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P. A. Usachev

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Published work

3 published item(s)

preprint2019arXiv

Edge-on galaxies in the Hubble Ultra Deep Field

We studied a sample of 58 edge-on spiral galaxies at redshifts $z \sim 1$ selected in the Hubble Ultra Deep Field. For all galaxies we analyzed the 2D brightness distributions in the $V_{606}$ and $i_{775}$ filters and measured the radial ($h_r$) and vertical ($h_z$) exponential scales of the brightness distribution. We obtained evidence that the relative thickness of the disks of distant galaxies, i.e., the ratio of the vertical scale height and radial scale length ($h_z/h_r$), on average, exceeds the relative thickness of the disks of nearby spiral galaxies. The vertical scale height $h_z$ of the stellar disks of galaxies shows no big changes at $z \leq 1$. The possibility of the evolution of the radial scale length $h_r$ for the brightness distribution with redshift is discussed.

preprint2012arXiv

Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime

Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.

preprint2012arXiv

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.