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Researcher profile

Hunar Omar Rashid

Hunar Omar Rashid contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2022arXiv

Study of the buckling effects on the electrical and optical properties of the group III-Nitride monolayers

We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $Δ$. By tuning the $Δ$, the strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat form of these monolayers can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization. Consequently, the band gaps of the monolayers are tuned due to a dislocation of the $s$- and $p$-orbitals towards the Fermi energy. The band gaps decrease with increasing $Δ$ for those flat monolayers, which have a band gap greater than $1.0$ eV, while no noticeable change or a flat dispersion of the band gap is seen for the flat monolayers, that have a band gap less than $1.0$ eV. The decreased band gap causes a decrease in the excitation energy, and thus the static dielectric function, refractive index, and the optical conductivity are increased. In contrast, the flat band gap dispersion of few monolayers in the group III-Nitride induces a reduction in the static dielectric function, the refractive index, and the optical conductivity. We therefore confirm that tuning of the planar buckling can be used to control the physical properties of these monolayers, both for an enhancement and a reduction of the optical properties. These results are of interest for the design of optoelectric devices in nanoscale systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Conversion of the stacking orientation of bilayer graphene due to \break the interaction of BN-dopants

A conversion of AA- to AB-stacking bilayer graphene (BLG) due to interlayer interaction is demonstrated. Two types of interlayer interactions, an attractive and a repulsive, between the Boron and Nitrogen dopant atoms in BLG are found. In the presence of the attractive interaction, an AA-stacking of BN-codoped BLG is formed with a less stable structure leading to weak mechanical properties of the system. Low values of the Young modulus, the ultimate strength and stress, and the fracture strength are observed comparing to a pure BLG. In addition, the attractive interaction induces a small bandgap that deteriorates the thermal and optical properties of the system. In contrast, in the presence of a repulsive interaction between the B and N atoms, the AA-stacking is converted to a AB-stacking with a more stable structure. Improved mechanical properties such as higher Young modulus, the ultimate strength and stress, fracture strength are obtained comparing to the AA-stacked BN-codoped BLG. Furthermore, a larger bandgap of the AB-stacked bilayer enhances the thermal and the optical characteristics of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Enhanced electronic and optical responses of Nitrogen- or Boron-doped BeO monolayer: First principle computation

In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using substitutional N or B dopant atoms, we find that the band gap can be tuned and the optical properties can be improved. In the N(B)-doped BeO monolayer, the Fermi energy slightly crosses the valence(conduction) band forming a degenerate semiconductor structure. The N or B atoms thus generate new states around the Fermi energy increasing the optical conductivity in the visible light region. Furthermore, the influences of dopant atoms on the electronic structure, the stability, the dispersion energy, the density of states, and optical properties such as the plasmon frequency, the excitation spectra, the dielectric functions, the static dielectric constant, and the electron energy loss function are discussed for different directions of polarizations for the incoming electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Modulation of electronic and thermal proprieties of TaMoS$_2$ by controlling the repulsive interaction between Ta dopant atoms

We theoretically study the electronic and the thermal characteristics of Tantalum, Ta, doped Molybdenum disulfide, MoS$_2$, using density functional theory. It has been shown that the MoS$_2$ monolayer is not a good material for thermoelectric devices due to its relatively large band gap. We find that a Ta doped MoS$_2$ forming a TaMoS$_2$ monolayer can be useful for thermoelectric devices. The particular attention of this work is paid to the interaction effect between the Ta atoms in the MoS$_2$ structure. We find that the interaction type is repulsive. It introduces an asymmetry in the density of states, DOS, reducing the band gap. In the presence of a strong repulsive interaction of Ta-Ta atoms, new states in the DOS around the Fermi energy are found leading to a reduction of the band gap. Consequently, a high Seebeck coefficient and figure of merit are seen over a wide range of energy around the Fermi energy. In contrast, a small reduction of the band gap and a vanishing degeneracy of the valence and the conduction bands are observed for the case of a weak Ta-Ta repulsive interaction leading to less promising thermoelectric properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effects of bonded and non-bonded B/N codoping of graphene on its stability,\break interaction energy, electronic structure, and power factor

We model boron and nitrogen doped/codoped monolayer graphene to study its stability, interaction energy, electronic and thermal properties using density functional theory. It is found that a doped graphene sheet with non-bonded B or N atoms induces an attractive interaction and thus opens up the bandgap. Consequently, the power factor is enhanced. Additionally, bonded B or N atoms in doped graphene generate a repulsive interaction leading to a diminished bandgap, and thus a decreased power factor. We emphasis that enhancement of the power factor is not very sensitive to the concentration of the boron and nitrogen atoms, but it is more sensitive to the positions of the B or N atoms in ortho, meta, and para positions of the hexagonal structure of graphene. In the B and N codoped graphene, the non-bonded dopant atoms have a weak attractive interaction and interaction leading to a small bandgap, while bonded doping atoms cause a strong attractive interaction and a large bandgap. As a result, the power factor of the graphene with non-bonded doping atoms is reduced while it is enhanced for graphene with bonded doping atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic, thermal, and optical properties of graphene like SiC$_x$ structures: Significant effects of Si atom configurations

We investigate the electronic, thermal, and optical characteristics of graphene like SiC$_x$ structure using model calculations based on density functional theory. The change in the energy bandgap can be tuned by the Si atomic configuration, rather than the dopants ratio. The effects of the concentration of the Si atoms and the shape of supercell are kept constant, and only the interaction effects of two Si atoms are studied by varying their positions. If the Si atoms are at the same sublattice positions, a maximum bandgap is obtained leading to an increased Seebeck coefficient and figure of merit. A deviation in the Wiedemann-Franz ratio is also found, and a maximum value of the Lorenz number is thus discovered. Furthermore, a significant red shift of the first peak of the imaginary part of the dielectric function towards the visible range of the electromagnetic radiation is observed. On the other hand, if the Si atoms are located at different sublattice positions, a small bandgap is seen because the symmetry of sublattice remains almost unchanged. Consequently, the Seebeck coefficient and the dielectric function are only slightly changed compared to pristine graphene. In addition, the electron energy loss function is suppressed in Si-doped graphene. These unique variations of the thermal and the optical properties of Si-doped graphene are of importance to understand experiments relevant to optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC$_{14}$N and Si$_{2}$C$_{14}$

We model bilayer graphene-like materials with Si$_2$C$_{14}$ and BC$_{14}$N stoichiometry, where the interlayer interactions play important roles shaping the physical properties of the systems. We find the interlayer interaction in Si$_2$C$_{14}$ to be repulsive due to the interaction of Si-Si atoms, and in BC$_{14}$N it is attractive due to B and N atoms for both the AA- and the AB-stacking. The repulsive interlayer interaction opens up a bandgap in Si$_2$C$_{14}$ while the attractive interlayer interaction in BC$_{14}$N induces a small indirect bandgap or overlaping of the valence conduction bands. Furthermore, the repulsive interaction decreases the Young modulus while the attractive interaction does not influence the Young modulus much. The stress-strain curves of both the AA- and the AB-stackings are suppressed compared to pure graphine bilayers. The optical response of Si$_2$C$_{14}$ is very sensitive to an applied electric field and an enrichment in the optical spectra is found at low energy. The enrichment is attributed to the bandgap opening and increased energy spacing between the $π{\text -}π^*$ bands. In BC$_{14}$N, the optical spectra are reduced due to the indirect bandgap or the overlapping of the $π{\text -}π^* $ bands. Last, a high Seebeck coefficient is observed due to the presence of a direct bandgap in Si$_2$C$_{14}$, while it is not much enhanced in BC$_{14}$N.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Modeling electronic, mechanical, optical and thermal properties of graphene-like BC$_6$N materials: Role of prominent BN-bonds

We model monolayer graphene-like materials with BC$_6$N stoichiometry where the bonding between the B and the N atoms plays an important role for their physical and chemical properties. Two types of BC$_6$N are found based on the BN bonds: In the presence of BN bonds, an even number of $π$-bonds emerges indicating an aromatic structure and a large direct bandgap appears, while in the absence of BN bonds, an anti-aromatic structure with an odd-number of $π$-bonds is found resulting a direct small bandgap. The stress-strain curves shows high elastic moduli and tensile strength of the structures with BN-bonds, compared to structures without BN-bonds. Self-consistent field calculations demonstrate that BC$_6$N with BN-bonds is energetically more stable than structures without BN-bonds due to a strong binding energy between the B and the N atoms, while their phonon dispersion displays that BC$_6$N without BN-bonds has more dynamical stability. Furthermore, all the BC$_6$N structures considered show a large absorption of electromagnetic radiation with polarization parallel to the monolayers in the visible range. Finer detail of the absorption depend on the actual structures of the layers. A higher electronic thermal conductivity and specific heat are seen in BC$_6$N systems caused by hot carrier--assisted charge transport. This opens up a possible optimization for bolometric applications of graphene based material devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-polarised DFT modeling of electronic, magnetic, thermal and optical properties of silicene doped with transition metals

The geometric, electronic, magnetic, thermal, and optical properties of transition metal (TM) doped silicene are systematically explored using spin-dependent density functional computation. We find that the TM atoms decrease the buckling degree of the silicene structure caused by the interaction between the dopant TM atoms and the Si atoms in the silicene layer plane which is quite strong. In some TM-silicenes, parallel bands and the corresponding van Hove singularities are observed in the electronic band structure without and with spin-polarization. These parallel bands are the origin of most of the transitions in the visible and the UV regions. A high Seebeck coefficient is found in some TM-silicene without spin-polarization. In the presence of emergent spin-polarization, a reduction or a magnification of the Seebeck coefficient is seen due to a spin-dependent phase transition. We find that the preferred state is a ferromagnetic state with a very high Curie temperature. We observe a strong interaction and large orbital hybridization between the TM atoms and the silicene. As a result, a high magnetic moment emerges in TM-silicene. Our results are potentially beneficial for thermospin, and optoelectronic nanodevices.

0 citations0 reviewsNo code linkedOpen access