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Researcher profile

P. Karmakar

P. Karmakar contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2013arXiv

Nanopattern on Carbon and by Carbon

We have reported nanopattern formation on carbon thin film and Si(100) surfaces by low energy inert and carbon ion beams. It is interesting to observe the role of carbon as target as well as projectile for nano patterning. Using carbon thin film as target, nano patterns of carbon are formed by inert (Ar+) and self (C+) ion bombardment, whereas carbon ion beam is used to form well ordered Si nano ripple structure in a cost effective way where implanted carbon plays an important role to form Si ripple in relatively lower fluence than the inert projectile.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Key factors of ion induced nanopatterning

We have reported the dependence of projectile mass, chemical reactivity and effect of molecular beams on the ion induced nano structure formation, when 8 keV He1+, N1+, O1+, Ar1+ atomic ions and 16 keV N21+ and O21+ molecular ions are bombarded on the Si(100) surface at an incidence angle of 60^{\circ}. Atomic force microscopy (AFM) measurement shows that the initiation and growth of ripple structures are determined not only by the collision cascades but also by the chemical reactivity and molecular state of the projectiles. This experimental investigation explores the necessary requirements for ion induced controlled nanopatterning.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ripple topography on thin ZnO films by grazing and oblique incidence ion sputtering

We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O1+ bombardment at impact angles of 80{\degree} and 60{\degree}, varying the ion fluence from 5{times}10^16 to 1{\times}10^18 ions/cm2. At 800 the ripples are oriented along the ion beam direction whereas at 600 it is perpendicular to the ion beam direction. The developed ion induced structures are characterized by Atomic Force Microscopy (AFM) and the alignment, variation of rms roughness, wavelength and correlation length of the structures are discussed with the existing model and basic concept of ion surface interaction.

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preprint2010arXiv

Projectile's mass, reactivity and molecular dependence on ion nanostructuring

We have reported the dependence of projectile mass along with the chemical reactivity and nonlinear effects on ion beam induced nano structure formation when 8 keV He1+, N1+, O1+, Ar1+ atomic ions and 16 keV N21+ and O21+ molecular ions are bombarded on the Si (100) surface at an incidence angle of 600. Ex situ atomic force microcopy (AFM) measurements reveals the ripple structure development of various forms and dimensions depending on the projectiles mass, chemical reactivity and molecular state. This experimental study explores the necessary requirements for ion induced nanopatterning and their control.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Coulomb explosion sputtering of selectively oxidized Si

We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where ripple structures are formed and one side of each ripple gets more oxidized. It is observed that higher the potential energy of Arq+ ion, higher the sputtering yield of the non conducting (oxide) side of the ripple as compared to the semiconducting side. The results are explained in terms of Coulomb explosion model where potential sputtering depends on the conductivity of the ion impact sites.

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