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Researcher profile

Norbert J. Pelc

Norbert J. Pelc contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.med-phphysics.ins-det

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Published work

2 published item(s)

preprint2022arXiv

The effects of intra-detector Compton scatter on zero-frequency DQE for photon-counting CT using edge-on-irradiated silicon detectors

Background: Edge-on-irradiated silicon detectors are currently being investigated for use in photon-counting CT applications. The low atomic number of silicon leads to a significant number of incident photons being Compton scattered in the detector, depositing a part of their energy and potentially being counted multiple times. Although the physics of Compton scatter is well established, the effects of Compton interactions in the detector on image quality for an edge-on-irradiated silicon detector have still not been thoroughly investigated. Purpose: To investigate and explain effects of Compton scatter on zero-frequency DQE for photon-counting CT using edge-on-irradiated silicon detectors. Methods: We extend an existing Monte Carlo model of an edge-on-irradiated silicon detector to develop projection and image domain performance metrics for pure density and pure spectral imaging tasks. We show that the lowest energy threshold of the detector can be used as an effective discriminator of primary counts and cross-talk caused by Compton scatter. We study the developed metrics as functions of the lowest threshold energy. Results: Density imaging performance decreases monotonically as a function of the lowest threshold in both projection and image domains. Spectral imaging performance has a plateau between 0 and 10 keV and decreases monotonically thereafter, in both projection and image domain. Conclusions: Compton interactions contribute significantly to the density imaging performance of edge-on-irradiated silicon detectors. With the studied detector topology, the benefit of counting primary Compton interactions outweighs the penalty of multiple counting at all lower threshold energies. Compton interactions also contribute significantly to the spectral imaging performance for measured energies above 10 keV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detective quantum efficiency of photon-counting CdTe and Si detectors for computed tomography: a simulation study

Purpose: Developing photon-counting CT detectors requires understanding the impact of parameters such as converter material, absorption length and pixel size. We apply a novel linear-systems framework, incorporating spatial and energy resolution, to study realistic silicon (Si) and cadmium telluride (CdTe) detectors at low count rate. Approach: We compared CdTe detector designs with $0.5\times0.5\; \mathrm{mm}^2$ and $0.225\times0.225\; \mathrm{mm}^2$ pixels and Si detector designs with $0.5\times0.5\; \mathrm{mm}^2$ pixels of 30 and 60 mm active absorption length, with and without tungsten scatter blockers. Monte-Carlo simulations of photon transport were used together with Gaussian charge sharing models fitted to published data. Results: For detection in a 300 mm thick object at 120 kVp, the 0.5 mm and 0.225 mm pixel CdTe systems have 28-41 $\%$ and 5-29 $\%$ higher DQE, respectively, than the 60 mm Si system with tungsten, whereas the corresponding numbers for two-material decomposition are 2 $\%$ lower to 11 $\%$ higher DQE and 31-54 $\%$ lower DQE compared to Si. We also show that combining these detectors with dual-spectrum acquisition is beneficial. Conclusions: In the low-count-rate regime, CdTe detector systems outperform the Si systems for detection tasks, while silicon outperforms one or both of the CdTe systems for material decomposition.

0 citations0 reviewsNo code linkedOpen access