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Researcher profile

N. N. Novitskii

N. N. Novitskii contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

2 published item(s)

preprint2012arXiv

Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime

Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spintronic devices on the base of magnetic nanostructures

Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.

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