Researcher profile

I. S. Drachnev

I. S. Drachnev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
8topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2023arXiv

Investigation of radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide

Influence of the prolonged irradiation by fission products of 252Cf radionuclide on the operational parameters of silicon-lithium Si(Li) p-i-n detectors, Si surface barrier detectors and Si planar p+n detector was investigated. The obtained results revealed a linear shift of the fission fragment peaks positions towards the lower energies with increase of the irradiation dose for all investigated detectors. The rate of the peaks shift was found to depend strongly on the detector type and the strength of the electric field in the detectors active region, but not on the temperature of irradiation (room or liquid nitrogen temperature). Based on the obtained results, the possibility of integration of the investigated types of Si semiconductor detectors in a radionuclide neutron calibration source is considered.

preprint2021arXiv

Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

preprint2021arXiv

Precision measurement of $^{\mathbf{210}}$Bi $β$-spectrum

The precision measurement of the $β-$spectrum shape for $^{210}$Bi (historically RaE) have been performed with a spectrometer based on semiconductor Si(Li) detector. This first forbidden non-unique transition has the transition form-factor strongly deviated from unity and knowledge of its spectrum would play an important role in low-background physics in presence of $^{210}$Pb background. The measured transition form-factor could be approximated as $S(W) = 1 + (-0.4363 \pm 0.0037) W + (0.0523 \pm 0.0010) W^2$, that is in good agreement with previous studies and has significantly increased parameter precision.

preprint2020arXiv

New limits on the resonant absorption of solar axions obtained with a $^{169}$Tm-containing cryogenic detector

A search for resonant absorption of solar axions by $^{169}$Tm nuclei was carried out. A newly developed approach involving low-background cryogenic bolometer based on Tm$_3$Al$_5$O$_{12}$ crystal was used that allowed for significant improvement of sensitivity in comparison with previous $^{169}$Tm based experiments. The measurements performed with $8.18$ g crystal during $6.6$ days exposure yielded the following limits on axion couplings: $|g_{Aγ} (g_{AN}^0 + g_{AN}^3) \leq 1.44 \times 10^{-14}$ GeV$^{-1}$ and $|g_{Ae} (g_{AN}^0 + g_{AN}^3) \leq 2.81 \times 10^{-16}$.

preprint2019arXiv

A Test of Bolometric Properties of Tm-containing Crystals as a Perspective Detector for the Solar Axion Search

The $^{169}$Tm nuclide has first nuclear level at 8.41 keV with magnetic type transition to the ground state and, therefore, can be used as a target nucleus for the search of resonant absorption of solar axions. We plan to use a Tm-containing crystal of a garnet family Tm$_3$Al$_5$O$_{12}$ as a bolometric detector in order to search for the excitation of the first nuclear level of $^{169}$Tm via the resonant absorption of solar axions. With this perspective in mind, a sample of the Tm$_3$Al$_5$O$_{12}$ crystal was grown and tested for its bolometric and optical properties. Measurements of chemical and/or radioactive contaminations were performed as well. In this paper we present the test results and estimate the requirements for a future low-background experimental setup.