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A. I. Stognij

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

Giant widening of interface magnetic layer in almost compensated iron garnet

A two-sublattice ferrimagnet undergoes a transition from a collinear to canted magnetic phase at magnetic field oriented along an easy magnetization direction. In this work, we study the transition by means of the magneto-optical Faraday effect in a thin film of compensated iron garnet (Lu$_{3-{\rm{x}}}$Bi$_{\rm{x}}$)(Fe$_{5-{\rm{y}}-{\rm{z}}}$Ga$_{\rm{y}}$Al$_{\rm{z}}$)O$_{12}$ grown on Gd$_3$Ga$_5$O$_{12}$ substrate. In the immediate vicinity of the compensation temperature a precursor of the transition with a complex shape was observed. Using a special sample with variable thickness we demonstrate an interfacial origin of the precursor. Diffusion of gadolinium from the substrate into the film forms a thin intermixed layer with enhanced magnetization. It induces an extended inhomogeneous magnetic structure in the film. A two-step shape of the precursor appears due to an easy-plane anisotropy of the intermixed magnetic layer. We emphasize that an effective width of the inhomogeneous magnetization distribution in the film grows enormously while approaching the compensation temperature.

preprint2014arXiv

Magnonic band gaps in YIG based magnonic crystals: array of grooves versus array of metallic stripes

The magnonic band gaps of the two types of planar one-dimensional magnonic crystals comprised of the periodic array of the metallic stripes on yttrium iron garnet (YIG) film and YIG film with an array of grooves was analyzed experimentally and theoretically. In such periodic magnetic structures the propagating magnetostatic surface spin waves were excited and detected by microstripe transducers with vector network analyzer and by Brillouin light scattering spectroscopy. Properties of the magnonic band gaps were explained with the help of the finite element calculations. The important influence of the nonreciprocal properties of the spin wave dispersion induced by metallic stripes on the magnonic band gap width and its dependence on the external magnetic field has been shown. The usefulness of both types of the magnonic crystals for potential applications and possibility for miniaturization are discussed.

preprint2012arXiv

Amplification of the photocurrent in SiO2(Co)/GaAs heterostructure induced by magnetic field in the avalanche regime

Amplification of the photocurrent in heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in magnetic field in the avalanche regime. While the avalanche process is suppressed by the magnetic field and the current decreases, for photon energy E greater than the GaAs bandgap energy the photocurrent significantly increases. The amplification reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained by the spin-dependent recombination process at deep impurity centers in GaAs.

preprint2012arXiv

Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime

In the avalanche regime we observed the negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide, SiO2(Co)/GaAs. Light irradiation with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap, suppresses the avalanche feedback and causes a reduction of the current flowing in the SiO2(Co)/GaAs.

preprint2011arXiv

Spintronic devices on the base of magnetic nanostructures

Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.

preprint2009arXiv

Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles

We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant magnetoresistance effect is observed. The effect has positive values, is expressed, when electrons are injected from the granular film into the GaAs semiconductor, and has the temperature-peak type character. The temperature location of the effect depends on the Co concentration and can be shifted by the applied electrical field. For the SiO${}_2$(Co)/GaAs heterostructure with 71 at.% Co the magnetoresistance reaches 1000 ($10^5$ %) at room temperature. On the contrary, for SiO${}_2$(Co)/Si heterostructures magnetoresistance values are very small (4%) and for SiO${}_2$(Co) films the magnetoresistance has an opposite value. High values of the magnetoresistance effect in SiO${}_2$(Co)/GaAs heterostructures have been explained by magnetic-field-controlled process of impact ionization in the vicinity of the spin-dependent potential barrier formed in the semiconductor near the interface. Kinetic energy of electrons, which pass through the barrier and trigger the avalanche process, is reduced by the applied magnetic field. This electron energy suppression postpones the onset of the impact ionization to higher electric fields and results in the giant magnetoresistance. The spin-dependent potential barrier is due to the exchange interaction between electrons in the accumulation electron layer in the semiconductor and $d$-electrons of Co.