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Ming Shi

Ming Shi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.supr-concond-mat.mtrl-sciArtificial IntelligenceComputer Visioncond-mat.mes-hall

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Published work

18 published item(s)

preprint2026arXiv

Common sublattice-pure van Hove singularities in the kagome superconductors $\textit{A}$V$_{3}$Sb$_{5}$ ($\textit{A}$ = K, Rb, Cs)

Kagome materials offer a versatile platform for exploring correlated and topological quantum states, where van Hove singularities (VHSs) play a pivotal role in driving electronic instabilities, exhibiting distinct behaviors depending on electron filling and interaction settings. In the recently discovered kagome superconductors $\textit{A}$V$_{3}$Sb$_{5}$ ($\textit{A}$ = K, Rb, Cs), unconventional charge density wave order, superconductivity, and electronic chirality emerge, yet the nature of VHSs near the Fermi level ($\textit{E}$$_{F}$) and their connection to these exotic orders remain elusive. Here, using high-resolution polarization-dependent angle-resolved photoemission spectroscopy, we uncover a universal electronic structure across $\textit{A}$V$_{3}$Sb$_{5}$ that is distinct from density-functional theory predictions that show noticeable discrepancies. We identify multiple common sublattice-pure VHSs near $\textit{E}$$_{F}$, arising from strong V-$\textit{d}$/Sb-$\textit{p}$ hybridization, which significantly promote bond-order fluctuations and likely drive the observed charge density wave order. These findings provide direct spectroscopic evidence for hybridization-driven VHS formation in kagome metals and establish a unified framework for understanding the intertwined electronic instabilities in $\textit{A}$V$_{3}$Sb$_{5}$.

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preprint2022arXiv

Invertible Mask Network for Face Privacy-Preserving

Face privacy-preserving is one of the hotspots that arises dramatic interests of research. However, the existing face privacy-preserving methods aim at causing the missing of semantic information of face and cannot preserve the reusability of original facial information. To achieve the naturalness of the processed face and the recoverability of the original protected face, this paper proposes face privacy-preserving method based on Invertible "Mask" Network (IMN). In IMN, we introduce a Mask-net to generate "Mask" face firstly. Then, put the "Mask" face onto the protected face and generate the masked face, in which the masked face is indistinguishable from "Mask" face. Finally, "Mask" face can be put off from the masked face and obtain the recovered face to the authorized users, in which the recovered face is visually indistinguishable from the protected face. The experimental results show that the proposed method can not only effectively protect the privacy of the protected face, but also almost perfectly recover the protected face from the masked face.

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preprint2022arXiv

Multiple mobile excitons manifested as sidebands in quasi-one-dimensional metallic TaSe3

Charge neutrality and their expected itinerant nature makes excitons potential transmitters of information. However, exciton mobility remains inaccessible to traditional optical experiments that only create and detect excitons with negligible momentum. Here, using angle-resolved photoemission spectroscopy, we detect dispersing excitons in the quasi-one-dimensional metallic trichalcogenide, TaSe3. The low density of conduction electrons and the low dimensionality in TaSe3 combined with a polaronic renormalization of the conduction band and the poorly screened interaction between these polarons and photo-induced valence holes leads to various excitonic bound states that we interpret as intrachain and interchain excitons, and possibly trions. The thresholds for the formation of a photo-hole together with an exciton appear as side valence bands with dispersions nearly parallel to the main valence band, but shifted to lower excitation energies. The energy separation between side and main valence bands can be controlled by surface doping, enabling the tuning of certain exciton properties.

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preprint2022arXiv

Reconstruction of low dimensional electronic states by altering the chemical arrangement at the SrTiO3 surface

Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface.

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preprint2022arXiv

Spin-triplet superconductivity in Weyl nodal-line semimetals

Topological semimetals are three dimensional materials with symmetry-protected massless bulk excitations. As a special case, Weyl nodal-line semimetals are realized in materials either having no inversion or broken time-reversal symmetry and feature bulk nodal lines. The 111-family of materials, LaNiSi, LaPtSi and LaPtGe (all lacking inversion symmetry), belong to this class. Here, by combining muon-spin rotation and relaxation with thermodynamic measurements, we find that these materials exhibit a fully-gapped superconducting ground state, while spontaneously breaking time-reversal symmetry at the superconducting transition. Since time-reversal symmetry is essential for protecting the normal-state topology, its breaking upon entering the superconducting state should remarkably result in a topological phase transition. By developing a minimal model for the normal-state band structure and assuming a purely spin-triplet pairing, we show that the superconducting properties across the family can be described accurately. Our results demonstrate that the 111-family reported here provides an ideal test-bed for investigating the rich interplay between the exotic properties of Weyl nodal-line fermions and unconventional superconductivity.

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preprint2021arXiv

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

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preprint2021arXiv

Surface state at $BaSnO_3$ evidenced by angle-resolved photoemission spectroscopy and ab initio calculations

Perovskite alkaline earth stannates, such as $BaSnO_3$ and $SrSnO_3$, showing light transparency and high electrical conductivity (when doped), have become promising candidates for novel optoelectrical devices. Such devices are mostly based on hetero-structures and understanding of their electronic structure, which usually deviates from the bulk, is mandatory for exploring a full application potential. Employing angle-resolved photoemission spectroscopy and ab initio calculations we reveal the existence of a 2-dimensional metallic state at the $SnO_2$-terminated surface of a 1\% La-doped $BaSnO_3$ thin film. The observed surface state is characterized by distinct carrier density and a smaller effective mass in comparison with the corresponding bulk values. The small surface effective mass of about $0.12m_e$ can cause an improvement of the electrical conductivity of BSO based heterostructures.

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preprint2020arXiv

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

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preprint2020arXiv

Spin-orbit-controlled metal-insulator transition in Sr$_2$IrO$_4$

In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled $j_{\mathrm{eff}} = 1/2$ doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, since previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. We overcome this challenge by employing multiple substituents that introduce well defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr$_2$Ir$_{1-x}$T$_x$O$_4$ (T = Ru, Rh) by angle-resolved photoemission spectroscopy (ARPES), combined with ab-initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr$_2$IrO$_4$. Most importantly, we estimate the critical value for spin-orbit coupling in this system to be $λ_c = 0.42 \pm 0.01$ eV, and provide the first demonstration of a spin-orbit-controlled MIT.

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preprint2016arXiv

Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

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preprint2016arXiv

NaFe$_{0.56}$Cu$_{0.44}$As: A pnictide insulating phase induced by on-site Coulomb interaction

In the studies of iron-pnictides, a key question is whether their bad-metal state from which the superconductivity emerges lies in close proximity with a magnetically ordered insulating phase. Recently it was found that at low temperatures, the heavily Cu-doped NaFe$_{1-x}$Cu$_x$As ($x > 0.3$) iron-pnictide is an insulator with long-range antiferromagnetic order, similar to the parent compound of cuprates but distinct from all other iron-pnictides. Using angle-resolved photoemission spectroscopy, we determined the momentum-resolved electronic structure of NaFe$_{1-x}$Cu$_x$As ($x = 0.44$) and identified that its ground state is a narrow-gap insulator. Combining the experimental results with density functional theory (DFT) and DFT+U calculations, our analysis reveals that the on-site Coulombic (Hubbard) and Hund's coupling energies play crucial roles in formation of the band gap about the chemical potential. We propose that at finite temperatures charge carriers are thermally excited from the Cu-As-like valence band into the conduction band, which is of Fe $3d$-like character. With increasing temperature, the number of electrons in the conduction band becomes larger and the hopping energy between Fe sites increases, and finally the long-range antiferromagnetic order is destroyed at $T > T_\mathrm{N}$. Our study provides a basis for investigating the evolution of the electronic structure of a Mott insulator transforming into a bad metallic phase, and eventually forming a superconducting state in iron-pnictidesa superconducting state in iron-pnictides.

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preprint2015arXiv

Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

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preprint2015arXiv

Micro-metric electronic patterning of a topological band structure using a photon beam

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system.

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preprint2014arXiv

Correlation-induced self-doping in intercalated iron-pnictide superconductor Ba2Ti2Fe2As4O

The electronic structure of the intercalated iron-based superconductor Ba2Ti2Fe2As4O (Tc - 21.5 K) has been investigated by using angle-resolved photoemission spectroscopy and combined local density approximation and dynamical mean field theory calculations. The electronic states near the Fermi level are dominated by both the Fe 3d and Ti 3d orbitals, indicating that the spacing layers separating different FeAs layers are also metallic. By counting the enclosed volumes of the Fermi surface sheets, we observe a large self-doping effect, i.e. 0.25 electrons per unit cell are transferred from the FeAs layer to the Ti2As2O layer, leaving the FeAs layer in a hole-doped state. This exotic behavior is successfully reproduced by our dynamical mean field calculations, in which the self-doping effect is attributed to the electronic correlations in the Fe 3d shell. Our work provides an alternative route of effective doping without element substitution for iron-based superconductors.

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preprint2014arXiv

Linking Dynamic and Thermodynamic Properties of Cuprates; an ARPES study of (CaLa)(BaLa)$_{2}$Cu$_{3}$O$_{y}$

We report angle-resolved photoemission spectroscopy (ARPES) on two families of high temperature superconductors (Ca$_{x}$La$_{1-x}$)(Ba$_{1.75-x}$ La $% _{0.25+x}$)Cu$_{3}$O$_{y}$ with $x=0.1$ ($T_{c}^{max}=56$ K) and $x=0.4$ ($% T_{c}^{max}=82$ K). The Fermi surface (FS) is found to be independent of $x$ or $y$, and its size indicates extreme sample-surface overdoping. This universal FS allowes the comparison of dynamical properties between superconductors of similar structure and identical doping, but different $% T_{c}^{max}$. We find that the high-energy ($\left\vert E\right\vert >50$% meV) nodal velocity in the $x=0.4$ family is higher than in the $x=0.1$ family. The implied correlation between $T_{c}^{max}$ and the hopping rate $% t $ supports the notion of kinetic energy driven superconductivity in the cuprates. We also find that the antinodal gap is higher for the $x=0.4$ family.

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preprint2014arXiv

Spin-charge interplay in antiferromagnetic La$_{2-x}$Sr$_{x}$CuO$_{4}$ studied by the muons, neutrons, and ARPES techniques

Exploring whether a spin density wave (SDW) is responsible for the charge excitations gap in the high-temperature superconducting cuprates is difficult, since the region of the phase diagram where the magnetic properties are clearly exposed is different from the region where the band dispersion is visible. On the one hand, long range magnetic order disappears as doping approaches 2% from below, hindering our ability to perform elastic neutron scattering (ENS). On the other hand, cuprates become insulating at low temperature when the doping approaches 2% from above, thus restricting angle-resolved photoemission spectroscopy (ARPES). In fact, ARPES data for samples with doping lower than 3% are rare and missing the quasiparticle peaks in the energy distribution curves (EDCs). The main problem is the high resistivity of extremely underdoped samples, which is detrimental to ARPES due to charging effects. Nevertheless, the resistivity of La$_{2-x}$Sr$_{x}$CuO$_{4}$ as a function of temperature, at 2% doping, has a broad minimum around 100K. This minimum opens a window for both experiments. By preparing a series of LSCO single crystals with $\sim $0.2-0.3% doping steps around 2%, we managed to find one to which both techniques apply. This allows us to explore the cross talk between the magnetic and electronic properties of the material.

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preprint2012arXiv

Three-Dimensional Fermiology by Soft-X-Ray ARPES: Origin of Charge Density Waves in VSe2

Electronic structure of crystalline materials is their fundamental characteristic which is the basis of almost all their physical and chemical properties. Angle-resolved photoemission spectroscopy (ARPES) is the main experimental tool to study all electronic structure aspects with resolution in k-space. However, its application to three-dimensional (3D) materials suffers from a fundamental problem of ill-defined surface-perpendicular wavevector kz. Here, we achieve sharp definition of kz to enable precise navigation in 3D k space by pushing ARPES into the soft-X-ray photon energy range. Essential to break through the notorious problem of small photoexcitation cross-section was an advanced photon flux performance of our instrumentation. We explore the electronic structure of a transition metal dichalcogenide VSe2 which develops charge density waves (CDWs) possessing exotic 3D character. We experimentally identify nesting of its 3D Fermi surface (FS) as the precursor for these CDWs. Our study demonstrates an immense potential of soft-X-ray ARPES (SX-ARPES) to resolve various aspects of 3D electronic structure.

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preprint2010arXiv

Existence, character and origin of surface-related bands in the high temperature iron pnictide superconductor BaFe_{2-x}Co_{x}As_{2}

Low energy electron diffraction (LEED) experiments, LEED simulations and finite slab density functional calculations are combined to study the cleavage surface of Co doped BaFe_{2-x}Co_{x}As_{2} (x = 0.1, 0.17). We demonstrate that the energy dependence of the LEED data can only be understood from a terminating 1/2 Ba layer accompanied by distortions of the underlying As-Fe_2-As block. As a result, surface related Fe 3d states are present in the electronic structure, which we identify in angle resolved photoemission experiments. The close proximity of the surface-related states to the bulk bands inevitably leads to broadening of the ARPES signals, which excludes the use of the BaFe_{2-x}Co_{x}As_{2} system for accurate determination of self-energies using ARPES.

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