Source author record

N. V. Bazlov

N. V. Bazlov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

nucl-ex physics.ins-det cond-mat.mtrl-sci hep-ex

Catalog footprint

What is connected

3works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2023arXiv

Investigation of radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide

Influence of the prolonged irradiation by fission products of 252Cf radionuclide on the operational parameters of silicon-lithium Si(Li) p-i-n detectors, Si surface barrier detectors and Si planar p+n detector was investigated. The obtained results revealed a linear shift of the fission fragment peaks positions towards the lower energies with increase of the irradiation dose for all investigated detectors. The rate of the peaks shift was found to depend strongly on the detector type and the strength of the electric field in the detectors active region, but not on the temperature of irradiation (room or liquid nitrogen temperature). Based on the obtained results, the possibility of integration of the investigated types of Si semiconductor detectors in a radionuclide neutron calibration source is considered.

preprint2021arXiv

Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

preprint2016arXiv

A measurement method of a detector response function for monochromatic electrons based on the Compton scattering

In this paper we present a method of scintillation detector energy calibration using the gamma-rays. The technique is based on the Compton scattering of gamma-rays in a scintillation detector and subsequent photoelectric absorption of the scattered photon in the Ge-detector. The novelty of this method is that the source of gamma rays, the germanium and scintillation detectors are immediately arranged adjacent to each other. The method presents an effective solution for the detectors consisting of a low atomic number materials, when the ratio between Compton effect and photoelectric absorption is large and the mean path of gamma-rays is comparable to the size of the detector. The technique can be used for the precision measurements of the scintillator light yield dependence on the electron energy.