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Researcher profile

V. Naik

V. Naik contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Nanopattern on Carbon and by Carbon

We have reported nanopattern formation on carbon thin film and Si(100) surfaces by low energy inert and carbon ion beams. It is interesting to observe the role of carbon as target as well as projectile for nano patterning. Using carbon thin film as target, nano patterns of carbon are formed by inert (Ar+) and self (C+) ion bombardment, whereas carbon ion beam is used to form well ordered Si nano ripple structure in a cost effective way where implanted carbon plays an important role to form Si ripple in relatively lower fluence than the inert projectile.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ripple topography on thin ZnO films by grazing and oblique incidence ion sputtering

We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O1+ bombardment at impact angles of 80{\degree} and 60{\degree}, varying the ion fluence from 5{times}10^16 to 1{\times}10^18 ions/cm2. At 800 the ripples are oriented along the ion beam direction whereas at 600 it is perpendicular to the ion beam direction. The developed ion induced structures are characterized by Atomic Force Microscopy (AFM) and the alignment, variation of rms roughness, wavelength and correlation length of the structures are discussed with the existing model and basic concept of ion surface interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Coulomb explosion sputtering of selectively oxidized Si

We have studied multiply charged Arq+ ion induced potential sputtering of a unique system comprising of coexisting Silicon and Silicon oxide surfaces. Such surfaces are produced by oblique angle oxygen ion bombardment on Si(100), where ripple structures are formed and one side of each ripple gets more oxidized. It is observed that higher the potential energy of Arq+ ion, higher the sputtering yield of the non conducting (oxide) side of the ripple as compared to the semiconducting side. The results are explained in terms of Coulomb explosion model where potential sputtering depends on the conductivity of the ion impact sites.

0 citations0 reviewsNo code linkedOpen access