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Researcher profile

N. N. Kolesnikov

N. N. Kolesnikov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-scicond-mat.str-elnucl-exnucl-thphysics.optics

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Published work

9 published item(s)

preprint2022arXiv

Second-harmonic response as a tool to detect spin textures in magnetic nodal-line semimetal Fe$_3$GeTe$_2$

We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe$_3$GeTe$_2$. For zero magnetic field, the observed response depends as a square of the longitudinal current, as it should be expected for non-linear Hall effect. The magnetic field behavior is found to be sophisticated: while the first-harmonic response shows the known anomalous Hall hysteresis in FGT, the second-harmonic Hall voltage is characterized by the pronounced high-field hysteresis and flat ($B$-independent) region with curves touching at low fields. The high-field hysteresis strongly depends on the magnetic field sweep rate, so it reflects some slow relaxation process. For the lowest rates, it is also accomplished by multiple crossing points. Similar shape of the second-harmonic hysteresis is known for skyrmion spin textures in non-linear optics. Since skyrmions have been demonstrated for FGT by direct visualization techniques, we can connect the observed high-field relaxation with deformation of the skyrmion lattice. Thus, the second-harmonic Hall voltage response can be regarded as a tool to detect spin textures in transport experiments.

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preprint2020arXiv

Band gap reconstruction at the interface between black phosphorus and a gold electrode

We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications.

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preprint2020arXiv

Lateral Josephson effect on the surface of Co$_3$Sn$_2$S$_2$ magnetic Weyl semimetal

We experimentally study lateral electron transport between two 5~$μ$m spaced superconducting indium leads on a top of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. For the disordered magnetic state of Co$_3$Sn$_2$S$_2$ crystal, we only observe the Andreev reflection in the proximity of each of the leads, which is indicative of highly transparent In-Co$_3$Sn$_2$S$_2$ interfaces. If the sample is homogeneously magnetized, it demonstrates well-developed anomalous Hall effect state. In this regime we find the Josephson current that takes place even for 5~$μ$m long junctions and shows the unusual magnetic field and temperature dependencies. As a possible reason for the results obtained, we discuss the contribution to the proximity-induced spin-triplet Josephson current from the topologically protected Fermi-arc states on the surface of Co$_3$Sn$_2$S$_2$.

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preprint2020arXiv

Spin-dependent transport through a Weyl semimetal surface

We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and non-magnetic Weyl semimetal WTe$_2$, respectively. Due to the ferromagnetic side of the junction, we investigate spin-polarized transport through the Weyl semimetal surface. For both structures, we demonstrate similar current-voltage characteristics, with hysteresis at low currents and sharp peaks in differential resistance at high ones. Despite this behavior resembles the known current-induced magnetization dynamics in ferromagnetic structures, evolution of the resistance peaks with magnetic field is unusual. We connect the observed effects with current-induced spin dynamics in Weyl topological surface states.

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preprint2015arXiv

Optical properties of two-dimensional gallium chalcogenide films

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

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preprint2015arXiv

Photoluminescence and Raman investigation of stability of InSe and GaSe thin films

Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.

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preprint2014arXiv

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals.

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preprint2012arXiv

Binding energy and stability of heavy and superheavy nuclei

Three different ways for description of binding energy of superheavy nuclei are discussed. First, one can consider superheavy nuclei as a part of a whole system of nuclei for which a global mass formula is found. Another way is the detailed local description of energy of superheavy nuclei taking into account the effects of shells and subshells. The third way of description, applied for nuclei in the region limited by principal magic numbers, is attached to the beta-stability line.

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preprint1997arXiv

Electronic Raman-scattering study of low-energy excitations in single and double CuO_2-layer Tl-Ba-(Ca)-Cu-O superconductors

Low energy Raman continuum and the redistribution of the continuum to a peak (2Δ-peak) in the superconducting state have been studied in Tl-Ba-(Ca)-Cu-O superconductors with single (Tl-2201) and double (Tl-2212) CuO_2 layer. The 2Δ/k_BT_c ratios in A_1g and B_1g symmetries are larger for Tl-2212 than for Tl-2201. The B_1g/A_1g gap ratio is also larger in Tl-2212. The A_1g intensities of the continuum and the 2Δ-peak are significantly weaker than the B_1g intensities in Tl-2201, but are comparable in Tl-2212. This shows that the Coulomb screening is much stronger in Tl-2201. The change from Tl-2201 to Tl-2212 of the normalized A_1g 2Δ-peak intensity is identical within experimental error to that of normalized A_1g continuum intensity. This suggests that the excitations forming the 2Δ-peak and the continuum couple to light by the same mechanism.

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