level near the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different material. Superconductivity in graphene is induced via the proximity effect, thus resulting in both a large measured superconducting gap $Δ=0.5$meV, and a long coherence length $ξ=200$nm. The graphene-graphene, flat, two dimensional, superconductor-QD interface lowers the capacitance of the quantum dots, thus increasing the charging energy $E_C$ (in contrast to previous devices). As a result we measure a visibility of up to 96% and a splitting efficiency of up to 62%. Finally, the devices utilize graphene grown by chemical vapor deposition allowing for a standardized device design with potential for increased complexity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Measurement of the Transmission Phase of an Electron in a Quantum Two-Path Interferometer

A quantum two-path interferometer allows for direct measurement of the transmission phase shift of an electron, providing useful information on coherent scattering problems. In mesoscopic systems, however, the two-path interference is easily smeared by contributions from other paths, and this makes it difficult to observe the \textit{true} transmission phase shift. To eliminate this problem, multi-terminal Aharonov-Bohm (AB) interferometers have been used to derive the phase shift by assuming that the relative phase shift of the electrons between the two paths is simply obtained when a smooth shift of the AB oscillations is observed. Nevertheless the phase shifts using such a criterion have sometimes been inconsistent with theory. On the other hand, we have used an AB ring contacted to tunnel-coupled wires and acquired the phase shift consistent with theory when the two output currents through the coupled wires oscillate with well-defined anti-phase. Here, we investigate thoroughly these two criteria used to ensure a reliable phase measurement, the anti-phase relation of the two output currents and the smooth phase shift in the AB oscillation. We confirm that the well-defined anti-phase relation ensures a correct phase measurement with a quantum two-path interference. In contrast we find that even in a situation where the anti-phase relation is less well-defined, the smooth phase shift in the AB oscillation can still occur but does not give the correct transmission phase due to contributions from multiple paths. This indicates that the phase relation of the two output currents in our interferometer gives a good criterion for the measurement of the \textit{true} transmission phase while the smooth phase shift in the AB oscillation itself does not.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins

We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Full control of quadruple quantum dot circuit charge states in the single electron regime

We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Transmission Phase in the Kondo Regime Revealed in a Two-Path Interferometer

We report on the direct observation of the transmission phase shift through a Kondo correlated quantum dot by employing a new type of two-path interferometer. We observed a clear $π/2$-phase shift, which persists up to the Kondo temperature $T_{\rm K}$. Above this temperature, the phase shifts by more than $π/2$ at each Coulomb peak, approaching the behavior observed for the standard Coulomb blockade regime. These observations are in remarkable agreement with 2-level numerical renormalization group calculations. The unique combination of experimental and theoretical results presented here fully elucidates the phase evolution in the Kondo regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Aharonov-Bohm interferometry with a tunnel-coupled wire

Recent experiments [M. Yamamoto et al., Nature Nanotechnology 7, 247 (2012)] used the transport of electrons through an Aharonov-Bohm interferometer and two coupled channels (at both ends of the interferometer) to demonstrate a manipulable flying qubit. Results included in-phase and anti-phase Aharonov-Bohm (AB) oscillations of the two outgoing currents as a function of the magnetic flux, for strong and weak inter-channel coupling, respectively. Here we present new experimental results for a three terminal interferometer, with a tunnel coupling between the two outgoing wires. We show that in some limits, this system is an even simpler realization of the "two-slit" experiment. We also present a simple tight- binding theoretical model which imitates the experimental setup. For weak inter-channel coupling, the AB oscillations in the current which is reflected from the device are very small, and therefore the oscillations in the two outgoing currents must cancel each other, yielding the anti-phase behavior, independent of the length of the coupling regime. For strong inter-channel coupling, whose range depends on the asymmetry between the channels, and for a relatively long coupling distance, all except two of the waves in the coupled channels become evanescent. For the remaining running waves one has a very weak dependence of the ratio between the currents in the two channels on the magnetic flux, implying that these currents are in phase with each other.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrically tunable three-dimensional g-factor anisotropy in single InAs self-assembled quantum dots

Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Excitation spectroscopy of few-electron states in artificial diatomic molecules

We study the excitation spectroscopy of few-electron, parallel coupled double quantum dots (QDs). By applying a finite source drain voltage to a double QD (DQD), the first excited states observed in nonequilibrium charging diagrams can be classified into two kinds in terms of the total effective electron number in the DQD, assuming a core filling. When there are an odd (even) number of electrons, one (two)-electron antibonding (triplet) state is observed as the first excited state. On the other hand, at a larger source drain voltage we observe higher excited states, where additional single-particle excited levels are involved. Eventually, we identify the excited states with a calculation using the Hubbard model and, in particular, we elucidate the quadruplet state, which is normally forbidden by the spin blockade caused by the selection rule.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Aharonov-Bohm Oscillations Changed by Indirect Interdot Tunneling via Electrodes in Parallel-Coupled Vertical Double Quantum Dots

Aharonov-Bohm (AB) oscillations are studied for a parallel coupled vertical double quantum dot with a common source and drain electrode. We observe AB oscillations of current via a one-electron bonding state as the ground state and an anti-bonding state as the excited state. As the center gate voltage becomes more negative, the oscillation period is clearly halved for both the bonding and antibonding states, and the phase changes by half a period for the antibonding state. This result can be explained by a calculation that takes account of the indirect interdot coupling via the two electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electronic transport properties of few-layer graphene materials

Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Kondo effects in a triangular triple quantum dot with lower symmetries

The triangular triple quantum dot is an interesting system which can demonstrate various types of the Kondo effects, such as the one due to the local spin S=1 moment caused by the Nagaoka ferromagnetic mechanism and the SU(4) Kondo effect. We theoretically study the low-temperature properties and the Kondo energy scale of the triangular triple quantum dot, using the Wilson numerical renormalization group. We have explored a wide parameter region of the electron-filling and distortions which break the symmetry of an equilateral structure. Our results give a comprehensive overview of how the Kondo behavior varies in the different the regions in the wide parameter space of the triangular triple quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tuneable electronic properties in graphene

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The ability to embed graphene materials in a double gated structure allowed on-chip realization of relativistic tunneling experiments in single layer graphene, the discovery of a gate tunable band gap in bilayer graphene and of a gate tunable band overlap in trilayer graphene. Here we discuss recent advances in the physics and nanotechnology fabrication of double gated single- and few-layer graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot

A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dephasing in an Aharonov-Bohm interferometer containing a lateral double quantum dot induced by coupling with a quantum dot charge sensor

We theoretically investigated the dephasing in an Aharonov-Bohm interferometer containing a lateral double quantum dot induced by coupling with a quantum dot charge sensor. We employed the interpolative 2nd-order perturbation theory to include the charge sensing Coulomb interaction. It is shown that the visibility of the Aharonov-Bohm oscillation of the linear conductance decreases monotonically as the sensing Coulomb interaction increases. In particular, for a weak sensing interaction regime, the visibility decreases parabolically, and it behaves linearly for a strong sensing interaction regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal for a magnetic field induced graphene dot

Quantum dots induced by a strong magnetic field applied to a single layer of graphene in the perpendicular direction are investigated. The dot is defined by a model potential which consists of a well of depth $ΔV$ relative to a flat asymptotic part and quantum states formed from the zeroth Landau level are considered. The energy of the dot states cannot be lower than $-ΔV$ relative to the asymptotic potential. Consequently, when $ΔV$ is chosen to be about half of the gap between the zeroth and first Landau levels, the dot states are isolated energetically in the gap between Landau level 0 and Landau level -1. This is confirmed with numerical calculations of the magnetic field dependent energy spectrum and the quantum states. Remarkably, an antidot formed by reversing the sign of $ΔV$ also confines electrons but in the energy region between Landau level 0 and Landau level +1. This unusual behaviour gives an unambiguous signal of the novel physics of graphene quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling

We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Contact resistance in graphene-based devices

We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($\sim800 \pm 200 Ωμm$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Double-gated graphene-based devices

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction

We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitative agreement with theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule

We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot

Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground and excited states with opposite spins. The magnetic angular dependence of the SOI energy falls on an absolute cosine function for azimuthal rotation, and a cosine-like function for tilting rotation. The SOI energy is even quenched at a specific rotation. These angular dependence compare well to calculation of Rashba SOI in a two-dimensional harmonic potential.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings

We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spins in few-electron quantum dots

This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to electrical measurements. Furthermore, experimental techniques are discussed that allow for: (1) the rotation of an electron spin into a superposition of up and down, (2) the measurement of the quantum state of an individual spin and (3) the control of the interaction between two neighbouring spins by the Heisenberg exchange interaction. Finally, the physics of the relevant relaxation and dephasing mechanisms is reviewed and experimental results are compared with theories for spin-orbit and hyperfine interactions. All these subjects are directly relevant for the fields of quantum information processing and spintronics with single spins (i.e. single-spintronics).

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Micro-magnets for coherent control of spin-charge qubit in lateral quantum dots

A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot's orbitals. Operation speed and gate fidelity are related to device parameters. Sub 100 ns $π$ pulse duration can be achieved with lattice fluctuations coherence time of 4 ms for GaAs.

0 citations0 reviewsNo code linkedOpen access