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Minggang Zeng

Minggang Zeng contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2026arXiv

Explainable Molecular Property Prediction: Aligning Chemical Concepts with Predictions via Language Models

Providing explainable molecular property predictions is critical for many scientific domains, such as drug discovery and material science. Though transformer-based language models have shown great potential in accurate molecular property prediction, they neither provide chemically meaningful explanations nor faithfully reveal the molecular structure-property relationships. In this work, we develop a framework for explainable molecular property prediction based on language models, dubbed as Lamole, which can provide chemical concepts-aligned explanations. We take a string-based molecular representation -- Group SELFIES -- as input tokens to pretrain and fine-tune our Lamole, as it provides chemically meaningful semantics. By disentangling the information flows of Lamole, we propose combining self-attention weights and gradients for better quantification of each chemically meaningful substructure's impact on the model's output. To make the explanations more faithfully respect the structure-property relationship, we then carefully craft a marginal loss to explicitly optimize the explanations to be able to align with the chemists' annotations. We bridge the manifold hypothesis with the elaborated marginal loss to prove that the loss can align the explanations with the tangent space of the data manifold, leading to concept-aligned explanations. Experimental results over six mutagenicity datasets and one hepatotoxicity dataset demonstrate Lamole can achieve comparable classification accuracy and boost the explanation accuracy by up to 14.3%, being the state-of-the-art in explainable molecular property prediction.

preprint2015arXiv

Topological semimetals and topological insulators in rare earth monopnictides

We use first principles calculations to study the electronic properties of rock salt rare earth monopnictides La$X$ ($X=$N, P, As, Sb, Bi). A new type of topological band crossing termed `linked nodal rings' is found in LaN when the small spin-orbital coupling (SOC) on nitrogen orbitals is neglected. Turning on SOC gaps the nodal rings at all but two points, which remain gapless due to $C_4$-symmetry and leads to a 3D Dirac semimetal. Interestingly, unlike LaN, compounds with other elements in the pnictogen group are found to be topological insulators (TIs), as a result of band reordering due to the increased lattice constant as well as the enhanced SOC on the pnictogen atom. These TI compounds exhibit multi-valley surface Dirac cones at three $\bar{M}$-points on the $(111)$-surface.

preprint2014arXiv

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.

preprint2013arXiv

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we demonstrate here simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (53-85 meV), while the Fermi level (EF) remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by the surface state. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive topological surface states.

preprint2013arXiv

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a low stray field. We find an electric-field-induced giant modification of such perpendicular-anisotropy via a great magnetoelectric effect (the anisotropy energy coefficient beta~10-7 erg/V cm). Our spin electronic-structure and non-collinear transport calculations indicate high spin-polarized interfacial states and good magnetoresistance properties of CFA/MgO/CFA perpendicular magnetic tunnel junctions.

preprint2011arXiv

Adsorbate and defect effects on electronic and transport properties of gold nanotubes

First-principles calculations have been performed to study the effects of adsorbates (CO molecules and O atoms) and defects on electronic structures and transport properties of Au nanotubes (Au(5, 3) and Au(5, 5)). For CO adsorption, various adsorption sites of CO on the Au tubes were considered. The vibrational frequency of the CO molecule was found to be very different for two nearly degenerate stable adsorption configurations of Au(5, 3), implying the possibility of distinguishing these two configurations via measuring the vibrational frequency of CO in experiments. After CO adsorption, the conductance of Au(5, 3) decreases by 0.9G0 and the conductance of Au(5, 5) decreases by approximately 0.5G0. For O-adsorbed Au tubes, O atoms strongly interact with Au tubes, leading to around 2G0 of drop in conductance for both Au tubes. These results may have implications for Au-tube-based chemical sensing. When a monovacancy defect is present, we found that, for both tubes, the conductance decreases by around 1G0. Another type of defect arising from the adhesion of one Au atom is also considered. For this case, it is found that, for the Au(5, 3) tube, the defect decreases the conductance by nearly 1G0, whereas for Au(5, 5), the decrease in conductance is only 0.3G0.

preprint2010arXiv

Graphene-based spintronic components

A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transport property is attributed to the intrinsic transmission selection rule of the spin subbands near the Fermi level in ZGNRs. The simultaneous control of spin current by the bias voltage and the magnetic configurations of the electrodes provides an opportunity to implement a whole range of spintronics devices. We propose theoretical designs for a complete set of basic spintronic devices, including bipolar spin diode, transistor and logic gates, based on ZGNRs.