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Nicholas C. Plumb

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Published work

9 published item(s)

preprint2026arXiv

Common sublattice-pure van Hove singularities in the kagome superconductors $\textit{A}$V$_{3}$Sb$_{5}$ ($\textit{A}$ = K, Rb, Cs)

Kagome materials offer a versatile platform for exploring correlated and topological quantum states, where van Hove singularities (VHSs) play a pivotal role in driving electronic instabilities, exhibiting distinct behaviors depending on electron filling and interaction settings. In the recently discovered kagome superconductors $\textit{A}$V$_{3}$Sb$_{5}$ ($\textit{A}$ = K, Rb, Cs), unconventional charge density wave order, superconductivity, and electronic chirality emerge, yet the nature of VHSs near the Fermi level ($\textit{E}$$_{F}$) and their connection to these exotic orders remain elusive. Here, using high-resolution polarization-dependent angle-resolved photoemission spectroscopy, we uncover a universal electronic structure across $\textit{A}$V$_{3}$Sb$_{5}$ that is distinct from density-functional theory predictions that show noticeable discrepancies. We identify multiple common sublattice-pure VHSs near $\textit{E}$$_{F}$, arising from strong V-$\textit{d}$/Sb-$\textit{p}$ hybridization, which significantly promote bond-order fluctuations and likely drive the observed charge density wave order. These findings provide direct spectroscopic evidence for hybridization-driven VHS formation in kagome metals and establish a unified framework for understanding the intertwined electronic instabilities in $\textit{A}$V$_{3}$Sb$_{5}$.

preprint2022arXiv

Reconstruction of low dimensional electronic states by altering the chemical arrangement at the SrTiO3 surface

Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface.

preprint2021arXiv

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

preprint2021arXiv

Surface state at $BaSnO_3$ evidenced by angle-resolved photoemission spectroscopy and ab initio calculations

Perovskite alkaline earth stannates, such as $BaSnO_3$ and $SrSnO_3$, showing light transparency and high electrical conductivity (when doped), have become promising candidates for novel optoelectrical devices. Such devices are mostly based on hetero-structures and understanding of their electronic structure, which usually deviates from the bulk, is mandatory for exploring a full application potential. Employing angle-resolved photoemission spectroscopy and ab initio calculations we reveal the existence of a 2-dimensional metallic state at the $SnO_2$-terminated surface of a 1\% La-doped $BaSnO_3$ thin film. The observed surface state is characterized by distinct carrier density and a smaller effective mass in comparison with the corresponding bulk values. The small surface effective mass of about $0.12m_e$ can cause an improvement of the electrical conductivity of BSO based heterostructures.

preprint2020arXiv

Single spin-polarised Fermi surface in SrTiO$_3$ thin films

The 2D electron gas (2DEG) formed at the surface of SrTiO$_3$(001) has attracted great interest because of its fascinating physical properties and potential as a novel electronic platform, but up to now has eluded a comprehensible way to tune its properties. Using angle-resolved photoemission spectroscopy with and without spin detection we here show that the band filling can be controlled by growing thin SrTiO$_3$ films on Nb doped SrTiO$_3$(001) substrates. This results in a single spin-polarised 2D Fermi surface, which bears potential as platform for Majorana physics. Based on our results it can furthermore be concluded that the 2DEG does not extend more than 2 unit cells into the film and that its properties depend on the amount of SrO$_x$ at the surface and possibly the dielectric response of the system.

preprint2016arXiv

Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

preprint2015arXiv

Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

preprint2015arXiv

Micro-metric electronic patterning of a topological band structure using a photon beam

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system.

preprint2014arXiv

Hallmarks of the Mott-Metal Crossover in the Hole Doped J=1/2 Mott insulator Sr2IrO4

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. We investigate the evolution of electronic structure and dynamics of the hole-doped J=1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple exotic features previously observed in doped cuprates - pseudogaps, Fermi "arcs", and marginal-Fermi-liquid-like electronic scattering rates, despite different mechanisms that forbid electron double-occupancy. We argue these universal features of the Mott-metal crossover are not related to preformed electron pairing, quantum criticality or density-wave formation as most commonly discussed. Instead, short-range antiferromagnetic correlations may play an indispensible role.