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Yuan Ping Feng

Yuan Ping Feng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elphysics.comp-ph

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Published work

36 published item(s)

preprint2022arXiv

Decisive role of electron-phonon coupling for phonon and electron instabilities in transition metal dichalcogenides

The origin of the charge density wave (CDW) in transition metal dichalcognides has been in hot debate and no conclusive agreement has been reached. Here, we propose an ab-initio framework for an accurate description of both Fermi surface nesting and electron-phonon coupling (EPC) and systematically investigate their roles in the formation of CDW. Using monolayer 1H-NbSe$_2$ and 1T-VTe$_2$ as representative examples, we show that it is the momentum-dependent EPC softens the phonon frequencies, which become imaginary (phonon instabilities) at CDW vectors (indicating CDW formation). Besides, the distribution of the CDW gap opening (electron instabilities) can be correctly predicted only if EPC is included in the mean-field model. These results emphasize the decisive role of EPC in the CDW formation. Our analytical process is general and can be applied to other CDW systems.

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preprint2022arXiv

Magnetic Transition in Monolayer VSe2 via Interface Hybridization

Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Via interfacial hybridization with Co atomic overlayer, a magnetic moment of about 0.4 uB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/MLMoSe2 interface, these findings at the Co/ML-VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition.

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preprint2021arXiv

Developing Dipole-scheme Heterojunction Photocatalysts

The high recombination rate of photogenerated carriers is the bottleneck of photocatalysis, severely limiting the photocatalytic efficiency. Here, we develop a dipole-scheme (D-scheme for short) photocatalytic model and materials realization. The D-scheme heterojunction not only can effectively separate electrons and holes by a large polarization field, but also boosts photocatalytic redox reactions with large driving photovoltages and without any carrier loss. By means of first-principles and GW calculations, we propose a D-scheme heterojunction prototype with two real polar materials, PtSeTe/LiGaS2. This D-scheme photocatalyst exhibits a high capability of the photogenerated carrier separation and near-infrared light absorption. Moreover, our calculations of the Gibbs free energy imply a high ability of the hydrogen and oxygen evolution reaction by a large driving force. The proposed D-scheme photocatalytic model is generalized and paves a valuable route of significantly improving the photocatalytic efficiency.

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preprint2021arXiv

Phase diagram and superlattice structures of monolayer phosphorus carbide (P$_x$C$_{1-x}$)

Phase stability and properties of two-dimensional phosphorus carbide, P$_x$C$_{1-x}$, are investigated using the first-principles method in combination with cluster expansion and Monte Carlo simulation. Monolayer P$_x$C$_{1-x}$ is found to be a phase separating system which indicates difficulty in fabricating monolayer P$_x$C$_{1-x}$ or crystalline P$_x$C$_{1-x}$ thin films. Nevertheless, a bottom-up design approach is used to determine the stable structures of P$_x$C$_{1-x}$ of various compositions which turn out to be superlattices consisting of alternating carbon and phosphorus nanoribbons along the armchair direction. Results of first-principles calculations indicate that once these structures are produced, they are mechanically and thermodynamically stable. All the ordered structures are predicted to be semiconductors, with band gap ranging from 0.2 to 1.2 eV. In addition, the monolayer P$_x$C$_{1-x}$ are predicted to have high carrier mobility, and high optical absorption in the ultraviolet region which shows a red-shift as the P:C ratio increases. These properties make 2D P$_x$C$_{1-x}$ promising materials for applications in electronics and optoelectronics.

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preprint2021arXiv

Room temperature ferromagnetism of monolayer chromium telluride with perpendicular magnetic anisotropy

The realization of long-range magnetic ordering in two-dimensional (2D) systems can potentially revolutionize next-generation information technology. Here, we report the successful fabrication of crystalline Cr3Te4 monolayers with room temperature ferromagnetism. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (~100C), compatible with Si CMOS technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (Tc) of ~344 K for the Cr3Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to ~240 K for the thicker film (~ 7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with room temperature ferromagnetism for new magnetic and spintronic devices.

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preprint2021arXiv

Two-dimensional topological superconductivity candidate in van der Waals layered material

Two-dimensional (2D) topological superconductors are highly desired because they not only offer opportunities for exploring novel exotic quantum physics, but also possesses potential applications in quantum computation. However, there are few reports on 2D superconductors, let alone topological superconductors. Here, we find a 2D monolayer W$_2$N$_3$, which can be exfoliated from its real van der Waals bulk material with much lower exfoliation energy than MoS$_2$, to be a topological metal with exotic topological states at different energy level. Due to the Van Hove singularities, the density of states near Fermi level are high, making the monolayer a compensate metal. Moreover, the monolayer W$_2$N$_3$ is unveiled to be a superconductor with the superconducting transition temperature Tc $\sim$ 22 K and a superconducting gap of about 5 meV based on the anisotropic Migdal-Eliashberg formalism, arising from the strong electron-phonon coupling around the $Γ$ point. Because of the strong electron and lattice coupling, the monolayer displays a non-Fermi liquid behavior in its normal states at temperatures lower than 80 K, where the specific heat exhibit T$^3$ behavior and the Wiedemann-Franz law dramatically violates. Our findings not only provide the platform to study the emergent phenomena in 2D topological superconductors, but also open a door to discover more 2D high-temperature topological superconductors in van der Waals materials.

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preprint2020arXiv

Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating

Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$ $10^{14}$ cm$^{-2}$) CGT in an electric double-layer transistor device is found to exhibit hysteresis in magnetoresistance (MR), a clear signature of ferromagnetism, at temperatures up to above 200 K, which is significantly higher than the known Curie temperature of 61 K for an undoped material. Additionally, angle-dependent MR measurements reveal that the magnetic easy axis of this new ground state lies within the layer plane in stark contrast to the case of undoped CGT, whose easy axis points in the out-of-plane direction. We propose that significant doping promotes double-exchange mechanism mediated by free carriers, prevailing over the superexchange mechanism in the insulating state. Our findings highlight that electrostatic gating of this class of materials allows not only charge flow switching but also magnetic phase switching, evidencing their potential for spintronics applications.

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preprint2015arXiv

Electronic and Transport Property of Phosphorene Nanoribbon

By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by the ribbon width and an external transverse electric feld. Our calculations indicate a giant Stark effect in PNRs, which can switch on transport channels of semiconducting PNRs under low bias, inducing an insulator-metal-transition. Next, we study the transport channels in PNRs via the calculations of the current density and local electron transmission pathway. In contrast to graphene and MoS_2 nanoribbons, the carrier transport channels under low bias are mainly located in the interior of both armchair and zigzag PNRs, and immune to a small amount of edge defects. Lastly, a device of the PNR-based dual-gate feld-effect-transistor, with high on/off-ratio of 10^3, is proposed based on the giant electric feld tuning effect.

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preprint2015arXiv

Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering

Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel nanoelectronic and optoelectronic applications. Phonons, as one of the most important collective excitations, are at the heart for the device performance, as their interactions with electrons and photons govern the carrier mobility and light-emitting efficiency of the material. Here, through a detailed first-principles study, it is demonstrated that monolayer phosphorene exhibits a giant phononic anisotropy, and remarkably, this anisotropy is squarely opposite to its electronic counterpart and can be tuned effectively by strain engineering. By sampling the whole Brillouin zone for the mono-layer phosphorene, several "hidden" directions are found, along which small-momentum phonons are "frozen" with strain and possess the smallest degree of anharmonicity. Unexpectedly, these "hidden" directions are intrinsically different from those usually studied armchair and zigzag directions. Light is also shed on the anisotropy of interlayer coupling of few-layer phosphorene by examining the rigid-layer vibrations. These highly anisotropic and strain-tunable characteristics of phosphorene offer new possibilities for its applications in thermal management, thermoelectronics, nanoelectronics and phononics.

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preprint2015arXiv

Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells

Using the first-principles GW-Bethe-Salpeter equation method, here we study the excited-state properties, including quasi-particle band structures and optical spectra, of phosphorene, a two-dimensional (2D) atomic layer of black phosphorus. The quasi-particle band gap of monolayer phosphorene is 2.15 eV and its optical gap is 1.6 eV, which is suitable for excitonic thin film solar cell applications. Next, this potential application is analysed by considering type-II heterostructures with single layered phosphorene and transition metal dichalcogenides (TMDs). These heterojunctions have a potential maximum power conversion efficiency of up to 12\%, which can be further enhanced to 20\% by strain engineering. Our results show that phosphorene is not only a promising new material for use in nanoscale electronics, but also in optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive and coherent picture that the interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies fully compensates the polarization potential divergence in LaAlO$_{3}$/SrTiO$_{3}$, explaining naturally the experimental observations under different conditions. While lattice distortions and a charge redistribution between LaO and AlO$_2$ sub-layers play a dominant role in insulating state, a spontaneous appearance of 1/4 oxygen vacancies per AlO$_{2}$ sub-layer at the LaAlO$_{3}$ surface accompanied by 0.5$e^{-}$ charge-transfer into the interface is responsible for interface conductivity and the discontinuous transition in LaAlO$_{3}$/SrTiO$_{3}$. Our model also explain properties of LaAlO$_{3}$/SrTiO$_{3}$ prepared with different growth conditions.

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preprint2014arXiv

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.

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preprint2014arXiv

Low-bias Negative Differential Resistance effect in armchair graphene nanoribbon junctions

Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ~ 0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate and whether the junction is made by etching or by hydrogenation.

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preprint2014arXiv

Microstructural Evolution of Charged Defects in the Fatigue Process of Polycrystalline BiFeO3 Thin Films

Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypothesis of variation in charged defects", which however are rarely evidenced by experimental observation. Here, using a combination of complex impedance spectra techniques, piezoresponse force microscopy and first-principles theory, we examine the microscopic evolution and redistribution of charged defects during the electrical cycling in BiFeO3 thin films. The dynamic formation and melting behaviors of oxygen vacancy (VO) order are identified during the fatigue process. It reveals that the isolated VO tend to self-order along grain boundaries to form a planar-aligned structure, which blocks the domain reversals. Upon further electrical cycling, migration of VO within vacancy clusters is accommodated with a lower energy barrier (~0.2 eV) and facilitates the formation of nearby-electrode layer incorporated with highly concentrated VO. The interplay between the macroscopic fatigue and microscopic evolution of charged defects clearly demonstrates the role of ordered VO cluster in the fatigue failure of BiFeO3 thin films.

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preprint2014arXiv

Optical conductivity renormalization of graphene on SrTiO$_{3}$ due to resonant excitonic effects mediated by Ti 3\textit{d} orbitals

We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orbitals of SrTiO$_3$ are strongly hybridized and the interactions of electron-hole states residing in those orbitals play dominant role in the graphene optical conductivity. These interactions are present much below the optical band gap of bulk SrTiO$_3$. These results open a possibility of manipulating interaction strengths in graphene via \textit {d}-orbitals which could be crucial for optical applications.

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preprint2013arXiv

Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study

Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the zigzag direction, the band gap opening can be related to the inter-valley scattering, and does not follow the simple scaling rule previously proposed in literature for the antidot lattice along the armchair direction. For h-BN, our calculations show that the antidot lattice results in reducing of band gaps. Coupled with doping of carbon atoms, the band gap of an h-BN antidot lattice can be reduced to below 2 eV, which might have implications in light-emitting devices or photoelectrochemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Beta-Ag2Te: A topological insulator with strong anisotropy

We present evidence of topological surface states in beta-Ag2Te through first-principles calculations and periodic quantum interference effect in single crystalline nanoribbon. Our first-principles calculations show that beta-Ag2Te is a topological insulator with a gapless Dirac cone with strong anisotropy. To experimentally probe the topological surface state, we synthesized high quality beta-Ag2Te nanoribbons and performed electron transport measurements. The coexistence of pronounced Aharonov-Bohm oscillations and weak Altshuler-Aronov-Spivak oscillations clearly demonstrates coherent electron transport around the perimeter of beta-Ag2Te nanoribbon and therefore the existence of metallic surface states, which is further supported by the temperature dependence of resistivity for beta-Ag2Te nanoribbons with different cross section areas. Highly anisotropic topological surface state of beta-Ag2Te suggests that the material is a promising material for fundamental study and future spintronic devices.

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preprint2013arXiv

Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, how to construct a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or interconnect without compromising the mechanical and structural integrity of the monolayer.

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preprint2013arXiv

Data Storage: Review of Heusler Compounds

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

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preprint2013arXiv

Electronic and Transport Properties of Molecular Junctions under a Finite Bias: A Dual Mean Field Approach

We show that when a molecular junction is under an external bias, its properties can not be uniquely determined by the total electron density in the same manner as the density functional theory (DFT) for ground state (GS) properties. In order to correctly incorporate bias-induced nonequilibrium effects, we present a dual mean field (DMF) approach. The key idea is that the total electron density together with the density of current-carrying electrons are sufficient to determine the properties of the system. Two mean fields, one for current-carrying electrons and the other one for equilibrium electrons can then be derived.By generalizing the Thomas-Fermi-Dirac (TFD) model to non-equilibrium cases, we analytically derived the DMF exchange energy density functional. We implemented the DMF approach into the computational package SIESTA to study non-equilibrium electron transport through molecular junctions. Calculations for a graphene nanoribbon (GNR) junction show that compared with the commonly used \textit{ab initio} transport theory, the DMF approach could significantly reduce the electric current at low biases due to the non-equilibrium corrections to the mean field potential in the scattering region.

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preprint2013arXiv

Energy-gap Opening and Quenching in Graphene under Periodic External Potentials

In this paper, we investigated the effects of periodic external potentials on properties of charge carriers in graphene using both the first-principles method based on density functional theory (DFT) and a theoretical approach based on a generalized effective spinor Hamiltonian. DFT calculations were done in a modified Kohn-Sham procedure that includes effects of the periodic external potential. Unexpected energy band gap opening and quenching were predicted for the graphene superlattice with two symmetrical sublattices and those with two unsymmetrical sublattices, respectively. Theoretical analysis based on the spinor Hamiltonian showed that the correlations between pseudospins of Dirac fermions in graphene and the applied external potential, and the potential-induced intervalley scattering, play important roles in energy-gap opening and quenching.

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preprint2013arXiv

Mn-doped Thiolated Au$_{25}$ Nanoclusters: Atomic Configuration, Magnetic Properties, and A Possible High-performance Spin Filter

We report an \emph{ab inito} investigation on the ground-state atomic configuration, electronic structures, magnetic and spin-dependent transport properties of Mn-doped Au$_{25}$ nanoclusters protected by thiolate. It is found that the most stable dopant sites are near surfaces, rather than the center positions of the nanoparticles. Transport calculations show that high-performance spin filters can be achieved by sandwiching these doped clusters between two nonmagnetic Au electrodes. The nearly perfect spin filtering originates from localized magnetic moments of these clusters that are well protected by ligands from the presence of electrodes.

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preprint2013arXiv

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

A two-step doping process, magnetic followed by charge or vice versa, is required to produce insulating massive surface states in topological insulators for many physics and device applications. Using first-principles calculations, we demonstrate here simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (53-85 meV), while the Fermi level (EF) remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by the surface state. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive topological surface states.

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preprint2013arXiv

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a low stray field. We find an electric-field-induced giant modification of such perpendicular-anisotropy via a great magnetoelectric effect (the anisotropy energy coefficient beta~10-7 erg/V cm). Our spin electronic-structure and non-collinear transport calculations indicate high spin-polarized interfacial states and good magnetoresistance properties of CFA/MgO/CFA perpendicular magnetic tunnel junctions.

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preprint2012arXiv

Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-metallic full-Heusler alloy Co2CrAl and ferroelectric perovskite NaNbO3. Spin-dependent coherent tunneling was calculated within the framework of non-equilibrium Green's function technique. Both spin polarization and tunnel magnetoresistance (TMR) are affected by the interfacial strain but their responses to compressive and tensile strains are different. Spin polarization across the interface is fully preserved under a compressive strain due to stronger coupling between interfacial atoms, whereas a tensile strain significantly enhances interface states and lead to substantial drops in spin polarization and TMR.

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preprint2012arXiv

Origin of the different conductive behavior in pentavalent-ion-doped anatase and rutile TiO$_2$

The electronic properties of pentavalent-ion (Nb$^{5+}$, Ta$^{5+}$, and I$^{5+}$) doped anatase and rutile TiO$_2$ are studied using spin-polarized GGA+\emph{U} calculations. Our calculated results indicate that these two phases of TiO$_2$ exhibit different conductive behavior upon doping. For doped anatase TiO$_2$, some up-spin-polarized Ti 3\emph{d} states lie near the conduction band bottom and cross the Fermi level, showing an \emph{n}-type half-metallic character. For doped rutile TiO$_2$, the Fermi level is pinned between two up-spin-polarized Ti 3\emph{d} gap states, showing an insulating character. These results can account well for the experimental different electronic transport properties in Nb (Ta)-doped anatase and rutile TiO$_2$.

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preprint2011arXiv

Adsorbate and defect effects on electronic and transport properties of gold nanotubes

First-principles calculations have been performed to study the effects of adsorbates (CO molecules and O atoms) and defects on electronic structures and transport properties of Au nanotubes (Au(5, 3) and Au(5, 5)). For CO adsorption, various adsorption sites of CO on the Au tubes were considered. The vibrational frequency of the CO molecule was found to be very different for two nearly degenerate stable adsorption configurations of Au(5, 3), implying the possibility of distinguishing these two configurations via measuring the vibrational frequency of CO in experiments. After CO adsorption, the conductance of Au(5, 3) decreases by 0.9G0 and the conductance of Au(5, 5) decreases by approximately 0.5G0. For O-adsorbed Au tubes, O atoms strongly interact with Au tubes, leading to around 2G0 of drop in conductance for both Au tubes. These results may have implications for Au-tube-based chemical sensing. When a monovacancy defect is present, we found that, for both tubes, the conductance decreases by around 1G0. Another type of defect arising from the adhesion of one Au atom is also considered. For this case, it is found that, for the Au(5, 3) tube, the defect decreases the conductance by nearly 1G0, whereas for Au(5, 5), the decrease in conductance is only 0.3G0.

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preprint2011arXiv

Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries

One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles method, we derived and proved a general edge (boundary) condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting GNRs have some interesting properties including the one that they can be embedded and integrated in a large piece of graphene without the need of completely cutting them out. We also demonstrated a new type of high-performance all-ZGNR FET.

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preprint2011arXiv

Design of a low band gap oxide ferroelectric: Bi$_6$Ti$_4$O$_{17}$

A strategy for obtaining low band gap oxide ferroelectrics based on charge imbalance is described and illustrated by first principles studies of the hypothetical compound Bi$_6$Ti$_4$O$_{17}$, which is an alternate stacking of the ferroelectric Bi$_4$Ti$_3$O$_{12}$. We find that this compound is ferroelectric, similar to Bi$_4$Ti$_3$O$_{12}$ although with a reduced polarization. Importantly, calculations of the electronic structure with the recently developed functional of Tran and Blaha yield a much reduced band gap of 1.83 eV for this material compared to Bi$_4$Ti$_3$O$_{12}$. Therefore, Bi$_6$Ti$_4$O$_{17}$ is predicted to be a low band gap ferroelectric material.

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preprint2011arXiv

Dielectric properties and lattice dynamics of alpha-PbO2-type TiO2: The role of soft phonon modes in pressure-induced phase transition to baddeleyite-type TiO2

Dielectric tensor and lattice dynamics of alpha-PbO2-type TiO2 have been investigated using the density functional perturbation theory, with a focus on responses of the vibrational frequencies to pressure. The calculated Raman spectra under different pressures are in good agreement with available experimental results and the symmetry assignments of the Raman peaks of alpha-PbO2-type TiO2 are given for the first time. In addition, we identified two anomalously IR-active soft phonon modes, B1u and B3u, respectively, around 200 cm-1 which have not been observed in high pressure experiments. Comparison of the phonon dispersions at 0 and 10 GPa reveals that softening of phonon modes also occurs for the zone-boundary modes. The B1u and B3u modes play an important role in transformation from the alpha-PbO2-type phase to baddeleyite phase. The significant relaxations of the oxygen atoms from the Ti4 plane in the Ti2O2Ti2 complex of the baddeleyite phase are directly correlated to the oxygen displacements along the directions given by the eigenvectors of the soft B1u and B3u modes in the alpha-PbO2-type phase.

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preprint2011arXiv

Differential Conductance Anomaly in Superconducting Quantum Point Contacts

We present in this letter a theoretical analysis of the current-voltage (I-V) characteristics of a hybrid normal-superconducting device consisting of a quantum dot and two electrodes that can be either normal or superconducting. We show that voltage drops at two different contacts that have been regarded unimportant in literature play essential roles in the Andreev tunneling process when at least one of electrodes is superconducting. A differential-conductance-anomaly caused by the aforementioned voltage drops is predicted. We also propose a new spectroscopy method to measure the energy levels of a quantum dot as well as voltage drops at contacts between the quantum dot and the two leads. Our findings have potential applications for the next generation of electronic devices at nanoscale.

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preprint2011arXiv

Electron tunneling through hybrid superconducting-normal quantum point contacts under microwave radiation

We present a theoretical analysis for photon-assisted electron tunneling through a hybrid superconducting-normal quantum point contact (QPC) consisting of a superconducting lead (S), a normal two-level quantum dot (N), and a normal lead (N). Using single particle non-equilibrium Green's function formalism, we incorporate Floquet basis in the Nambu space and solve the Green's function with finite matrix truncation to obtain the transport properties numerically. Based on the proposed method, we studied the effects of photon-induced single-level oscillations and quantum transition between two levels on the current-voltage (I-V) characteristics of a superconducting QPC. For the single level case, the main dc resonance in the I-V curve remains unchanged regardless of the frequency and amplitude of the radiation, and a series of secondary resonances due to multi-photon processes are present. When the transition between two levels ($ε_{1}$, $ε_{2}$) is taken into account and level oscillations are neglected, photons only have significant effects at Rabi resonance when $\hbarω=(ε_{2}-ε_{1})$. At Rabi resonance, the main dc resonance splits into two, and the separation between them is determined by the coupling strength of the two levels.

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preprint2011arXiv

Strain effects on work functions of pristine and potassium-decorated carbon nanotubes

Strain dependence of electronic structures and work functions of both pristine and potassium doped (5,5) (armchair) and (9,0) (zigzag) carbon nanotubes (CNTs) has been thoroughly studied using first-principles calculations based on density functional theory (DFT). We found that for pristine cases, the uniaxial strain has strong effects on work functions of CNTs, and the responses of work functions of CNT (5,5) and (9,0) to the strain are distinctly different. When the strain changes from -10% to +10%, the work function of the CNT (5,5) increases monotonically from 3.95 eV to 4.57 eV, and the work function of the (9,0) varies between 4.27 eV and 5.24 eV in a complicated manner. When coated with potassium, for both CNTs, work functions can be lowered down by more than 2.0 eV, and the strain dependence of work functions changes drastically. Our studies suggested that the combination of chemical coating and tuning of strain may be a powerful tool for controlling work functions of CNTs, which in turn will be useful in future design of CNT-based electronic and field-emitting devices.

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preprint2011arXiv

Switching and Rectification of a Single Light-sensitive Diarylethene Molecule Sandwiched between Graphene Nanoribbons

The 'open' and 'closed' isomers of the diarylethene molecule that can be converted between each other upon photo-excitation are found to have drastically different current-voltage characteristics when sandwiched between two graphene nanoribbons (GNRs). More importantly, when one GNR is metallic and another one is semiconducting, strong rectification behavior of the 'closed' diarylethene isomer with the rectification ratio >10^3 is observed. The surprisingly high rectification ratio originates from the band gap of GNR and the bias-dependent variation of the lowest unoccupied molecular orbital (LUMO) of the diarylethene molecule, the combination of which completely shuts off the current at positive biases. Results presented in this paper may form the basis for a new class of molecular electronic devices.

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preprint2011arXiv

Theory of high energy optical conductivity and the role of oxygens in manganites

Recent experimental study reveals the optical conductivity of La$_{1-x}$Ca$_x$MnO$_3$ over a wide range of energy and the occurrence of spectral weight transfer as the system transforms from paramagnetic insulating to ferromagnetic metallic phase [Rusydi {\it et al.}, Phys. Rev. B {\bf 78}, 125110 (2008)]. We propose a model and calculation within the Dynamical Mean Field Theory to explain this phenomenon. We find the role of oxygens in mediating the hopping of electrons between manganeses as the key that determines the structures of the optical conductivity. In addition, by parametrizing the hopping integrals through magnetization, our result suggests a possible scenario that explains the occurrence of spectral weight transfer, in which the ferromagnatic ordering increases the rate of electron transfer from O$_{2p}$ orbitals to upper Mn$_{e_g}$ orbitals while simultaneously decreasing the rate of electron transfer from O$_{2p}$ orbitals to lower Mn$_{e_g}$orbitals, as temperature is varied across the ferromagnetic transition. With this scenario, our optical conductivity calculation shows very good quantitative agreement with the experimental data.

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preprint2011arXiv

Two-dimensional Graphene Superlattice Made with Partial Hydrogenation

Electronic properties of two-dimensional graphene superlattice made with partial hydrogenation were thoroughly studied via Density Functional Tight Binding approach (DFTB) which incorporates the tight-binding method into the density functional formalism. The two-dimensional (2-d) pattern of hydrogen atoms on graphene was found to have great effects on electronic structures of graphene superlattice. In particular, the edges of the 2-d pattern, armchair or zigzag, are essential for the energy band gap opening, and the energy band gap sensitively depends on the shape, size, and the 2-d periodicity of the pattern. Based on these findings, we suggested that the 2-d graphene superlattice may be used in fabricating quantum dots and 2-d heterojunctions on graphene without the need for cutting or etching.

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