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Researcher profile

Nzar Rauf Abdullah

Nzar Rauf Abdullah contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Effects of coupling strength of the electron-photon and the photon-environment interactions on the electron transport through multiple-resonances of a double quantum dot system in a photon cavity

We study electron transport properties through a double quantum dot (DQD) system coupled to a single mode photon cavity, DQD-cavity. The DQD system has a complex multilevel energy spectrum, in which by tuning the photon energy several anti-crossings between the electron states of the DQD system and photon dressed states are produced, which have not been seen in a simple two level DQD system. Three different regions of the photon energy are studied based on anti-crossings, where the photon energy ranges are classified as "low", "intermediate", and "high". The anti-crossings represent multiple Rabi-resonances, which lead to a current dip in the electron transport at the "intermediate" photon energy. Increasing the electron-photon coupling strength, $g_γ$, the photon exchanges between the anti-crossing states are changed leading to a dislocation of the multiple Rabi resonance states. Consequently, the current dip at the intermediate photon energy is further reduced. Additionally, we tune the cavity-environment coupling, $κ$, to see how the transport properties in the strong coupling regime, g$_γ>κ$, are changed for different directions of the photon polarization. Increasing $κ$ with a constant value of $g_γ$, a current enhancement in the intermediate photon energy is found, and a reduction in the current is seen for the "high" photon energy range. The current enhancement in the intermediate photon energy is caused by the weakening of the multiple Rabi-resonance in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic and Optical properties of Metallic Nitride: A comparative study between the MN (M=Al, Ga, In, Tl) monolayers

The electronic and the optical properties of metallic nitride (MN) monolayers are studied using a DFT formalism. In most of these monolayers, the electron density of the metallic atoms is much higher than that of the nitride atoms, and ionic, covalent, and metallic bonds are found in M-N bonds, resulting in fascinating electronic and optical properties. The optical band gap is varied from almost $0.0$ to $3.0$~eV for the MN monolayers depending on the bond type between the metallic and the nitride atoms, as well as the contribution of the type of orbitals around the Fermi energy. The optical properties such as the dielectric function, the excitation spectra, the refractive index, the reflectivity, and the optical conductivity of MN monolayers are calculated. The excitation energy and static dielectric constant are found to be inversely proportional to the band gap at low photon energy. The MN monolayers with a large band gap have good visible light functionality, while the MN monolayers with a lower band gap are found to be active in the infrared region. Furthermore, it is shown that the optical properties of MN monolayers show a strong anisotropy with respect to the polarization of the incoming light. Consequently, our results for the optical properties of MN monolayers show that they could be beneficial in optoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Enhanced ultraviolet absorption in BN monolayers caused by tunable buckling

The optical properties of a hexagonal Boron Nitride (BN) monolayer across the UV spectrum are studied by tuning its planar buckling. The strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat BN monolayer can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization by increasing the planar buckling. This gives rise to the $s$- and $p$-orbital contributions to form a density of states around the Fermi energy, and these states dislocate to a lower energy in the presence of an increased planar buckling. Consequently, the wide band gap of a flat BN monolayer is reduced to a smaller band gap in a buckled BN monolayer enhancing its optical activity in the Deep-UV region. The optical properties such as the dielectric function, the reflectivity, the absorption, and the optical conductivity spectra are investigated. It is shown that the absorption rate can be enhanced by $(12\text{-}15)\%$ for intermediate values of planar buckling in the Deep-UV region, and $(15\text{-}20)\%$ at higher values of planar buckling in the near-UV region. Furthermore, the optical conductivity is enhanced by increased planar buckling in both the visible and the Deep-UV regions depending on the direction of the polarization of the incoming light. Our results may be useful for optoelectronic BN monolayer devices in the UV range including UV spectroscopy, deep-UV communications, and UV photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Photon and magnetic field controlled electron transport of a multiply-resonant photon-cavity double quantum dot system

We study electron transport through double quantum dots (DQD) coupled to a cavity with a single photon mode. The DQD is connected to two electron reservoirs, and the total system is under an external perpendicular magnetic field. The DQD system exhibits a complex multi-level energy spectrum. By varying the photon energy, several anti-crossings between photon dressed electron states of the DQD-cavity system are found at low strength of the magnetic field. The anti-crossings are identified as multiple Rabi resonances arising from the photon exchange between these states. As the results, a dip in the current is seen caused by the multiple Rabi resonances. By increasing the strength of the external magnetic field, a dislocation of the current dip to a lower photon energy is found and the current dip can be diminished. The interplay of the strength of the magnetic field and the geometry of the states the DQD system can weaken the multiple Rabi resonances in which the exchange of photon between the anti-crossings is decreased. We can therefore confirm that the electron transport behavior in the DQD-cavity system can be controlled by manipulating the external magnetic field and the photon cavity parameters.

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preprint2022arXiv

Study of the buckling effects on the electrical and optical properties of the group III-Nitride monolayers

We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $Δ$. By tuning the $Δ$, the strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat form of these monolayers can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization. Consequently, the band gaps of the monolayers are tuned due to a dislocation of the $s$- and $p$-orbitals towards the Fermi energy. The band gaps decrease with increasing $Δ$ for those flat monolayers, which have a band gap greater than $1.0$ eV, while no noticeable change or a flat dispersion of the band gap is seen for the flat monolayers, that have a band gap less than $1.0$ eV. The decreased band gap causes a decrease in the excitation energy, and thus the static dielectric function, refractive index, and the optical conductivity are increased. In contrast, the flat band gap dispersion of few monolayers in the group III-Nitride induces a reduction in the static dielectric function, the refractive index, and the optical conductivity. We therefore confirm that tuning of the planar buckling can be used to control the physical properties of these monolayers, both for an enhancement and a reduction of the optical properties. These results are of interest for the design of optoelectric devices in nanoscale systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature dependence of the single photon source efficiency based on QD-cQED

We study a photonic circuit consisting of a quantum dot, QD, coupled to a photon cavity over a wide range of temperature up to room temperature. A key component of such a system is presented here in the form of a Purcell-enhanced single-photon source based on Cavity Quantum Electrodynamics, cQED. We use a real set of pure dephasing data extracted from experimental measurements of InGaAs QD to calculate the effective QD-cavity coupling strength, the Purcell factor, and the single photon efficiency emerged from the QD-cavity system in the cases without and with detuning. In the non-detuned system, the effective coupling strength between the QD and the resonator decreases with increasing temperature, results in a decrease in efficiency. However, when the temperature of the QD-cavity system increases under Purcell effect conditions, the detuned QD-cavity system induces spontaneous emission rate enhancement. As a result, we found that the increase in efficiency can be obtained under a certain condition, when the maximum effective coupling strength and the Purcell factor are related to the spontaneous emission and the pure dephasing rates. Additionally, the influences of the pumping mechanism on the efficiency of the QD-system were examined and showed that the pumping process can be used to further increase in efficiency. Our results can be advantageous for advanced quantum optics applications once temperature is taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thermal transport controlled by intra- and inter-dot Coulomb interactions in sequential and cotunneling serially-coupled double quantum dots

We study thermoelectric transport through a serial double quantum dot (DQD) coupled to two metallic leads with different thermal energies. We take into account the electron sequential and cotunneling effects via different master equation approaches. In the absence of intra- and inter-dot Coulomb interactions, a small peak in thermoelectric and heat currents is found for $E_{\rm L} \text{=} E_{\rm R}$ indicating the Coulomb blockade DQD regime, where $E_{\rm L}(E_{\rm R})$ is the energy of the state of the left(right) quantum dot. In the presence of intra- and inter-dot Coulomb interactions with strengths U$_{\rm intra}$, and U$_{\rm inter}$, respectively, avoided crossings or resonance energies between the intra- and the inter-dot two-electron states, 2ES, are found. These resonances induce extra transport channels through the DQD leading to strong side peaks in the thermoelectric and heat currents at $ E_{\rm L} \text{-} E_{\rm R} = \pm (U_{\rm intra} \text{-} U_{\rm inter})$ in addition to the main peak generated at $E_{\rm L} \text{=} E_{\rm R}$. The current side peaks are enhanced by increased strength of the Coulomb interactions. Interestingly, the current side peaks are enhanced when cotunneling terms are considered in which the resonances of the 2ESs assist the electron cotunneling process through the system. Furthermore, the issue of coherences is carefully checked in the DQD-leads system via different approaches to the master equation, which are the Pauli, the Redfield, a first order Lindblad, and the first- and second order von-Neumann methods. We realize that the Pauli method gives a wrong results for the thermoelectric transport when the role of the coherences is relevant.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thermal transport driven by Coulomb interactions in quantum dots: Enhancement of thermoelectric and heat currents

We investigate thermal transport in a serial asymmetric double quantum dot (DQD) coupled to two electron reservoirs with different temperatures. The inter- and intra-Coulomb interactions are taken into account in a Coulomb blockade DQD where the electron sequential tunneling via four different master equation approaches is considered. In the absence of Coulomb interactions, a neglectable thermoelectric and heat currents is found identifying as the Coulomb blockade DQD regime. In the presence of Coulomb interactions, intra- and inter-Coulomb interactions, crossings energies between the intra- and the inter-dot many-body electron states are observed. The crossings induce extra channels in the energy spectrum of the DQD that enhance thermoelectric and heat currents. The extra channels form several peaks in the thermoelectric and heat currents in which intensity and position of the peaks depend on strength of the inter- and intra-dot Coulomb interactions. In addition, the problem of coherences and incoherences are studied using different approaches to the master equation, which are the first order von-Neumann, the Redfield, a first order Lindblad, and the Pauli methods. We find that all methods give almost similar thermal transport when the role of the coherences is irrelevant in the DQD.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Controlling thermoelectric, heat, and energy currents through a quantum dot in sequential and cotunneling Coulomb-blockade regimes

Thermal transport through a Coulomb-blockade quantum dot (QD) coupled to two metallic leads is studied using five different approaches to the master equation in which sequential and coutuneling terms are taken into account. In the presence of intradot Coulomb interactions, a plateau in the thermo-particle, the heat, and the energy currents is seen. The current plateau diminishes at a high thermal bias between the leads. It is shown that the Pauli, the Redfield, the Lindblad-type equation with first order tunneling rates, and first-order von-Neumann master equations give very similar thermal transport indicating the conservation of coherency in the electron transport in sequential tunneling between the QD and leads. In contrast, the thermal transport is suppressed when coutuneling processes are taken into account via a second-order von-Neumann master equation. The consideration of second order effects with respect to the QD-leads coupling brings in a wealth of virtual processes at the contact to each lead. These virtual processes directly weaken the effects of the contribution of the first order direct processes to the overall transport, and introduce important other aspects of the transport, as level broadening, energy shifts, and lifetimes in the time-domain. As a result the current plateau formed via the Coulomb interaction diminishes, when second order and cotunneling processes are considered.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Conversion of the stacking orientation of bilayer graphene due to \break the interaction of BN-dopants

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In the presence of the attractive interaction, an AA-stacking of BN-codoped BLG is formed with a less stable structure leading to weak mechanical properties of the system. Low values of the Young modulus, the ultimate strength and stress, and the fracture strength are observed comparing to a pure BLG. In addition, the attractive interaction induces a small bandgap that deteriorates the thermal and optical properties of the system. In contrast, in the presence of a repulsive interaction between the B and N atoms, the AA-stacking is converted to a AB-stacking with a more stable structure. Improved mechanical properties such as higher Young modulus, the ultimate strength and stress, fracture strength are obtained comparing to the AA-stacked BN-codoped BLG. Furthermore, a larger bandgap of the AB-stacked bilayer enhances the thermal and the optical characteristics of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

DFT study of tunable electronic, magnetic, thermal, and optical properties of a Ga$_2$Si$_6$ monolayer

The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied doping distances, and atomic dopant interactions for the same substitutional doping concentration. The results indicate that the Ga atoms alter the band structure and the band gap in the silicene monolayer at various concentrations, which can be referred back to to the repulsive interaction of Ga-Ga atoms. The band gap is determined by the interaction strength of the Ga-Ga atoms, the Coulomb repulsive force, and it does not always widen as doping concentration increases. In addition, our spin-polarized DFT calculations show that these monolayers behave like nonmagnetic semiconductors, exhibiting symmetric spin-up and spin-down channels. The repulsive interaction between the Ga atoms causes a symmetry breaking of the monolayers. As a consequence, a Ga dopant can open the band gap, leading to better thermoelectric properties such as the Seebeck coefficient and the figure of merit, as well as an increase in the optical response. As a result of our estimates, Ga doped silicene monolayers could be advantageous in thermoelectric and optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Enhanced electronic and optical responses of Nitrogen- or Boron-doped BeO monolayer: First principle computation

In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using substitutional N or B dopant atoms, we find that the band gap can be tuned and the optical properties can be improved. In the N(B)-doped BeO monolayer, the Fermi energy slightly crosses the valence(conduction) band forming a degenerate semiconductor structure. The N or B atoms thus generate new states around the Fermi energy increasing the optical conductivity in the visible light region. Furthermore, the influences of dopant atoms on the electronic structure, the stability, the dispersion energy, the density of states, and optical properties such as the plasmon frequency, the excitation spectra, the dielectric functions, the static dielectric constant, and the electron energy loss function are discussed for different directions of polarizations for the incoming electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High thermoelectric and optical conductivity driven by the interaction of Boron and Nitrogen dopant atoms with a 2D monolayer Beryllium Oxide

The electronic, thermal and optical properties of a monolayer BeO with Boron (B) and Nitrogen (N) co-dopant atoms are studied by means of a density functional theory computation. Our calculations reveal that BeO with BN-codopant atoms can give rise to more effective and outstanding performance for the thermal and optical responses. More significantly, the monolayer BeO with BN codopant atoms becomes a semiconductor with a direct band gap in comparison with the insulator behavior of pristine BeO. The particular attention of this work is paid to the influence of the atomic configuration and the interaction of the B and N dopant atoms with BeO. The interaction of the B and N atoms with the BeO monolayer diminishes degenerate energy states forming flat bands. It is also found that there is a strong attractive interaction between the O and N atoms forming a strong sigma bond breaking the symmetry of BeO structure. Consequently, the band gap is reduced leading to a semiconductor behavior with improved thermoelectric properties such as the Seebeck coefficient and the figure of merit. The reduced band gap and the flat bands induce a high optical responses such as the refractive index, the reflectivity and the optical conductivity in the visible light region. In addition, the anisotropy of a monolayer BeO with B and N atoms regarding different direction of electromagnetic polarization is presented. We anticipate that our results can be useful for design of both thermoelectric and optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Modulation of electronic and thermal proprieties of TaMoS$_2$ by controlling the repulsive interaction between Ta dopant atoms

We theoretically study the electronic and the thermal characteristics of Tantalum, Ta, doped Molybdenum disulfide, MoS$_2$, using density functional theory. It has been shown that the MoS$_2$ monolayer is not a good material for thermoelectric devices due to its relatively large band gap. We find that a Ta doped MoS$_2$ forming a TaMoS$_2$ monolayer can be useful for thermoelectric devices. The particular attention of this work is paid to the interaction effect between the Ta atoms in the MoS$_2$ structure. We find that the interaction type is repulsive. It introduces an asymmetry in the density of states, DOS, reducing the band gap. In the presence of a strong repulsive interaction of Ta-Ta atoms, new states in the DOS around the Fermi energy are found leading to a reduction of the band gap. Consequently, a high Seebeck coefficient and figure of merit are seen over a wide range of energy around the Fermi energy. In contrast, a small reduction of the band gap and a vanishing degeneracy of the valence and the conduction bands are observed for the case of a weak Ta-Ta repulsive interaction leading to less promising thermoelectric properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unified approach to cyclotron and plasmon resonances in a periodic 2DEG hosting the Hofstadter butterfly

We present theoretical calculations for the cyclotron resonance and various magnetoplasmon modes of a Coulomb interacting two-dimensional GaAs electron gas (2DEG) modulated as a lateral superlattice of quantum dots subjected to an external perpendicular constant magnetic field. We use a real-time excitation approach based on the Liouville-von Neumann equation for the density operator, that can go beyond linear response delivering information of all longitudinal and transverse collective modes of interest to the same order. We perform an extensive analysis of the coexisting collective modes due to the lateral confinement and the magnetic field for a different number of electrons in each dot. In the limit of vanishing dot modulation of the 2DEG we find signs of the structure of the Hofstadter butterfly in the excitation spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effects of bonded and non-bonded B/N codoping of graphene on its stability,\break interaction energy, electronic structure, and power factor

We model boron and nitrogen doped/codoped monolayer graphene to study its stability, interaction energy, electronic and thermal properties using density functional theory. It is found that a doped graphene sheet with non-bonded B or N atoms induces an attractive interaction and thus opens up the bandgap. Consequently, the power factor is enhanced. Additionally, bonded B or N atoms in doped graphene generate a repulsive interaction leading to a diminished bandgap, and thus a decreased power factor. We emphasis that enhancement of the power factor is not very sensitive to the concentration of the boron and nitrogen atoms, but it is more sensitive to the positions of the B or N atoms in ortho, meta, and para positions of the hexagonal structure of graphene. In the B and N codoped graphene, the non-bonded dopant atoms have a weak attractive interaction and interaction leading to a small bandgap, while bonded doping atoms cause a strong attractive interaction and a large bandgap. As a result, the power factor of the graphene with non-bonded doping atoms is reduced while it is enhanced for graphene with bonded doping atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic, thermal, and optical properties of graphene like SiC$_x$ structures: Significant effects of Si atom configurations

We investigate the electronic, thermal, and optical characteristics of graphene like SiC$_x$ structure using model calculations based on density functional theory. The change in the energy bandgap can be tuned by the Si atomic configuration, rather than the dopants ratio. The effects of the concentration of the Si atoms and the shape of supercell are kept constant, and only the interaction effects of two Si atoms are studied by varying their positions. If the Si atoms are at the same sublattice positions, a maximum bandgap is obtained leading to an increased Seebeck coefficient and figure of merit. A deviation in the Wiedemann-Franz ratio is also found, and a maximum value of the Lorenz number is thus discovered. Furthermore, a significant red shift of the first peak of the imaginary part of the dielectric function towards the visible range of the electromagnetic radiation is observed. On the other hand, if the Si atoms are located at different sublattice positions, a small bandgap is seen because the symmetry of sublattice remains almost unchanged. Consequently, the Seebeck coefficient and the dielectric function are only slightly changed compared to pristine graphene. In addition, the electron energy loss function is suppressed in Si-doped graphene. These unique variations of the thermal and the optical properties of Si-doped graphene are of importance to understand experiments relevant to optoelectronic applications.

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preprint2020arXiv

Interlayer interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC$_{14}$N and Si$_{2}$C$_{14}$

We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the interlayer interactions play important roles shaping the physical properties of the systems. We find the interlayer interaction in Si$_2$C$_{14}$ to be repulsive due to the interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive interlayer interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive interlayer interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive interaction decreases the Young modulus while the attractive interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $π{\text -}π^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $π{\text -}π^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.

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preprint2020arXiv

Modeling electronic, mechanical, optical and thermal properties of graphene-like BC$_6$N materials: Role of prominent BN-bonds

We model monolayer graphene-like materials with BC$_6$N stoichiometry where the bonding between the B and the N atoms plays an important role for their physical and chemical properties. Two types of BC$_6$N are found based on the BN bonds: In the presence of BN bonds, an even number of $π$-bonds emerges indicating an aromatic structure and a large direct bandgap appears, while in the absence of BN bonds, an anti-aromatic structure with an odd-number of $π$-bonds is found resulting a direct small bandgap. The stress-strain curves shows high elastic moduli and tensile strength of the structures with BN-bonds, compared to structures without BN-bonds. Self-consistent field calculations demonstrate that BC$_6$N with BN-bonds is energetically more stable than structures without BN-bonds due to a strong binding energy between the B and the N atoms, while their phonon dispersion displays that BC$_6$N without BN-bonds has more dynamical stability. Furthermore, all the BC$_6$N structures considered show a large absorption of electromagnetic radiation with polarization parallel to the monolayers in the visible range. Finer detail of the absorption depend on the actual structures of the layers. A higher electronic thermal conductivity and specific heat are seen in BC$_6$N systems caused by hot carrier--assisted charge transport. This opens up a possible optimization for bolometric applications of graphene based material devices.

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preprint2020arXiv

Spin-polarised DFT modeling of electronic, magnetic, thermal and optical properties of silicene doped with transition metals

The geometric, electronic, magnetic, thermal, and optical properties of transition metal (TM) doped silicene are systematically explored using spin-dependent density functional computation. We find that the TM atoms decrease the buckling degree of the silicene structure caused by the interaction between the dopant TM atoms and the Si atoms in the silicene layer plane which is quite strong. In some TM-silicenes, parallel bands and the corresponding van Hove singularities are observed in the electronic band structure without and with spin-polarization. These parallel bands are the origin of most of the transitions in the visible and the UV regions. A high Seebeck coefficient is found in some TM-silicene without spin-polarization. In the presence of emergent spin-polarization, a reduction or a magnification of the Seebeck coefficient is seen due to a spin-dependent phase transition. We find that the preferred state is a ferromagnetic state with a very high Curie temperature. We observe a strong interaction and large orbital hybridization between the TM atoms and the silicene. As a result, a high magnetic moment emerges in TM-silicene. Our results are potentially beneficial for thermospin, and optoelectronic nanodevices.

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preprint2019arXiv

Oscillations in electron transport caused by multiple resonances in a quantum dot-QED system in the steady-state regime

We model the electron transport current as the photon energy is swept through several resonances of a multi-level quantum dot, embedded in a short quantum wire, coupled to photon cavity. We use a Markovian quantum master equation appropriate for the long-time evolution and include the electron-electron and both the para- and the diamagnetic electron-photon interactions via diagonalization in a truncated many-body Fock space. Tuning the photon energy, several anti-crossings caused by Rabi-splitting in the energy spectrum of the quantum dot system are found. The strength of the Rabi-splittings and the photon-exchange between the resonant states depend on the polarization of the cavity photon field. We observe oscillations of the charge in the system and several resonant transport current peaks for the photon energies corresponding to the resonances in the steady-state regime.

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preprint2019arXiv

The interplay of electron-photon and cavity-environment coupling on the electron transport through a quantum dot system

We theoretically investigate the characteristics of the electron transport through a two-dimensionala quantum dot system in the $xy$-plane coupled to a photon cavity and a photon reservoir, the environment. The electron-photon coupling, $g_γ$, and the cavity-reservoir coupling, $κ$, are tuned to study the system in the weak, $g_γ \leq κ$, and the strong coupling regime, $g_γ > κ$. An enhancement of current is both seen with increasing $g_γ$ and $κ$ in the weak coupling regime for both $x$- and $y$-polarization of the photon field. This is a direct consequence of the Purcell effect. The current enhancement is due to the contribution of the photon replica states to the electron transport in which intraband transitions play an important role. The properties of the electron transport are drastically changed in the strong coupling regime with an $x$-polarized photon field in which the current is suppressed with increasing $g_γ$, but it is still increasing with $κ$. This behavior of the current is related to the population of purely electronic states and depopulation of photon replica states.

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preprint2014arXiv

Delocalization of electrons by cavity photons in transport through a quantum dot molecule

We present new results on cavity-photon-assisted electron transport through two lateral quantum dots embedded in a finite quantum wire. The double quantum dot system is weakly connected to two leads and strongly coupled to a single quantized photon cavity mode with initially two linearly polarized photons in the cavity. Including the full electron-photon interaction, the transient current controlled by a plunger-gate in the central system is studied by using quantum master equation. Without a photon cavity, two resonant current peaks are observed in the range selected for the plunger gate voltage: The ground state peak, and the peak corresponding to the first-excited state. The current in the ground state is higher than in the first-excited state due to their different symmetry. In a photon cavity with the photon field polarized along or perpendicular to the transport direction, two extra side peaks are found, namely, photon-replica of the ground state and photon-replica of the first-excited state. The side-peaks are caused by photon-assisted electron transport, with multiphoton absorption processes for up to three photons during an electron tunneling process. The inter-dot tunneling in the ground state can be controlled by the photon cavity in the case of the photon field polarized along the transport direction. The electron charge is delocalized from the dots by the photon cavity. Furthermore, the current in the photon-induced side-peaks can be strongly enhanced by increasing the electron-photon coupling strength for the case of photons polarized along the transport direction.

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preprint2013arXiv

Electron transport through a quantum dot assisted by cavity photons

We investigate transient transport of electrons through a single-quantum-dot controlled by a plunger gate. The dot is embedded in a finite wire that is weakly coupled to leads and strongly coupled to a single cavity photon mode. A non-Markovian density-matrix formalism is employed to take into account the full electron-photon interaction in the transient regime. In the absence of a photon cavity, a resonant current peak can be found by tuning the plunger gate voltage to lift a many-body state of the system into the source-drain bias window. In the presence of an $x$-polarized photon field, additional side peaks can be found due to photon-assisted transport. By appropriately tuning the plunger-gate voltage, the electrons in the left lead are allowed to make coherent inelastic scattering to a two-photon state above the bias window if initially one photon was present in the cavity. However, this photon-assisted feature is suppressed in the case of a $y$-polarized photon field due to the anisotropy of our system caused by its geometry.

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preprint2010arXiv

Time-dependent magnetotransport in an interacting double quantum wire with window coupling

We present a double quantum wire system containing a coupling element in the middle barrier between the two parallel quantum wires. We explicitly account for the finite length of the double quantum wire with a time-dependent switching-on potential coupling the double-wire system and the leads. By tuning the magnetic field and the coupling window between the wires, we analyze the time-dependent current and the charge distribution of the Coulomb interacting many-electron states in order to explore inter-wire transfer effects for developing efficient quantum interference nanoelectronics.

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