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Arun Bansil

Arun Bansil contributes to research discovery and scholarly infrastructure.

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Published work

33 published item(s)

preprint2025arXiv

Magnetism-Enhanced Strong Electron-Phonon Coupling in Infinite-Layer Nickelate

Intriguing analogies between the nickelates and the cuprates provide a promising avenue for unraveling the microscopic mechanisms underlying high-$T_c$ superconductivity. While electron correlation effects in the nickelates have been extensively studied, the role of electron-phonon coupling (EPC) remains highly controversial. Here, by taking pristine LaNiO$_2$ as an exemplar nickelate, we present an in-depth study of EPC for both the non-magnetic (NM) and the $C$-type antiferromagnetic ($C$-AFM) phase using advanced density functional theory methods without invoking $U$ or other free parameters. The weak EPC strength $λ$ in the NM phase is found to be greatly enhanced ($\sim$4$\times$) due to the presence of magnetism in the $C$-AFM phase. This enhancement arises from strong interactions between the flat bands associated with the Ni-3$d_{z^2}$ orbitals and the low-frequency phonon modes driven by the vibrations of Ni and La atoms. The resulting phonon softening is shown to yield a distinctive kink in the electronic structure around 15 meV, which would provide an experimentally testable signature of our predictions. Our study highlights the critical role of local magnetic moments and interply EPC in the nickelate.

preprint2025arXiv

Topological Nature of Orbital Chern Insulators

Ground state topologies in quantum materials have unveiled many unique topological phases with novel Hall responses. Recently, the orbital Hall effect in insulators has suggested the existence of orbital Chern insulators (OCIs) in which the orbital angular momentum drives the Hall response. Studies on OCIs, however, have so far been restricted to valley-locked or spinful systems, but candidate materials for systematic studies of OCIs are lacking. Here we discuss a framework for investigating OCIs using the feature-spectrum topology approach. To characterize the ground-state topology in the orbital degree of freedom, we introduce the orbital Chern number and orbital-feature Berry curvature and demonstrate the bulk-boundary correspondence and orbital Hall response. We also uncover a parameter-driven topological phase transition, which would offer tunability of the OCIs. In this way, we identify monolayer blue-phosphorene (traditionally considered topologically trivial) as the primal 'hydrogen atom' of OCIs as a spinless, valley-free OCI material. Our study gives insight into the nature of orbital-driven topological phases and reveals a new facet of blue-phosphorene, and provides a new pathway for advancements in orbitronics and the discovery of novel topological materials.

preprint2024arXiv

Accurate Electron-phonon Interactions from Advanced Density Functional Theory

Electron-phonon coupling (EPC) is key for understanding many properties of materials such as superconductivity and electric resistivity. Although first principles density-functional-theory (DFT) based EPC calculations are used widely, their efficacy is limited by the accuracy and efficiency of the underlying exchange-correlation functionals. These limitations become exacerbated in complex $d$- and $f$-electron materials, where beyond-DFT approaches and empirical corrections, such as the Hubbard $U$, are commonly invoked. Here, using the examples of CoO and NiO, we show how the efficient r2scan density functional correctly captures strong EPC effects in transition-metal oxides without requiring the introduction of empirical parameters. We also demonstrate the ability of r2scan to accurately model phonon-mediated superconducting properties of the main group compounds (e.g., MgB$_2$), with improved electronic bands and phonon dispersions over those of traditional density functionals. Our study provides a pathway for extending the scope of accurate first principles modeling of electron-phonon interactions to encompass complex $d$-electron materials.

preprint2023arXiv

Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals

Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic AHE include diverging Berry curvature in Weyl semimetals, anticrossing nodal rings or points of non-trivial bands, and noncollinear spin structures. Here we show that a half-topological semimetal (HTS) state near a topological critical point can provide a new mechanism for driving an exceptionally large AHE. We reveal this through a systematic experimental and theoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observed an unusual AHE with a surprisingly large anomalous Hall angle ΘH (tan ΘH ~ 2, the largest among the antiferromagnets) in its field-driven ferromagnetic (FM) phase, but also found a distinct Hall resistivity peak in the canted AFM phase within a low field range, where its isothermal magnetization is nearly linearly dependent on the field. Moreover, we observed a nearly isotropic, giant negative magnetoresistance with a magnitude of ~98%. Our in-depth theoretical modelling demonstrates that these exotic transport properties originate from the HTS state. A minimal Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands results not only in an extremely large AHE, but it also enhances the spin polarization of the spin-down bands substantially and thus leads to a giant negative magnetoresistance. Our study advances the understanding of the interplay between band topology and magnetism and offers new clues for materials design for spintronics and other applications.

preprint2023arXiv

Transverse circular photogalvanic effect associated with Lorentz-violating Weyl fermions

Nonlinear optical responses of quantum materials have recently undergone dramatic developments to unveil nontrivial geometry and topology. A remarkable example is the quantized longitudinal circular photogalvanic effect (CPGE) associated with the Chern number of Weyl fermions, while the physics of transverse CPGE in Weyl semimetals remains exclusive. Here, we show that the transverse CPGE of Lorentz invariant Weyl fermions is forced to be zero. We find that the transverse photocurrents of Weyl fermions are associated not only with the Chern numbers but also with the degree of Lorentz-symmetry breaking in condensed matter systems. Based on the generic two-band model analysis, we provide a new powerful equation to calculate the transverse CPGE based on the tilting and warping terms of Weyl fermions. Our results are more capable in designing large transverse CPGE of Weyl semimetals in experiments and are applied to more than tens of Weyl materials to estimate their photocurrents. Our method paves the way to study the CPGE of massless or massive quasiparticles to design next-generation quantum optoelectronics.

preprint2022arXiv

Collective plasmonic modes in the chiral multifold fermionic material CoSi

Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The 0.1 eV plasmon is found to be highly dispersive, and originates from intraband collective oscillations associated with a double spin-1 excitation, while the 1.1 eV plasmon is dispersionless and it involves interband correlations. Both plasmon modes lie outside the particle-hole continuum and possess long lifetime. Our study indicates that the CoSi class of materials will provide an interesting materials platform for exploring fundamental and technological aspects of topological plasmonics.

preprint2022arXiv

Competing Incommensurate Spin Fluctuations and Magnetic Excitations in Infinite-Layer Nickelate Superconductors

The recently discovered infinite-layer nickelates show great promise in helping to disentangle the various cooperative mechanisms responsible for high-temperature superconductivity. However, lack of antiferromagnetic order in the pristine nickelates presents a challenge for connecting the physics of the cuprates and nickelates. Here, by using a quantum many-body Green's function-based approach to treat the electronic and magnetic structures, we unveil the presence of many two- and three-dimensional magnetic stripe instabilities that are shown to persist across the phase diagram of LaNiO$_2$. Our analysis indicates that the magnetic properties of the infinite-layer nickelates are closer to those of the doped cuprates which host inhomogeneous ground states rather than the undoped cuprates. The computed magnon spectrum in LaNiO$_2$ is found to contain an admixture of contributions from localized and itinerant carriers. The theoretically obtained magnon dispersion is in accord with the results of the corresponding RIXS experiments. Our study gives insight into the origin of inhomogeneity in the infinite-layer nickelates and their relationship with the cuprates.

preprint2022arXiv

Critical role of magnetic moments in heavy-fermion materials: revisiting mysteries of SmB$_{6}$

Heavy-fermion family exhibits fascinating and often puzzling properties due to the presence of open-shell $f$ ions and the complexity of the associated charge, orbital, and spin degrees of freedom. SmB$_6 $ is a prototypical heavy-fermion compound that is electrically insulating but yet it displays quantum oscillations, which are a telltale signature of the metallic state. Adding to the enigma is the possibility that SmB$_6$ is a topological Kondo insulator. Here, by treating the spin degree of freedom on an equal footing with other degrees of freedom using the parameter-free strongly-constrained and appropriately-normed (SCAN) density functional, we explore the ground-state electronic structure of SmB$_{6}$. A number of competing magnetic phases lying very closely in energy are found, indicating the key role of spin fluctuations in the material. The computed band structure, crystal-field splittings in the $f$-electron complex, the heavy effective electron mass at the Fermi energy, and the large specific heat are all in good agreement with the corresponding experimental results. In particular, our predicted FS explains the experimentally observed bulk quantum oscillations as well as the low electrical conductivity of SmB$_{6}$. The topological Kondo state of SmB$_6$ is shown to be robust regardless of its magnetic configuration. The excellent performance of SCAN in heavy-fermion systems is explained in terms of its ability to treat self-interaction errors and symmetry breaking within the framework of the density functional theory. Our study provides a new approach for modeling heavy-fermion materials.

preprint2022arXiv

Critical role of magnetic moments on lattice dynamics in YBa${}_{2}$Cu${}_{3}$O${}_{6}$

The role of lattice dynamics in unconventional high-temperature superconductivity is still vigorously debated. Theoretical insights into this problem have long been prevented by the absence of an accurate first-principles description of the combined electronic, magnetic, and lattice degrees of freedom. Utilizing the recently constructed r$^2$SCAN density functional that stabilizes the antiferromagnetic (AFM) state of the pristine oxide YBa$_2$Cu$_3$O$_6$, we faithfully reproduce the experimental dispersion of key phonon modes. We further find significant magnetoelastic coupling in numerous high energy Cu-O bond stretching optical branches, where the AFM results improve over the soft non-magnetic phonon bands.

preprint2022arXiv

Effect of disorder and doping on electronic structure and diffusion properties of Li$_{3}$V$_{2}$O$_{5}$

V$_{2}$O$_{5}$ in its $ω$ phase (Li$_{3}$V$_{2}$O$_{5}$) with excess lithium is a potential alternative to the graphite anode for lithium-ion batteries at low temperature and fast charging conditions due to its safer voltage (0.6 V vs Li$^{+}$/Li(s)) and high lithium transport rate. In-operando cationic disorder, as observed in most ordered materials, can produce significant changes in charge compensation mechanisms, anionic activity, lithium diffusion and operational voltages. In this work, we report the variation in structural distortion, electronic structure and migration barrier accompanied by disorder using first-principles calculations. Due to segregation of lithium atoms in the disordered state, we observe greater distortion, emergence of metallic behaviour and potential anionic activity from non-bonding oxygen states near the Fermi level. Redox capacity can be tuned by doping with 3d metals which can adjust the participating cationic states, and by fluorine substitution which can stabilize or suppress anionic states. Moreover, suppression of anionic activity is found to decrease structural distortion, crucial for mitigating voltage fade and hysteresis. Diffusion barrier calculations in the presence of disorder indicate the activation of the remaining 3D-paths for lithium hopping which are unavailable in the ordered configuration, explaining its fast-charging ability observed in experiments.

preprint2022arXiv

High Spin-Chern-Number Insulator in $α$-Antimonene with a Hidden Topological Phase

In investigating the topological electronic structures of monolayer $α$-phase group V elements, we uncover a new topological phase, which is invisible in the symmetry-based topological quantum chemistry (TQC) as well as symmetry indicators (SIs). Since $α$ phase As and Sb share the same band representations at high-symmetry points, they are both trivial insulators in terms of TQC and SIs. We demonstrate, however, that there is a topological phase transition between As and Sb that involves a band-gap closing at two $k$-points on the high-symmetry $\rm{X}$-$\rmΓ$-$\rm{X}$ line. In the absence of spin-orbit coupling (SOC), As is a trivial insulator, while Sb is a Dirac semimetal with four Dirac points (DPs) located away from the high-symmetry lines. Inclusion of $S_z$-conserved SOC gaps out the Dirac points and induces a nontrivial Berry curvature and drives Sb into a high spin Chern number topological phase. The band structure of $α$-Bi differs from that of Sb by a band inversion at $Γ$, transforming Bi into a Z$_2$ topological insulator. Our study shows that quantized spin Hall conductivity can serve as a topological invariant beyond Z$_2$ for characterizing topological phases.

preprint2022arXiv

Magnetically tunable Dirac and Weyl fermions in the Zintl materials family

Recent classification efforts encompassing crystalline symmetries have revealed rich possibilities for solid-state systems to support a tapestry of exotic topological states. However, finding materials that realize such states remains a daunting challenge. Here we show how the interplay of topology, symmetry, and magnetism combined with doping and external electric and magnetic field controls can be used to drive the previously unreported SrIn$_2$As$_2$ materials family into a variety of topological phases. Our first-principles calculations and symmetry analysis reveal that SrIn$_2$As$_2$ is a dual topological insulator with $Z_2=(1;000)$ and mirror Chern number $C_M= -1$. Its isostructural and isovalent antiferromagnetic cousin EuIn$_2$As$_2$ is found to be an axion insulator with $Z_4= 2$. The broken time-reversal symmetry via Eu doping in Sr$_{1-x}$Eu$_x$In$_2$As$_2$ results in a higher-order or topological crystalline insulator state depending on the orientation of the magnetic easy axis. We also find that antiferromagnetic EuIn$_2$P$_2$ is a trivial insulator with $Z_4= 0$, and that it undergoes a magnetic field-driven transition to an ideal Weyl fermion or nodal fermion state with $Z_4= 1$ with applied magnetic field. Our study identifies Sr$_{1-x}$Eu$_x$In$_2$(As, P)$_2$ as a new tunable materials platform for investigating the physics and applications of Weyl and nodal fermions in the scaffolding of crystalline and axion insulator states.

preprint2022arXiv

Multi-Band Superconductivity in Strongly Hybridized 1T'-WTe$_2$/NbSe$_2$ Heterostructures

The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer 1T'-WTe$_2$, grown on NbSe$_2$ by van-der-Waals epitaxy. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500~mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations which captures the multi-band superconductivity inherent to the NbSe$_2$ substrate and that induced by proximity in WTe$_2$, self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively, and confirms that strong inter-layer hopping gives rise to a semi-metallic density of states in the 2D WTe$_2$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter $Δ\simeq 0.6$~meV induced in the WTe$_2$ monolayer bulk, stable beyond a 2~T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.

preprint2022arXiv

Sensitivity of the electronic and magnetic structures of cuprate superconductors to density functional approximations

We discuss the crystal, electronic, and magnetic structures of $\mathrm{La_{2-x}Sr_{x}CuO_{4}}$ (LSCO) for $x=0.0$ and $x=0.25$ employing 13 density functional approximations, representing the local, semi-local, and hybrid exchange-correlation approximations within the Perdew-Schmidt hierarchy. The meta-generalized gradient approximation (meta-GGA) class of functionals is found to perform well in capturing the key properties of LSCO, a prototypical high-temperature cuprate superconductor. In contrast, the local-spin-density approximation, GGA, and the hybrid density functional fail to capture the metal-insulator transition under doping.

preprint2022arXiv

Switchable large-gap quantum spin Hall state in two-dimensional MSi$_2$Z$_4$ materials class

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi$_2$Z$_4$ (M = Mo or W and Z = P or As) materials family with $1T^\prime$ structure. A structural distortion in the $2H$ phase drives a band inversion between the metal (Mo/W) $d$ and $p$ states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as $\sim 204$ meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi$_2$Z$_4$ materials family with $1T^\prime$ structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity.

preprint2022arXiv

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

preprint2022arXiv

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green's function methods. We show that there exists a critical thickness d_c dividing different scaling trends. Above d_c, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases in as conventional metals. Below d_c, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications.

preprint2021arXiv

Acoustic plasmons and conducting carriers in hole-doped cuprate superconductors

The superconductivity of cuprates, which has been a mystery ever since its discovery decades ago, is created through doping electrons or holes into a Mott insulator. There, however, exists an inherent electron-hole asymmetry in cuprates. The layered crystal structures of cuprates enable collective charge excitations fundamentally different from those of three-dimensional metals, i.e., acoustic plasmons. Acoustic plasmons have been recently observed in electron-doped cuprates by resonant inelastic X-ray scattering (RIXS); in contrast, there is no evidence for acoustic plasmons in hole-doped cuprates, despite extensive measurements. This contrast led us to investigate whether the doped holes in cuprates La$_{2-x}$Sr$_x$CuO$_4$ are conducting carriers or are too incoherent to induce collective charge excitation. Here we present momentum-resolved RIXS measurements and calculations of collective charge response via the loss function to reconcile the aforementioned issues. Our results provide unprecedented spectroscopic evidence for the acoustic plasmons and long sought conducting p holes in hole-doped cuprates.

preprint2021arXiv

Antisite defect qubits in monolayer transition metal dichalcogenides

Being atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.

preprint2020arXiv

Correlation in noncollinear antiferromagnetic $α$-Mn

We have investigated the interplay between magnetic and structural degrees of freedom in elemental Mn. The equilibrium volume is shown to depend critically on the magnetic interactions between the Mn atoms. While the standard generalized-gradient-approximation underestimates the equilibrium volume, a more accurate treatment of the effects of electronic localization and magnetism is found to solve this longstanding problem. We capture well the complexity of the large 58 atoms per unit cell $α$-Mn system for the first time, including its charge and spin patterns and the canting of spins with respect to the average magnetization direction.

preprint2020arXiv

Discovery of topological Weyl fermion lines and drumhead surface states in a room temperature magnet

Topological matter is known to exhibit unconventional surface states and anomalous transport owing to unusual bulk electronic topology. In this study, we use photoemission spectroscopy and quantum transport to elucidate the topology of the room temperature magnet Co$_2$MnGa. We observe sharp bulk Weyl fermion line dispersions indicative of nontrivial topological invariants present in the magnetic phase. On the surface of the magnet, we observe electronic wave functions that take the form of drumheads, enabling us to directly visualize the crucial components of the bulk-boundary topological correspondence. By considering the Berry curvature field associated with the observed topological Weyl fermion lines, we quantitatively account for the giant anomalous Hall response observed in our samples. Our experimental results suggest a rich interplay of strongly correlated electrons and topology in this quantum magnet.

preprint2020arXiv

Exceptionally large anomalous Hall effect due to anticrossing of spin-split bands in the antiferromagnetic half-Heusler compound TbPtBi

We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state of TbPtBi with the anomalous Hall angle (AHA) reaching ~0.68-0.76, which is a few times larger than the previously reported record in GdPtBi. First-principles electronic structure and the associated anomalous Hall conductivity were computed in order to interpret the experimental results. Our analysis shows that the AHE in TbPtBi does not originate from the Weyl points but that it is driven by the large net Berry curvature produced by the anticrossing of spin-split bands near the Fermi level in TbPtBi.

preprint2020arXiv

First-Principles Calculation of Spin and Orbital Contributions to Magnetically Ordered Moments in Sr$_{2}$IrO$_{4}$

We show how an accurate first-principles treatment of the canted-antiferromagnetic ground state of Sr$_2$IrO$_4$, a prototypical $5d$ correlated spin-orbit coupled material, can be obtained without invoking any free parameters such as the Hubbard U or tuning the spin-orbit coupling strength. Our theoretically predicted iridium magnetic moment of 0.250 $μ_B$, canted by 12.6$^{\circ}$ off the a-axis, is in accord with experimental results. By resolving the magnetic moments into their spin and orbital components, we show that our theoretically obtained variation of the magnetic scattering amplitude $<M_{m}>$ as a function of the polarization angle is consistent with recent non-resonant magnetic x-ray scattering measurements. The computed value of the band gap (55 meV) is also in line with the corresponding experimental values. A comparison of the band structure to that of the cuprates suggests the presence of incommensurate charge-density wave phases in Sr$_{2}$IrO$_{4}$.

preprint2020arXiv

K$_2$CoS$_2$: A new two-dimensional in-plane antiferromagnetic insulator

The recent discovery of two-dimensional (2D) magnetic materials has brought magnetism to the flatland. This has opened up exciting opportunities for the exploration of fundamental physics as well as for novel device applications. Here, we predict a new thermodynamically stable 2D magnetic material, K$_2$CoS$_2$, which retains its in-plane anti-ferromagnetic order down to the monolayer and bilayer limits. We find that the magnetic moments ($2.5 μ_B/$Co) are aligned along the intra-Co chains, from monolayer to bulk. The non-magnetic electronic spectrum of both the monolayer and bilayer films is found to host flat bands and van-Hove singularities, which in instrumental in giving rise to the the magnetic ground state. Based on classical Monte-Carlo simulations, we estimate the Neel temperature for the antiferromagnetic monolayer to be $\approx 15$K. Our study thus establishes that K$_2$CoS$_2$ hosts a robust antiferromagnetic state which persists from the monolayer limit to the bulk material.

preprint2020arXiv

Magnetotransport properties of the topological nodal-line semimetal CaCdSn

Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material, CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the $Γ$ point in the absence of spin-orbit coupling (SOC) effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility ($μ\approx 3.44\times 10^4$ cm$^2$V$^{-1}$s$^{-1}$) and displays a field-induced metal-semiconductor like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear non-saturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures ($\approx 7.44\times 10^3 \%$ and $\approx 1.71\times 10^3\%$, respectively, at 4K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.

preprint2020arXiv

Observation of gapped state in rare-earth monopnictide HoSb

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the G and X-symmetry points of the Brillouin zone (BZ), we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

preprint2020arXiv

Saddle-point von Hove singularity and dual topological insulator state in Pt$_2$HgSe$_3$

Saddle-point van Hove singularities in the topological surface states are interesting because they can provide a new pathway for accessing exotic correlated phenomena in topological materials. Here, based on first-principles calculations combined with a $\mathbf {k \cdot p}$ model Hamiltonian analysis, we show that the layered platinum mineral jacutingaite (Pt$_2$HgSe$_3$) harbours saddle-like topological surface states with associated van Hove singularities. Pt$_2$HgSe$_3$ is shown to host two distinct types of nodal lines without spin-orbit coupling (SOC) which are protected by combined inversion ($I$) and time-reversal ($T$) symmetries. Switching on the SOC gaps out the nodal lines and drives the system into a topological insulator state with nonzero weak topological invariant $Z_2=(0;001)$ and mirror Chern number $n_M=2$. Surface states on the naturally cleaved (001) surface are found to be nontrivial with a unique saddle-like energy dispersion with type II van Hove singularities. We also discuss how modulating the crystal structure can drive Pt$_2$HgSe$_3$ into a Dirac semimetal state with a pair of Dirac points. Our results indicate that Pt$_2$HgSe$_3$ is an ideal candidate material for exploring the properties of topological insulators with saddle-like surface states.

preprint2020arXiv

Superconducting and Antiferromagnetic Properties of Dual-Phase V$_3$Ga

The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting behavior below 14 K. These results indicate the possibility of using V$_3$Ga for quantum technology devices utilizing both superconductivity and antiferromagnetism at the same temperature.

preprint2020arXiv

Topological Dirac Semimetal Phase in Bismuth Based Anode Materials for Sodium-Ion Batteries

Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na$_3$Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure. Density-functional-theory based first-principles calculations are playing a key role in understanding the fascinating electronic structure of Na$_3$Bi and other topological materials. In particular, the strongly-constrained-and-appropriately-normed (SCAN) meta-generalized-gradient-approximation (meta-GGA) has shown significant improvement over the widely used generalized-gradient-approximation (GGA) scheme in capturing energetic, structural, and electronic properties of many classes of materials. Here, we discuss the electronic structure of Na$_3$Bi within the SCAN framework and show that the resulting Fermi velocities and {\it s}-band shift around the $Γ$ point are in better agreement with experiments than the corresponding GGA predictions. SCAN yields a purely spin-orbit-coupling (SOC) driven Dirac semimetal state in Na$_3$Bi in contrast with the earlier GGA results. Our analysis reveals the presence of a topological phase transition from the Dirac semimetal to a trivial band insulator phase in Na$_{3}$Bi$_{x}$Sb$_{1-x}$ alloys as the strength of the SOC varies with Sb content, and gives insight into the role of the SOC in modulating conduction properties of Na$_3$Bi.

preprint2020arXiv

Two-dimensional MX family of Dirac materials with tunable electronic and topological properties

We propose a novel class of two-dimensional (2D) Dirac materials in the MX family (M=Be, Mg, Zn and Cd, X = Cl, Br and I), which exhibit graphene-like band structures with linearly-dispersing Dirac-cone states over large energy scales (0.8~1.8 eV) and ultra-high Fermi velocities comparable to graphene. The electronic and topological properties are found to be highly tunable and amenable to effective modulation via anion-layer substitution and vertical electric field. The electronic structures of several members of the family are shown to host a Van-Hove singularity (VHS) close to the energy of the Dirac node. The enhanced density-of-states associated with these VHSs could provide a mechanism for inducing topological superconductivity. The presence of sizable band gaps, ultra-high carrier mobilities, and small effective masses makes the MX family promising for electronics and spintronics applications.

preprint2019arXiv

Transition from Intrinsic to Extrinsic Anomalous Hall Effect in the Ferromagnetic Weyl Semimetal PrAlGe$_{1-x}$Si$_x$

Recent reports of a large anomalous Hall effect (AHE) in ferromagnetic Weyl semimetals (FM WSM) have led to a resurgence of interest in this enigmatic phenomenon. However, due to a lack of tunable materials, the interplay between the intrinsic mechanism caused by Berry curvature and extrinsic mechanisms due to scattering remains unclear in FM WSMs. In this contribution, we present a thorough investigation of both the extrinsic and intrinsic AHE in a new family of FM WSMs, PrAlGe$_{1-x}$Si$_x$, where $x$ can be tuned continuously. From DFT calculations, we show that the two end members, PrAlGe and PrAlSi, have different Fermi surfaces but similar Weyl node structures. Experimentally, we observe moderate changes in the anomalous Hall coefficient ($R_S$) but significant changes in the ordinary Hall coefficient ($R_0$) in PrAlGe$_{1-x}$Si$_x$ as a function of $x$, confirming a change of Fermi surface. By comparing the magnitude of $R_0$ and $R_S$, we identify two regimes; $|R_0|<|R_S|$ when $x\le0.5$ and $|R_0|>|R_S|$ when $x>0.5$. Through a detailed scaling analysis, we discover a universal anomalous Hall conductivity (AHC) from intrinsic contribution when $x\le0.5$. Such universal AHC is absent when $x>0.5$. Thus, we point out the significance of the extrinsic mechanisms in FM WSMs and report the first observation of a transition from intrinsic to extrinsic AHE in PrAlGe$_{1-x}$Si$_x$.

preprint2018arXiv

Observation of topological nodal-loop state in RAs3 (R = Ca, Sr)

Topological nodal-line semimetals (NLSs) are unique materials, which harbor one-dimensional line nodes along with the so-called drumhead surface states arising from nearly dispersionless two dimensional surface bands. However, a direct observation of these drumhead surface states in the currently realized NLSs has remained elusive. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES) along with parallel first principles calculations, we examine the topological characteristics of SrAs3 and CaAs3. SrAs3 is found to show the presence of a topological nodal-loop, while CaAs3 is found to lie near a topologically trivial phase. Our analysis reveals that the surface projections of the bulk nodal-points in SrAs3 are connected by drumhead surface states. Notably, the topological states in SrAs3 and CaAs3 are well separated from other irrelevant bands in the vicinity of the Fermi level. These compounds thus provide a hydrogen-like simple platform for developing an in-depth understanding of the quantum phase transitions of NLSs.