Source author record

L. V. Lutsev

L. V. Lutsev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

Catalog footprint

What is connected

5works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2012arXiv

Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime

Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.

preprint2012arXiv

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.

preprint2011arXiv

Spin waves in nanosized magnetic films

We have studied spin excitations in nanosized magnetic films in the Heisenberg model with magnetic dipole and exchange interactions by the spin operator diagram technique. Dispersion relations of spin waves in thin magnetic films (in two-dimensional magnetic monolayers and in two-layer magnetic films) and the spin-wave resonance spectrum in N-layer structures are found. For thick magnetic films generalized Landau-Lifshitz equations are derived from first principles. Landau-Lifshitz equations have the integral (pseudodifferential) form, but not differential one. Spin excitations are determined by simultaneous solution of the Landau-Lifshitz equations and the equation for the magnetostatic potential. For normal magnetized ferromagnetic films the spin wave damping has been calculated in the one-loop approximation for a diagram expansion of the Green functions at low temperature. In thick magnetic films the magnetic dipole interaction makes a major contribution to the relaxation of long-wavelength spin waves. Thin films have a region of low relaxation of long-wavelength spin waves. In thin magnetic films four-spin-wave processes take place and the exchange interaction makes a major contribution to the damping. It is found that the damping of spin waves propagating in magnetic monolayer is proportional to the quadratic dependence on the temperature and is very low for spin waves with small wavevectors. Spin-wave devices on the base of nanosized magnetic films are proposed -- tunable narrow-band spin-wave filters with high quality at the microwave frequency range and field-effect transistor (FET) structures contained nanosized magnetic films under the gate electrode. Spin-wave resonances in nanosized magnetic films can be used to construct FET structures operating in Gigahertz and Terahertz frequency bands.

preprint2011arXiv

Spintronic devices on the base of magnetic nanostructures

Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.

preprint2009arXiv

Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles

We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterostructure with 71 at.% Co the magnetoresistance reaches 1000 ($10^5$ %) at room temperature. On the contrary, for SiO${}_2$(Co)/Si heterostructures magnetoresistance values are very small (4%) and for SiO${}_2$(Co) films the magnetoresistance has an opposite value. High values of the magnetoresistance effect in SiO${}_2$(Co)/GaAs heterostructures have been explained by magnetic-field-controlled process of impact ionization in the vicinity of the spin-dependent potential barrier formed in the semiconductor near the interface. Kinetic energy of electrons, which pass through the barrier and trigger the avalanche process, is reduced by the applied magnetic field. This electron energy suppression postpones the onset of the impact ionization to higher electric fields and results in the giant magnetoresistance. The spin-dependent potential barrier is due to the exchange interaction between electrons in the accumulation electron layer in the semiconductor and $d$-electrons of Co.