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I. S. Drachnev

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hep-ex physics.ins-det hep-ph nucl-ex astro-ph.SR astro-ph.CO cond-mat.mtrl-sci nucl-th

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preprint2023arXiv

Investigation of radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide

Influence of the prolonged irradiation by fission products of 252Cf radionuclide on the operational parameters of silicon-lithium Si(Li) p-i-n detectors, Si surface barrier detectors and Si planar p+n detector was investigated. The obtained results revealed a linear shift of the fission fragment peaks positions towards the lower energies with increase of the irradiation dose for all investigated detectors. The rate of the peaks shift was found to depend strongly on the detector type and the strength of the electric field in the detectors active region, but not on the temperature of irradiation (room or liquid nitrogen temperature). Based on the obtained results, the possibility of integration of the investigated types of Si semiconductor detectors in a radionuclide neutron calibration source is considered.

preprint2021arXiv

Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

preprint2021arXiv

Precision measurement of $^{\mathbf{210}}$Bi $β$-spectrum

The precision measurement of the $β-$spectrum shape for $^{210}$Bi (historically RaE) have been performed with a spectrometer based on semiconductor Si(Li) detector. This first forbidden non-unique transition has the transition form-factor strongly deviated from unity and knowledge of its spectrum would play an important role in low-background physics in presence of $^{210}$Pb background. The measured transition form-factor could be approximated as $S(W) = 1 + (-0.4363 \pm 0.0037) W + (0.0523 \pm 0.0010) W^2$, that is in good agreement with previous studies and has significantly increased parameter precision.

preprint2020arXiv

New limits on the resonant absorption of solar axions obtained with a $^{169}$Tm-containing cryogenic detector

A search for resonant absorption of solar axions by $^{169}$Tm nuclei was carried out. A newly developed approach involving low-background cryogenic bolometer based on Tm$_3$Al$_5$O$_{12}$ crystal was used that allowed for significant improvement of sensitivity in comparison with previous $^{169}$Tm based experiments. The measurements performed with $8.18$ g crystal during $6.6$ days exposure yielded the following limits on axion couplings: $|g_{Aγ} (g_{AN}^0 + g_{AN}^3) \leq 1.44 \times 10^{-14}$ GeV$^{-1}$ and $|g_{Ae} (g_{AN}^0 + g_{AN}^3) \leq 2.81 \times 10^{-16}$.

preprint2019arXiv

A Test of Bolometric Properties of Tm-containing Crystals as a Perspective Detector for the Solar Axion Search

The $^{169}$Tm nuclide has first nuclear level at 8.41 keV with magnetic type transition to the ground state and, therefore, can be used as a target nucleus for the search of resonant absorption of solar axions. We plan to use a Tm-containing crystal of a garnet family Tm$_3$Al$_5$O$_{12}$ as a bolometric detector in order to search for the excitation of the first nuclear level of $^{169}$Tm via the resonant absorption of solar axions. With this perspective in mind, a sample of the Tm$_3$Al$_5$O$_{12}$ crystal was grown and tested for its bolometric and optical properties. Measurements of chemical and/or radioactive contaminations were performed as well. In this paper we present the test results and estimate the requirements for a future low-background experimental setup.

preprint2016arXiv

A measurement method of a detector response function for monochromatic electrons based on the Compton scattering

In this paper we present a method of scintillation detector energy calibration using the gamma-rays. The technique is based on the Compton scattering of gamma-rays in a scintillation detector and subsequent photoelectric absorption of the scattered photon in the Ge-detector. The novelty of this method is that the source of gamma rays, the germanium and scintillation detectors are immediately arranged adjacent to each other. The method presents an effective solution for the detectors consisting of a low atomic number materials, when the ratio between Compton effect and photoelectric absorption is large and the mean path of gamma-rays is comparable to the size of the detector. The technique can be used for the precision measurements of the scintillator light yield dependence on the electron energy.

preprint2014arXiv

Search for axioelectric effect of solar axions using BGO scintillating bolometer

A search for axioelectric absorption of solar axions produced in the $ p + d \rightarrow {^3\rm{He}}+γ~(5.5~ \rm{MeV})$ reactions has been performed with a BGO detector placed in a low-background setup. A model-independent limit on an axion-nucleon and axion-electron coupling constant has been obtained: $| g_{Ae}\times g_{AN}^3|< 1.9\times 10^{-10}$ for 90% confidence level. The constrains of the axion-electron coupling have been obtained for hadronic axion with masses in (0.1 - 1) MeV range: $|g_{Ae}| \leq (0.96 - 8.2)\times 10^{-8}$.

preprint2013arXiv

Search for solar axions produced by Compton process and bremsstrahlung using axioelectric effect

The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant $|g_{Ae}| \leq 2.2\times 10^{-10}$ has been obtained, which leads to the bounds $m_{A}\leq$ 7.9 eV and $m_{A}\leq$ 1.4 keV for the mass of the axion in the DFSZ and KSVZ models, respectively (90% C.L.).