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Paper detail

Optical properties of two-dimensional gallium chalcogenide films

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

preprint2015arXivOpen access
O. Del Pozo-ZamudioS. SchwarzM. SichI. A. AkimovM. BayerR. C. SchofieldE. A. ChekhovichB. J. RobinsonN. D. KayO. V. KolosovA. I. DmitrievG. V. LashkarevD. N. BorisenkoN. N. KolesnikovA. I. Tartakovskii
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O. Del Pozo-ZamudioS. SchwarzM. SichI. A. AkimovM. BayerR. C. SchofieldE. A. ChekhovichB. J. RobinsonN. D. KayO. V. KolosovA. I. DmitrievG. V. LashkarevD. N. BorisenkoN. N. KolesnikovA. I. Tartakovskii

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