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G. Allison

G. Allison appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-ph

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Published work

5 published item(s)

preprint2016arXiv

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Footprints of hyperfine, spin-orbit, and decoherence effects in Pauli spin blockade

We detect in real time inter-dot tunneling events in a weakly coupled two electron double quantum dot in GaAs. At finite magnetic fields, we observe two characteristic tunneling times, T_d and T_b, belonging to, respectively, a direct and a blocked (spin-flip-assisted) tunneling. The latter corresponds to lifting of a Pauli spin blockade and the tunneling times ratio eta=T_b/T_d characterizes the blockade efficiency. We find pronounced changes in the behavior of eta upon increasing the magnetic field, with eta increasing, saturating and increasing again. We explain this behavior as due to the crossover of the dominant blockade lifting mechanism from the hyperfine to spin-orbit interactions and due to a change in the contribution of the charge decoherence.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.

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