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Amit Kanigel

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Published work

9 published item(s)

preprint2022arXiv

Magnetic memory and spontaneous vortices in a van der Waals superconductor

Doped Mott insulators exhibit some of the most intriguing quantum phases of matter, including quantum spin-liquids, unconventional superconductors, and non-Fermi liquid metals. Such phases often arise when itinerant electrons are close to a Mott insulating state, and thus experience strong spatial correlations. Proximity between different layers of van der Waals heterostructures naturally realizes a platform for experimentally studying the relationship between localized, correlated electrons and itinerant electrons. Here, we explore this relationship by studying the magnetic landscape of 4Hb-TaS2, which realizes an alternate stack of a candidate spin liquid and a superconductor. We report on a spontaneous vortex phase whose vortex density can be trained in the normal state. We show that time reversal symmetry is broken above Tc, indicating the presence of a magnetic phase independent of the superconductor. Strikingly, this phase does not generate detectable magnetic signals. We use scanning superconducting quantum interference device (SQUID) microscopy to show that it is incompatible with ferromagnetic ordering. The discovery of this new form of hidden magnetism illustrates how combining superconductivity with a strongly correlated system can lead to new, unexpected physics.

preprint2019arXiv

Band inversion and topology of the bulk electronic structure in FeSe${}_{0.45}$Te${}_{0.55}$

FeSe${}_{0.45}$Te${}_{0.55}$ (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly renormalize the bands compared to electronic structure calculations, and there is no evidence for the expected bulk band inversion. We present here a comprehensive angle resolved photoemission (ARPES) study of FeSeTe as function of photon energies ranging from 15 - 100 eV. We find that although the top of bulk valence band shows essentially no $k_z$ dispersion, its normalized intensity exhibits a periodic variation with $k_z$. We show, using ARPES selection rules, that the intensity oscillation is a signature of band inversion indicating a change in the parity going from $Γ$ to Z. Thus we provide the first direct evidence for a topologically non-trivial bulk band structure that supports protected surface states.

preprint2016arXiv

Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

preprint2015arXiv

Spin-Polarized Quantum Well States on Bi$_{2-x}$Fe$_x$Se$_3$

Low temperature scanning tunneling microscopy is used to image the doped topological insulator Bi$_{2-x}$Fe$_x$Se$_3$. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty state band structure. Quantitative comparison between measured data and density functional theory calculations reveals the unexpected coexistence of quantum well states (QWS) with topological surface states (TSS) on the atomically clean surface of Bi$_{2-x}$Fe$_x$Se$_3$. Spectroscopic measurements quantify the breakdown of linear dispersion due to hexagonal warping. Nonetheless, both QWS and TSS remain spin-polarized and protected from backscattering to almost 1 eV above the Dirac point, suggesting their utility for spin-based applications.

preprint2014arXiv

Doping dependence of the critical current in Bi2Sr2CaCu2Oy

The doping dependence of the critical current density, $J_{c}$, was measured in a series of high quality c-axis oriented ${\rm Bi_2Sr_2CaCu_2O_{8+δ}}$ thin films. For each doping level we measured the temperature dependence of $J_{c}$. We find that all samples have the same temperature dependence, but the critical current at zero temperature, $J_{c}(0)$, has a non-trivial doping dependence with a maximum at a unique doping level in the overdoped side of the superconducting dome.

preprint2014arXiv

Linking Dynamic and Thermodynamic Properties of Cuprates; an ARPES study of (CaLa)(BaLa)$_{2}$Cu$_{3}$O$_{y}$

We report angle-resolved photoemission spectroscopy (ARPES) on two families of high temperature superconductors (Ca$_{x}$La$_{1-x}$)(Ba$_{1.75-x}$ La $% _{0.25+x}$)Cu$_{3}$O$_{y}$ with $x=0.1$ ($T_{c}^{max}=56$ K) and $x=0.4$ ($% T_{c}^{max}=82$ K). The Fermi surface (FS) is found to be independent of $x$ or $y$, and its size indicates extreme sample-surface overdoping. This universal FS allowes the comparison of dynamical properties between superconductors of similar structure and identical doping, but different $% T_{c}^{max}$. We find that the high-energy ($\left\vert E\right\vert >50$% meV) nodal velocity in the $x=0.4$ family is higher than in the $x=0.1$ family. The implied correlation between $T_{c}^{max}$ and the hopping rate $% t $ supports the notion of kinetic energy driven superconductivity in the cuprates. We also find that the antinodal gap is higher for the $x=0.4$ family.

preprint2014arXiv

Spin-charge interplay in antiferromagnetic La$_{2-x}$Sr$_{x}$CuO$_{4}$ studied by the muons, neutrons, and ARPES techniques

Exploring whether a spin density wave (SDW) is responsible for the charge excitations gap in the high-temperature superconducting cuprates is difficult, since the region of the phase diagram where the magnetic properties are clearly exposed is different from the region where the band dispersion is visible. On the one hand, long range magnetic order disappears as doping approaches 2% from below, hindering our ability to perform elastic neutron scattering (ENS). On the other hand, cuprates become insulating at low temperature when the doping approaches 2% from above, thus restricting angle-resolved photoemission spectroscopy (ARPES). In fact, ARPES data for samples with doping lower than 3% are rare and missing the quasiparticle peaks in the energy distribution curves (EDCs). The main problem is the high resistivity of extremely underdoped samples, which is detrimental to ARPES due to charging effects. Nevertheless, the resistivity of La$_{2-x}$Sr$_{x}$CuO$_{4}$ as a function of temperature, at 2% doping, has a broad minimum around 100K. This minimum opens a window for both experiments. By preparing a series of LSCO single crystals with $\sim $0.2-0.3% doping steps around 2%, we managed to find one to which both techniques apply. This allows us to explore the cross talk between the magnetic and electronic properties of the material.

preprint2010arXiv

Possible evidence for two-gap superconductivity in TiSe_2Cu_x

We report a comprehensive TF-muSR study of TiSe_2Cu_2. The magnetic penetration depth was found to saturate at low temperature as expected in an s-wave SC. As x is increased we find that the superfluid density increases and the size of the superconducting gap, calculated from the temperature dependence of the superfluid density, is approaching the BCS value. However, for low values of x, the gap is smaller than the weak-coupling BCS prediction suggesting that two superconducting gaps are present in the sample.

preprint2001arXiv

Influence of Point Defects on the Shear Elastic Coefficients and on the Melting Temperature of Copper

We present molecular dynamics simulations of the influence of point defects on the shear elastic coefficients of copper. We find that vacancies do not influence these coefficients at all, while the introduction of interstitials causes a large reduction in the elastic coefficients. The simulations establish a phase diagram of the melting temperature as a function of the density of interstitials. A crystal having no free surface undergoes bulk mechanical melting as a result of the vanishing of C'=(C/sub/11-C/sub/12)/2 once the specific volume reaches a critical value, equal to the experimental volume of liquid phase. This critical volume is history independent, in the sense that it can be reached either by heating the crystal or by adding defects at a constant temperature. These results generalize the Born model of melting for the case where point defects are present.